Abstract:
A lens assembly for use with an electron beam optical system operating in a vacuum. The lens assembly includes a housing forming a sealed enclosure and at least one lens disposed within the housing. The housing includes a port for connection to a vacuum source for creating a vacuum in the sealed enclosure. A method of creating a vacuum within the lens assembly is also disclosed.
Abstract:
Apparatus and methods are disclosed for increasing the throughput of a charged-particle-beam exposure apparatus while maintaining alignment and exposure accuracy. The apparatus comprises a main chamber where exposure of sensitive substrates is performed using a charged-particle beam. At least one transport system moves and prepares the sensitive substrates for exposure in the main chamber. The transport system comprises at least one chamber. An evacuation device and a venting device are used to vary the pressure in the chambers as required. At least one switching valve is situated between the main chamber and a chamber in the transport system to isolate these chambers from one another. A flexible conduit connects the main chamber to the transport system. The apparatus and methods have especial utility for the processing of sub-micron level semiconductors.
Abstract:
An aperture (5) connects a first chamber (1) with a second chamber (2), and is surrounded by an annular nozzle (7) formed by inner and outer walls (6, 8), which connects the first chamber (1) with a third chamber (3). A supersonic annular gas jet (9) is ejected by the annular nozzle (7) into the first chamber (1), creating a Venturi pumping action at the core of the jet in the vicinity of the aperture (5). The second chamber (2) may thus be maintained at a substantially lower pressure than the first chamber (1). Inner wall (6) and outer wall (8) may be relatively movable for varying gas flow, and the first chamber (1) may include baffles or skimmers to modify gas flow, e.g., to create a high density molecular beam. An electron or ion beam (4) may be transferred from the second chamber (2) to the first chamber (1), e.g., as part of an environmental scanning electron microscope.
Abstract:
A system and method for conductively and/or convectively transferring heat away from a workpiece that has been processed by a processing system, such as an ion implantation system. The conductive transfer of heat from the workpiece is effectuated by disposing the workpiece in relatively close proximity with a floor of a load lock, which is maintained at a relatively cool temperature. The chamber pressure is disposed at a selected pressure by a pressure regulator and a vacuum pressure is applied to the backside of the workpiece closest to draw the workpiece into contact with the chamber floor, thereby effecting heat transfer from the workpiece to the cooling surface.
Abstract:
The disclosure relates to a vacuum seal that can be used in a plasma etch reactor to seal the chamber interior (10) from the outside environment consists of a protective collar (66) that is injection molded or machined of a high strength, high temperature and corrosion resistant thermoplastic material. The collar has an elastomeric gasket (68) installed therein and is used in combination with a second elastomeric gasket (76) to achieve a fluid-tight seal between two rigid surfaces (74,72) made of silicon and quartz, respectively.
Abstract:
In a scanning electron microscope a retarding static field for an electron beam is produced between an objective lens (17) and a sample (18), by closing a switch (S2) for applying a superimposed voltage (6) to the sample (18), when the following three conditions are met: in the first condition, a switch (S1) for applying an acceleration voltage (5) is closed. In the second condition, both of a valve (G1) and a valve (G2) are opened which are provided between a cathode (1) and the sample (18). In the third condition, when the sample (18) is mounted on a sample stage (19) by a sample replacing mechanism (77), a valve (G3) through which the sample passes is closed. The sample stage (19) is electrically connected via a discharge resistor (R) to a sample holder (21), and when the switch (S2) is opened, electric charges accumulated on the sample (18) are discharged through the sample holder (21) and the sample stage (19). As a result, when the sample (18) is mounted onto or released from the sample stage, the application of voltage to the sample (18) is automatically interrupted.
Abstract:
An apparatus for plasma treatment, capable of plasma-treating works of resin material by irradiating the surfaces of the works with a microwave discharge plasma within a vacuum reaction chamber, comprises a plurality of long plasma-irradiating tubular pipes, each of which is provided along the length thereof with numerous small holes for injecting plasma, and at least one plasma-irradiating straight pipe disposed with its free end opening toward a section to which the plasma is hard to flow. At least one second plasma-irradiating pipe is located movably to an optional position within the reaction chamber. A method for surface plasma-treatment comprises dividing a microwave generated in a magnetron in a plurality of microwaves by a distributor, introducing the divided microwaves into a plurality of plasma generating mechanisms, respectively, and introducing plasmas generated in the respective plasma generating mechanisms into the reaction chamber through a plurality of plasma introducing ports, respectively, formed in the wall of the reaction chamber.