摘要:
The present invention provides single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2 x 10 19 cm -3 to 6 x 10 20 cm -3 .
摘要翻译:本发明提供单晶碳化硅和质量好的单晶碳化硅晶片,其位错,微管和其他晶体缺陷低,并且当应用于器件时可实现高产率和高性能,其中掺杂比 籽晶与生长晶体之间的界面的晶体生长方向的相反侧的元素浓度为5以下,晶种附近的生长晶体的掺杂元素浓度为2×10 19 cm -3 至6×10 20 cm -3。
摘要:
A precipitate is produced using a precipitant in a solution containing nickel and magnesium, the precipitate is dried and fired to produce an oxide of nickel and magnesium, the oxide is added to and mixed with alumina and water or with an alumina sol, and the mixture is least dried and fired to produce a tar reforming catalyst for reforming and gasifying pyrolysis tar of a carbonaceous raw material.
摘要:
When discretizing an analysis target part into plural elements and performing analysis, sheet thickness reduction rate or maximum principal strain at an equivalent position including a same element is compared by either a manner of combining two adjacent elements after the analysis or a manner of changing an element discretization size with two types and performing the analysis, and the element where the difference is large is extracted as a fracture risk portion. With this structure, a fracture risk portion can be extracted reliably when a fracture is predicted by a finite element method.