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    DISPLAY DEVICE
    1.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号：EP4425471A1

    公开(公告)日：2024-09-04

    申请号：EP24154340.4

    申请日：2024-01-29

    申请人： InnoLux Corporation

    发明人： WATSUDA, Hirofumi

    IPC分类号： G09G3/3233 ,  G09G3/20 ,  G09G3/32

    CPC分类号： G09G3/3233 ,  G09G2300/042620130101 ,  G09G2300/086120130101 ,  G09G3/32 ,  G09G3/2003

    摘要： A display device (200, 500) is provided. The display device (200, 500) includes a first pixel (P(1,1), P(2,1)), a first emission signal line (EL_B[1], EM_B[2]) and a second emission signal line (EL_A[1], EL_A[3]). The first pixel (P(1,1), P(2,1)) includes a blue sub-pixel (PB), a green sub-pixel (PG) and a red sub-pixel (PR). The blue sub-pixel (PB) includes a first emission control switch. The green sub-pixel (PG) includes a second emission control switch. The red sub-pixel (PR) includes a third emission control switch. The first emission signal line (EL_B[1], EM_B[2]) is electrically connected to the first emission control switch and the second emission control switch. The second emission signal line (EL_A[1], EL_A[3]) is electrically connected to the third emission control switch.

    SEMICONDUCTOR ELEMENT, ELECTRONIC DEVICE COMPRISING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR CHIP
    3.
    发明公开
    SEMICONDUCTOR ELEMENT, ELECTRONIC DEVICE COMPRISING SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR CHIP 审中-公开

    公开(公告)号：EP4398316A1

    公开(公告)日：2024-07-10

    申请号：EP23216357.6

    申请日：2023-12-13

    申请人： InnoLux Corporation

    发明人： HUANG, Wei-Ta ,  LEE, Tzu-Yi ,  KUO, Hao-Chung ,  HUANG, Chun-Hui ,  HSIEH, Tsau-Hua

    IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/10

    CPC分类号： H01L33/06 ,  H01L33/105 ,  H01L33/0062

    摘要： A semiconductor element (100, 100A, 100B, 100C, 100D) includes a quantum well structure (130). The quantum well structure (130) of the semiconductor element (100, 100A, 100B, 100C, 100D) is disposed between a first type semiconductor layer (110) and a second type semiconductor layer (120), and includes a pair of barrier layers (139) and a first active layer (131) and a second active layer (132) disposed between the pair of barrier layers (139). The first active layer (131) and the second active layer (132) respectively include a group 13 elements of different concentrations. The first reflection unit (140) is disposed under the first type semiconductor layer (110). The second reflection (150) unit is disposed on the second type semiconductor layer (120), and defines a resonant cavity (102) with the first reflection unit (140). The quantum well structure (130) is arranged in the resonant cavity (102).

    LIGHT EMITTING DEVICE
    7.
    发明公开
    LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：EP4375736A1

    公开(公告)日：2024-05-29

    申请号：EP23207915.2

    申请日：2023-11-06

    申请人： InnoLux Corporation

    发明人： HUANG, Yu-Chia ,  HSIEH, Hong-Sheng ,  TSAI, Tsung-Han

    IPC分类号： G02F1/13

    CPC分类号： G02F1/1323 ,  H01L27/156

    摘要： A light emitting device (LD) emitting an output light (OL) includes a light adjustment structure (LS1,LS2,LS3,LS4,LS5,LS6,LS7). A sub light (SL1,SL2) is defined as the output light (OL) corresponding to an azimuth angle (ϕ1, ϕ2), a first value L1 is a sum of a luminance of the sub light (SL1,SL2) corresponding to a polar angle (θ1,θ2) from 115 to 125 degrees, a second value L2 is a sum of a luminance of the sub light (SL1,SL2) corresponding to a polar angle (θ1,θ2) from 95 to 105 degrees, a third value L3 is a sum of a luminance of the sub light (SL1,SL2) corresponding to a polar angle (θ1,θ2) from 75 to 85 degrees, a fourth value L4 is a sum of a luminance of the sub light (SL1,SL2) corresponding to a polar angle (θ1,θ2) from 55 to 65 degrees, wherein L3