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    MIXED GRANULARITY HIGHER-LEVEL REDUNDANCY FOR NON-VOLATILE MEMORY
    7.
    发明公开
    MIXED GRANULARITY HIGHER-LEVEL REDUNDANCY FOR NON-VOLATILE MEMORY 审中-公开
    MISCHGRANULARITÄT与主冗余非易失性存储器

    公开(公告)号：EP2880533A1

    公开(公告)日：2015-06-10

    申请号：EP13825514.6

    申请日：2013-07-23

    申请人： Seagate Technology LLC

    发明人： CHEN, Zhengang ,  WU, Yunxiang

    IPC分类号： G06F11/08 ,  G06F12/00

    CPC分类号： G06F11/1068 ,  G06F11/1048 ,  G06F11/108 ,  G11C29/52

    摘要： Mixed-granularity higher-level redundancy for NVM provides improved higher-level redundancy operation with better error recovery and/or reduced redundancy information overhead. For example, pages of the NVM that are less reliable, such as relatively more prone to errors, are operated in higher-level redundancy modes having relatively more error protection, at a cost of relatively more redundancy information. Concurrently, blocks of the NVM that are more reliable are operated in higher-level redundancy modes having relatively less error protection, at a cost of relatively less redundancy information. Compared to techniques that operate the entirety of the NVM in the higher-level redundancy modes having relatively less error protection, techniques described herein provide better error recovery. Compared to techniques that operate the entirety of the NVM in the higher-level redundancy modes having relatively more error protection, the techniques described herein provide reduced redundancy information overhead.

    Reader stop layers
    9.
    发明公开
    Reader stop layers 审中-公开
    Leserstoppschichten

    公开(公告)号：EP2581906A3

    公开(公告)日：2015-04-22

    申请号：EP12188430.8

    申请日：2012-10-12

    申请人： Seagate Technology LLC

    发明人： Van Dorn, Carolyn Pitcher ,  Boonstra, Thomas Roy

    IPC分类号： G11B5/31 ,  G11B5/11 ,  G11B5/39 ,  G11B5/40

    CPC分类号： G11B5/39 ,  G11B5/11 ,  G11B5/112 ,  G11B5/3169 ,  G11B5/3912 ,  G11B5/40 ,  Y10T428/1121 ,  Y10T428/1164

    摘要： Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.

    摘要翻译： 用于传感器头的制造读取器结构的公差继续增长，并且相应存储介质中的存储密度增加。 在读取器结构的制造期间可以利用读取器停止层来保护读取器结构的各个层免于衰退和/或划痕，同时处理读取器结构的其它未受保护的层。 例如，停止层在机械或化学机械抛光期间可能具有非常低的抛光速率。 可以显着地抛光周围区域，而由具有非常低的抛光速率的停止层保护的结构基本上不受影响。 然后可以通过蚀刻，例如在机械或化学机械抛光完成之后去除停止层。