公开(公告)号：EP3915133B1

公开(公告)日：2024-06-05

申请号：EP20702592.5

申请日：2020-01-23

IPC分类号： C30B23/02 ,  C30B25/18 ,  C30B29/16 ,  H01L21/74

CPC分类号： H01L21/743 ,  C30B29/16 ,  C30B25/183 ,  C30B23/025

公开(公告)号：EP4261323A1

公开(公告)日：2023-10-18

申请号：EP23161789.5

申请日：2023-03-14

申请人： IQE plc

发明人： Geen, Matthew ,  Pelzel, Rodney

IPC分类号： C23C16/30 ,  C30B25/02 ,  C30B29/40

摘要： A method 1300 of forming a layer 210 includes introducing a Group III precursor 112, 212, 512 in a reactor 100, 100', introducing a hydride Group V precursor 114, 214, 514 in the reactor, and introducing a metal-organic Group V precursor 116, 216, 516 in the reactor to form the layer 210. The method can further include mixing the hydride Group V precursor and the metal-organic Group V precursor 522. Advantageously, the layer and method of forming the layer utilize mixed Group V precursors, improve uniformity, decrease thermal sensitivity of the end material, normalize concentration profiles of precursors, improve yield, increase manufacturing efficiency, improve control of III-V ratios (e.g., pressure, growth rate, flux), and reduce manufacturing costs.

公开(公告)号：EP4374418A2

公开(公告)日：2024-05-29

申请号：EP22778075.6

申请日：2022-09-22

申请人： IQE plc

发明人： KAESS, Felix ,  KAO, Chen-Kai ,  LABOUTIN, Oleg

IPC分类号： H01L21/20

CPC分类号： H01L21/02458 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/02378 ,  H01L29/7783 ,  H01L29/2003

公开(公告)号：EP4220688A2

公开(公告)日：2023-08-02

申请号：EP23153665.7

申请日：2023-01-27

申请人： IQE plc

发明人： Hammond, Richard ,  Andrew, Clark ,  Pelzel, Rodney

IPC分类号： H01L21/306 ,  H01L29/51 ,  H01L29/06

摘要： A method of fabricating a layered structure comprising growing an epitaxial layer on a substrate with a first resistivity proximal to the substrate and a second resistivity (less than the first) distal therefrom. Porosify the epitaxial layer to form a porous layer with porosity >30% proximal to the substrate and ≤25% distal from the substrate. Epitaxially grow a semiconductor (channel) layer over the porous layer. Also a layered structure comprising: a substrate; a porous layer; and an epitaxial semiconductor (channel) layer. The porous layer has a first porosity >30% proximal to the substrate and a second porosity ≤25% adjacent to the semiconductor layer. The two different porosities can be optimised for different functions. The higher porosity is effective at insulating the channel from the substrate. The lower porosity provides a crystalline structure with single crystal orientation exposed that supports the channel layer comprising high quality, low defect, epitaxial growth.

公开(公告)号：EP4213319B1

公开(公告)日：2024-08-14

申请号：EP23152877.9

申请日：2019-01-18

IPC分类号： H01S5/183 ,  H01S5/40 ,  H01S5/42

CPC分类号： H01S5/18319 ,  H01S5/4087 ,  H01S5/18361 ,  H01S5/423

公开(公告)号：EP4220688A3

公开(公告)日：2023-08-09

申请号：EP23153665.7

申请日：2023-01-27

申请人： IQE plc

发明人： Hammond, Richard ,  Andrew, Clark ,  Pelzel, Rodney

IPC分类号： H01L21/306 ,  H01L29/51 ,  H01L29/06

摘要： A method of fabricating a layered structure comprising growing an epitaxial layer on a substrate with a first resistivity proximal to the substrate and a second resistivity (less than the first) distal therefrom. Porosify the epitaxial layer to form a porous layer with porosity >30% proximal to the substrate and ≤25% distal from the substrate. Epitaxially grow a semiconductor (channel) layer over the porous layer. Also a layered structure comprising: a substrate; a porous layer; and an epitaxial semiconductor (channel) layer. The porous layer has a first porosity >30% proximal to the substrate and a second porosity ≤25% adjacent to the semiconductor layer. The two different porosities can be optimised for different functions. The higher porosity is effective at insulating the channel from the substrate. The lower porosity provides a crystalline structure with single crystal orientation exposed that supports the channel layer comprising high quality, low defect, epitaxial growth.

公开(公告)号：EP4184730A1

公开(公告)日：2023-05-24

申请号：EP22201132.2

申请日：2022-10-12

申请人： IQE plc

发明人： GEEN, Matthew

IPC分类号： H01S5/183 ,  H01S5/026 ,  H01S5/34 ,  H01L31/0232 ,  H01L33/10 ,  H01L33/16

摘要： A layered structure 200, 300, 300', 400, 400', 600 includes a first layer 240, 320, 420, 620 being a single material and a cavity 230, 330, 430, 630 coupled to the first layer. The first layer includes a porous region 250, 250', 350, 350', 460, 650 to form a first distributed Bragg reflector (DBR). The porous region includes alternating first porous and second porous sublayers 251-258, 351-358, 351'-358', 461-468, 651-658 of the single material to form the first DBR. The cavity includes an active region 238, 338, 438, 638 to generate radiation, detect radiation, or both. Advantageously, the layered structure and method of forming the layered structure improves the speed of manufacturing DBRs, reduces strain in the layered structure, reduces the size of the layered structure, and increases throughput.

公开(公告)号：EP4174910A1

公开(公告)日：2023-05-03

申请号：EP22203749.1

申请日：2022-10-26

申请人： IQE plc

发明人： Johnson, Andrew David ,  Joel, Andrew Martin

IPC分类号： H01L21/02

摘要： A layered structure comprising a substrate having a first deformation. Also one or more device layers forming a device and having a second deformation. A deformation control layer which is pseudomorphic with respect to the substrate and having a third deformation. The deformation control layer is selected such that a sum of the first, second and third deformations matches a target level of deformation. Advantageously the layered structure has a controlled, known deformation which can be compressive, tensile or zero.