SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL WAFER
    1.
    发明公开
    SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL WAFER 有权
    碳化硅墨水晶体和碳化硅墨水晶体晶体

    公开(公告)号:EP2385158A4

    公开(公告)日:2012-12-05

    申请号:EP09820658

    申请日:2009-10-14

    申请人: NIPPON STEEL CORP

    IPC分类号: C30B29/36 C30B23/00

    摘要: The present invention provides single-crystal silicon carbide and a single-crystal silicon carbide wafer of good-quality that are low in dislocations, micropipes and other crystal defects and enable high yield and high performance when applied to a device, wherein the ratio of doping element concentrations on opposite sides in the direction of crystal growth of the interface between the seed crystal and the grown crystal is 5 or less and the doping element concentration of the grown crystal in the vicinity of the seed crystal is 2 x 10 19 cm -3 to 6 x 10 20 cm -3 .

    摘要翻译: 本发明提供单晶碳化硅和质量好的单晶碳化硅晶片,其位错,微管和其他晶体缺陷低,并且当应用于器件时可实现高产率和高性能,其中掺杂比 籽晶与生长晶体之间的界面的晶体生长方向的相反侧的元素浓度为5以下,晶种附近的生长晶体的掺杂元素浓度为2×10 19 cm -3 至6×10 20 cm -3。