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    METHOD AND APPARATUS FOR MEASURING THIN FILM SAMPLE, AND METHOD AND APPARATUS FOR MANUFACTURING THIN FILM SAMPLE
    3.
    发明公开
    METHOD AND APPARATUS FOR MEASURING THIN FILM SAMPLE, AND METHOD AND APPARATUS FOR MANUFACTURING THIN FILM SAMPLE 有权
    VERFAHREN UND VORRICHTUNG ZUM MESSEN VONDÜNNFILMPROBEN

    公开(公告)号：EP1843126A1

    公开(公告)日：2007-10-10

    申请号：EP05820171.6

    申请日：2005-12-22

    申请人： SII NanoTechnology Inc.

    发明人： IKKU, Yutaka, SII Nanotechnology Inc. ,  ASAHATA, Tatsuya, SII Nanotechnology Inc. ,  SUZUKI, Hidekazu, SII Nanotechnology Inc.

    IPC分类号： G01B15/02 ,  G01N23/20 ,  G01N23/225 ,  H01J37/28 ,  H01J37/30 ,  H01L21/66

    CPC分类号： G01B15/02 ,  G01N23/225 ,  H01J2237/2814

    摘要： In a method of measuring a thin film sample of irradiating an electron beam to a thin film sample, detecting a generated secondary electron and measuring a film thickness of the thin film sample by utilizing the secondary electron, it is provided that the film thickness is measured accurately, in a short period of time and easily even when a current amount of the irradiated electron beam is varied.
    An electron beam 2b is irradiated, and a generated secondary electron 4 is detected by a secondary electron detector 6. A calculated value constituted by an amount of a secondary electron detected at a film thickness measuring region and an amount of a secondary electron detected at a reference region is calculated by first calculating means 11. A film thickness of the film thickness measuring region can be calculated from a calibration data of a standard thin film sample and the calculated value calculated by a sample 5.

    摘要翻译： 在测量向薄膜样品照射电子束的薄膜样品的测量方法中，通过利用二次电子来检测所产生的二次电子和测量薄膜样品的膜厚度，其条件是测量膜厚度 准确地说，即使当照射的电子束的当前量变化时，也能够在短时间内容易地进行。 照射电子束2b，并且通过二次电子检测器6检测所产生的二次电子4.由在膜厚度测量区域检测到的二次电子量和在第二电子检测器检测到的二次电子量构成的计算值 通过第一计算装置11计算参考区域。可以从标准薄膜样品的校准数据和由样品5计算的计算值来计算膜厚度测量区域的膜厚度。

    ATOM PROBE EQUIPMENT AND PRELIMINARY PROCESSING METHOD FOR SAMPLE BY IT
    4.
    发明公开
    ATOM PROBE EQUIPMENT AND PRELIMINARY PROCESSING METHOD FOR SAMPLE BY IT 有权
    过程用于样品的用于原子探针装置的初步处理，并且将由此制备的样品和样品基片

    公开(公告)号：EP1731894A1

    公开(公告)日：2006-12-13

    申请号：EP05719810.3

    申请日：2005-03-02

    申请人： SII NanoTechnology Inc.

    发明人： KAITO, Takashi, c/o SII NANOTECHNOLOGY INC.

    IPC分类号： G01N1/32

    CPC分类号： G01N1/32 ,  B82Y35/00 ,  H01J2237/3109

    摘要： Problems to be solved by the present invention are to present a technique for preliminarily working a sample, which makes a place, that is desired to be analyzed, of a device into an acicular protrusion by locally cutting out the place, and to provide, even if the sample is a sample of a multilayer structure containing element layers whose evaporation electric fields are small in later-mentioned circumstances, a technique for making a stable ion evaporation in order possible, thereby making an SAP analysis at an atomic level possible.
    A preliminarily working of a sample for an atom probe apparatus of the invention comprises a step of cutting out a sample's desired observation site to a block-like form by using an FIB apparatus, a step of carrying and fixing the block-like cut-out sample onto a sample substrate, and a step of working the block-like sample fixed onto the sample substrate into a needle tip shape by an FIB etching. Further, the sample worked into the needle tip shape is formed such that a layer direction of a multilayer structure becomes parallel to a longitudinal direction of a needle.

    摘要翻译： 问题由本发明要解决的呈现技术用于预先加工的样品，这使得一个地方，并需要被分析，装置的成针状突起通过局部切割出的地方，并且提供，甚至 如果样品的多层结构包含元件层谁的蒸发电场是小后述的情况下的样品，制备，以便能够稳定的离子蒸发，从而在在原子水平上使可能SAP分析的技术。 预先工作对本发明的核装置试验样品包括通过使用在FIB装置，承载并固定块状的切口的工序切出的样品的期望的观察部位的块状形状的步骤 样品到样品基片，和工作用FIB的刻蚀固定到样品基片成针尖形状的块状样品的步骤。 此外，将样品加工成针尖形状形成搜索做了多层结构的层方向平行于针的纵向方向。

    METHOD AND APPARATUS FOR MEASURING THIN FILM SAMPLE, AND METHOD AND APPARATUS FOR MANUFACTURING THIN FILM SAMPLE
    6.
    发明公开
    METHOD AND APPARATUS FOR MEASURING THIN FILM SAMPLE, AND METHOD AND APPARATUS FOR MANUFACTURING THIN FILM SAMPLE 有权
    方法和设备测量薄膜样品和方法和装置薄膜样品生产

    公开(公告)号：EP1843126A4

    公开(公告)日：2009-04-01

    申请号：EP05820171

    申请日：2005-12-22

    申请人： SII NANOTECHNOLOGY INC

    发明人： IKKU YUTAKA ,  ASAHATA TATSUYA ,  SUZUKI HIDEKAZU

    IPC分类号： G01B15/02 ,  G01N23/20 ,  G01N23/225 ,  H01J37/28 ,  H01J37/30 ,  H01L21/66

    CPC分类号： G01B15/02 ,  G01N23/225 ,  H01J2237/2814

    摘要： In a thin film sample measuring method wherein a thin film sample is irradiated with an electron beam, a generated secondary electron is detected and a film thickness of the thin film sample is measured by using the secondary electron, the film thickness is accurately and easily measured in a short time even when a current quantity of the applied electronic beam is fluctuated. The electron beam (2b) is applied, and the generated secondary electron (4) is detected by a secondary electron detector (6). A calculation value configured with a secondary electron quantity detected in a film thickness measuring area and a secondary electron quantity detected in a reference area is calculated by a first calculating means (11). The film thickness of the film thickness measuring area can be calculated from the standard data of a reference thin film sample and the calculation value obtained from a sample (5).