摘要:
Systems and methods are provided for perform device selection in multi-chip package NAND flash memory systems. In some embodiments, the memory controller performs device selection by command. In other embodiments, the memory controller performs device selection by input address.
摘要:
A mass storage memory module system including a memory module having memory holding members which can be connected to each other, and removably connected to a memory controller. One or more modular memory holding members can be connected to each other to expand the overall storage capacity of the memory module. The presently described expandable memory module does not have a storage capacity limit. A memory holding member includes a plate, a plane, a board and another material having at least one memory device, or, on which at least one memory device is held or to which at least one memory device is mounted.
摘要:
A first memory device (201) and second memory device (202) have a same input/output layout configuration. To form a stack, the second memory device (202) is secured to the first memory device (201). To facilitate connectivity, the second memory device (202) is rotationally offset with respect to the first memory device (201) in the stack to align outputs (Q) of the first memory device(201) with corresponding inputs (D) of the second memory device (202). The rotational offset of the second memory device 202) with respect to the first memory device (201) aligns one or more outputs (Q) of the first memory device (201) with one or more respective inputs (D) of the second memory device (202). Based on links (311) between outputs (Q) and inputs (D) from one memory device to another in the stack, the stack of memory devices can include paths facilitating one or more series connection configurations through the memory devices.
摘要:
A solid state drive is disclosed. The solid state drive includes a circuit board having opposing first and second surfaces. A plurality of semiconductor chips are attached to the first surface of the circuit board of the solid state drive, and the plurality of semiconductor chips of the solid state drive include at least one memory chip that is at least substantially encapsulated in a resin. An in-line memory module-type form factor circuit board is also disclosed. The in-line memory module-type form factor circuit board has opposing first and second surfaces. A plurality of semiconductor chips are attached to the first surface of the in-line memory module-type form factor circuit board, and these semiconductor chips include at least one memory chip that is at least substantially encapsulated in a resin.
摘要:
A first memory device (201) and second memory device (202) have a same input/output layout configuration. To form a stack, the second memory device (202) is secured to the first memory device (201). To facilitate connectivity, the second memory device (202) is rotationally offset with respect to the first memory device (201) in the stack to align outputs (Q) of the first memory device(201) with corresponding inputs (D) of the second memory device (202). The rotational offset of the second memory device 202) with respect to the first memory device (201) aligns one or more outputs (Q) of the first memory device (201) with one or more respective inputs (D) of the second memory device (202). Based on links (311) between outputs (Q) and inputs (D) from one memory device to another in the stack, the stack of memory devices can include paths facilitating one or more series connection configurations through the memory devices.
摘要:
A method and system for extending the life span of a flash memory device. The flash memory device is dynamically configurable to store data in the single bit per cell (SBC) storage mode or the multiple bit per cell (MBC) mode, such that both SBC data and MBC data co-exist within the same memory array. One or more tag bits stored in each page of the memory is used to indicate the type of storage mode used for storing the data in the corresponding subdivision, where a subdivision can be a bank, block or page. A controller monitors the number of program-erase cycles corresponding to each page for selectively changing the storage mode in order to maximize lifespan of any subdivision of the multi-mode flash memory device.
摘要:
A method or apparatus operates a multitude of devices in a serial interconnection configuration to establish a device identifier (ID) for each device. An input signal is transmitted through a serial interconnection to a first device using inputs that are also used by the first device to input other information thereto (e.g., data, commands, control signals). A generating circuit generates a device ID in response to the input signal. A transfer circuit then transfers an output signal associated with the device ID to a second device through a serial output of the first device. The serial output is also used by the first device to output other information (e.g., signals, data) to another device in the serial interconnection configuration.
摘要:
A power supply testing architecture for embedded sub-systems is described, where each embedded sub-system can have at least one testable internal voltage supply. A plurality of embedded sub-systems are organized into groups, where each group of sub-systems shares a common voltage test line connected to the internal voltage supplies of the sub-systems. Accordingly, the collective internal voltages of each group can be tested in parallel. A power control signal can disable the internal voltage supply of all the sub-systems to allow application of an external power to the common voltage test lines. Alternately, the sub-systems in each group can be tested sequentially, such that each enabled sub-system of the group has dedicated access to its common voltage test line. In such a scheme, dedicated power control signals are used to independently disable each sub-system of the groups.
摘要:
A memory system having a serial data interface and a serial data path core for receiving data from and for providing data to at least one memory bank as a serial bitstream. The memory bank is divided into two halves, where each half is divided into upper and lower sectors. Each sector provides data in parallel to a shared two-dimensional page buffer with an integrated self column decoding circuit. A serial to parallel data converter within the memory bank couples the parallel data from either half to the serial data path core. The shared two-dimensional page buffer with the integrated self column decoding circuit minimizes circuit and chip area overhead for each bank, and the serial data path core reduces chip area typically used for routing wide data buses. Therefore a multiple memory bank system is implemented without a significant corresponding chip area increase when compared to a single memory bank system having the same density.