公开(公告)号：EP3178121A1

公开(公告)日：2017-06-14

申请号：EP15749866.8

申请日：2015-08-07

申请人： Oxford University Innovation Limited

发明人： SNAITH, Henry James ,  ZHANG, Wei ,  SALIBA, Michael

IPC分类号： H01L51/42 ,  H01L51/00

CPC分类号： H01G9/2009 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/001 ,  H01L51/0025 ,  H01L51/0026 ,  H01L51/0032 ,  H01L51/4226 ,  H01L51/4253 ,  Y02E10/549 ,  Y02P70/521

摘要： The present invention relates to a process for producing a layer of a crystalline material, which process comprises disposing on a substrate: a first precursor compound comprising a first cation and a sacrificial anion, which first cation is a metal or metalloid cation and which sacrificial anion comprises two or more atoms; and a second precursor compound comprising a second anion and a second cation, which second cation can together with the sacrificial anion form a first volatile compound. The invention also relates to a layer of a crystalline material obtainable by a process according to the invention. The invention also provides a process for producing a semiconductor device comprising a process for producing a layer of a crystalline material according to the invention. The invention also provides a composition comprising: (a) a solvent; (b) NH4X; (c) AX; and (d) BY2 or MY4; wherein X, A, M and Y are as defined herein.

摘要翻译： 本发明涉及一种制备结晶材料，该方法包括布置在基板的层：第一前体化合物，其包含一个第一阳离子和牺牲阴离子，其第一阳离子是金属或准金属阳离子和牺牲阴离子 包括两个或多个原子; 和第二前体化合物，其包含第二阴离子和一个第二阳离子，其中第二阳离子可与牺牲阴离子一起形成第一挥发性化合物。 因此本发明涉及通过一种方法gemäß本发明的结晶材料可获得的层。 因此，本发明提供了一种制造半导体器件的方法，包括用于产生结晶材料gemäß发明的层的方法。 因此本发明提供一种组合物，包含：（a）溶剂; （B）NH 4 X; （C）AX; 和（d）或BY2 MY4; worin X，A，M和Y中所定义。

公开(公告)号：EP3011610A1

公开(公告)日：2016-04-27

申请号：EP14732349.7

申请日：2014-06-17

申请人： Isis Innovation Ltd

发明人： SNAITH, Henry ,  BURLAKOV, Victor ,  BALL, James ,  EPERON, Giles ,  GORIELY, Alain

IPC分类号： H01L51/00 ,  H01L51/42

CPC分类号： H01L51/424 ,  H01L51/0002 ,  H01L51/0003 ,  H01L51/0032 ,  H01L51/0035 ,  H01L51/4226 ,  H01L51/441 ,  H01L51/447 ,  Y02B10/12 ,  Y02E10/549 ,  Y02P70/521

摘要： The invention relates to processes for producing semi-transparent photoactive layers, and devices comprising the same. The invention provides a process for producing a semi-transparent photoactive layer comprising: a) disposing on a substrate a composition, which composition comprises a photoactive material or one or more precursors of a photoactive material, to form a resulting layer; and b) dewetting the resulting layer to form a dewet layer of the photoactive material, wherein the dewet layer of the photoactive material is semi-transparent. The invention also provides a semi-transparent photoactive layer comprising a substrate and, disposed on the substrate, a dewet layer of a photoactive material, wherein the dewet layer of a photoactive material comprises a plurality of absorbing regions which comprise the photoactive material and a plurality of transparent regions which do not substantially comprise the photoactive material. Devices and processes for producing devices comprising the semi-transparent layer are also disclosed, as are building components and automotive components comprising the semi-transparent layer.

公开(公告)号：EP2904054A1

公开(公告)日：2015-08-12

申请号：EP13771555.3

申请日：2013-10-01

申请人： Isis Innovation Limited

发明人： FOORD, John Stuart ,  HU, Jingping

IPC分类号： C09C1/28 ,  C01B33/02

CPC分类号： C01B3/06 ,  B82Y30/00 ,  C01B33/02 ,  C01P2002/72 ,  C01P2004/03 ,  C01P2004/62 ,  C01P2004/64 ,  C09C1/28 ,  Y02E60/36 ,  Y02P20/132 ,  Y10T428/2982

摘要： The invention relates to the use of nonpassivated silicon to produce hydrogen, by hydrolysis of the nonpassivated silicon. In particular, the invention relates to a composition comprising nonpassivated silicon, a process for producing a composition comprising nonpassivated silicon, and a process for producing hydrogen by reacting the composition with water.

摘要翻译： 本发明涉及非钝化硅通过非钝化硅的水解产生氢的用途。 特别地，本发明涉及包含非钝化硅的组合物，用于生产包含非钝化硅的组合物的方法，以及通过使该组合物与水反应来生产氢的方法。

公开(公告)号：EP2850669A1

公开(公告)日：2015-03-25

申请号：EP13723945.5

申请日：2013-05-20

申请人： Isis Innovation Limited

发明人： SNAITH, Henry ,  LEE, Michael

IPC分类号： H01L51/42 ,  H01G9/20

CPC分类号： H01L31/0264 ,  H01G9/2004 ,  H01G9/2036 ,  H01L51/0032 ,  H01L51/4213 ,  H01L51/422 ,  H01L51/4226 ,  H01L2031/0344 ,  H01L2251/306 ,  Y02E10/549 ,  Y02P70/521

摘要： The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.

公开(公告)号：EP2708584A2

公开(公告)日：2014-03-19

申请号：EP13194501.6

申请日：2006-04-19

申请人： Abbott Cardiovascular Systems Inc.

发明人： Pacetti, Stephen, D. ,  Hossainy, Syed, Faiyaz, Ahmed ,  Gale, David, C.

IPC分类号： C09D167/04 ,  A61L31/10 ,  C08L101/00

CPC分类号： A61L31/10 ,  A61L31/06 ,  A61L31/148 ,  A61L31/16 ,  C08L101/00 ,  C09D167/04 ,  C08L67/04 ,  C08L2666/02

摘要： Implantable devices formed of or coated with a material that includes an amorphous poly(D,L-lactide) formed of a starting material such as meso-D,L-lactide are provided. The implantable device can be used for the treatment, mitigation, prevention, or inhibition of a disorder such as atherosclerosis, thrombosis, restenosis, hemorrhage, vascular dissection or perforation, vascular aneurysm, vulnerable plaque, chronic total occlusion, patent foramen ovale, claudication, anastomotic proliferation for vein and artificial grafts, bile duct obstruction, ureter obstruction, tumor obstruction, or combinations thereof.

摘要翻译： 提供由包含由诸如内消旋-D，L-丙交酯的原料形成的无定形聚（D，L-丙交酯）的材料形成或涂覆的可植入装置。 可植入装置可用于治疗，缓解，预防或抑制动脉粥样硬化，血栓形成，再狭窄，出血，血管解剖或穿孔，血管动脉瘤，易损斑块，慢性完全闭塞，卵圆孔未闭，跛行， 静脉和人造移植物的吻合增殖，胆管阻塞，输尿管阻塞，肿瘤阻塞或其组合。

公开(公告)号：EP2590910A2

公开(公告)日：2013-05-15

申请号：EP11738457.8

申请日：2011-07-06

申请人： Isis Innovation Limited

发明人： GOUVERNEUR, Veronique ,  LI, Lei ,  LIM, Yee-Hwee ,  HUIBAN, Mickael

IPC分类号： C07B59/00

CPC分类号： C07C37/62 ,  C07B59/001 ,  C07C209/74 ,  C07C227/16

摘要： The invention relates to a process for producing a process for producing an
18 F-labelled compound, the process comprising treating a compound of formula (I): wherein EDG is an electron-donating group selected from -OH, -OR
4 , -NHR
5 and -NR
55 R
5 ; R
1 , R
2 , X
1 and X
2 are as defined herein; and R
3 is selected from H, X
3 and X
4 , wherein X
3 is a monodentate cleavable surrogate group, and X
4 is a bidentate cleavable surrogate group which is bonded (a) to said X or X and (b) to the ring carbon atom para to EDG; with [
18 F]fluoride in the presence of an oxidant, thereby producing, when R
3 in the compound of formula (I) is H, an
18 F-labelled compound of formula (II), wherein EDG is as defined above and R
1 , R
2 , X
1 and X
2 are as defined herein; or thereby producing, when R
3 in the compound of formula (I) is said monodentate cleavable surrogate group X
4 , a compound of formula (Ilc), wherein EDG' is O, NR
5 , -NR
55 R
5 or [OR
4 ]
+ , and wherein R
4 , R
5 , R
55 , R
1 , R
2 , X
1 , X
2 and X
3 are as defined herein; or thereby producing, when R
3 in the compound of formula (I) is said bidentate cleavable surrogate group X
4 , a compound of formula (IIc) or a compound of formula (IId), wherein EDG' is O, NR
5 , -NR
55 R
5 or [OR
4 ]+, and wherein R
4 , R
5 , R
55 , R
1 , R
2 , X
1 , X
2 and X
4 are as defined herein.

公开(公告)号：EP3029696A1

公开(公告)日：2016-06-08

申请号：EP16152624.9

申请日：2013-05-20

申请人： Isis Innovation Limited

发明人： SNAITH, Henry ,  LEE, Michael

IPC分类号： H01G9/20 ,  H01L51/42

CPC分类号： H01L51/4213 ,  H01L31/0324 ,  H01L51/0032 ,  H01L51/422 ,  H01L51/4226 ,  H01L2031/0344 ,  Y02E10/549

摘要： The invention provides an optoelectronic device comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Typically the semiconductor, which may be a perovskite, is disposed on the surface of the porous dielectric scaffold material, so that it is supported on the surfaces of pores within the scaffold. In one embodiment, the optoelectronic device is an optoelectronic device which comprises a photoactive layer, wherein the photoactive layer comprises: (a) said porous dielectric scaffold material; (b) said semiconductor; and (c) a charge transporting material. The invention further provides the use, as a photoactive material in an optoelectronic device, of: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Further provided is the use of a layer comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; as a photoactive layer in an optoelectronic device. In another aspect, the invention provides a photoactive layer for an optoelectronic device comprising (a) a porous dielectric scaffold material; (b) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; and (c) a charge transporting material.

摘要翻译： 本发明提供了一种光电子器件，其包括：（i）多孔介电支架材料; 和（ii）与支架材料接触的具有小于或等于3.0eV的带隙的半导体。 典型地，可以是钙钛矿的半导体设置在多孔介电支架材料的表面上，使得其被支撑在支架内的孔的表面上。 在一个实施例中，光电子器件是包括光敏层的光电子器件，其中光敏层包括：（a）所述多孔介电支架材料; （b）所述半导体; 和（c）电荷传输材料。 本发明进一步提供了作为光电子器件中的光敏材料的用途：（i）多孔介电支架材料; 和（ii）与支架材料接触的具有小于或等于3.0eV的带隙的半导体。 进一步提供的是使用包含以下的层：（i）多孔介电支架材料; 和（ii）与所述支架材料接触的具有小于或等于3.0eV的带隙的半导体; 作为光电子器件中的光敏层。 另一方面，本发明提供了用于光电子器件的光敏层，其包含（a）多孔介电支架材料; （b）与脚手架材料接触的带隙小于或等于3.0eV的半导体; 和（c）电荷传输材料。

公开(公告)号：EP1973983B1

公开(公告)日：2016-03-30

申请号：EP07700334.1

申请日：2007-01-05

申请人： ISIS INNOVATION LIMITED ,  The University Court of the University of St. Andrews

发明人： Prof. Paul BURN, University of Queensland ,  SAMUEL, Ifor, David, William ,  BARCENA, Homar

IPC分类号： C09K11/06 ,  G01N33/22

CPC分类号： C09K11/06 ,  C08G83/002 ,  C09K2211/14 ,  C09K2211/1416 ,  C09K2211/1425 ,  G01N33/0057

公开(公告)号：EP2543368A1

公开(公告)日：2013-01-09

申请号：EP12187104.0

申请日：2008-12-03

申请人： Viamet Pharmaceuticals, Inc.

发明人： Schotzinger, Robert, J. ,  Hoekstra, William, J.

IPC分类号： A61K31/10 ,  A61K31/122 ,  A61K31/35 ,  A61K31/37 ,  A61K31/381 ,  A61K31/382 ,  A61K31/40 ,  A61K31/404 ,  A61K31/431 ,  A61K31/437 ,  A61K31/44 ,  A61K31/55 ,  A61K31/5513

CPC分类号： A61K31/10 ,  A61K31/122 ,  A61K31/35 ,  A61K31/37 ,  A61K31/381 ,  A61K31/382 ,  A61K31/40 ,  A61K31/404 ,  A61K31/431 ,  A61K31/437 ,  A61K31/44 ,  A61K31/55 ,  A61K31/5513

摘要： The presently disclosed subject matter is described to metalloenzyme inhibitors having metal binding moieties linked to a targeting moiety through a linking group or a direct bond, method of screening for metalloenzyme inhibitors, and methods for treating a metalloenzyme related disorder by administering a metalloenzyme inhibitor to a subject in need of treatment thereof.

摘要翻译： 将目前公开的主题描述为具有通过连接基团或直接键连接至靶向部分的金属结合部分的金属酶抑制剂，筛选金属酶抑制剂的方法，以及通过向金属酶抑制剂施用金属酶抑制剂来治疗金属酶相关病症的方法 需要治疗。

公开(公告)号：EP2474005A2

公开(公告)日：2012-07-11

申请号：EP10754966.9

申请日：2010-09-02

申请人： Isis Innovation Limited

发明人： KUZNETSOV, Vladimir, L. ,  EDWARDS, Peter, P.

IPC分类号： H01B1/08

CPC分类号： H01B1/08 ,  B05D3/10 ,  B05D5/12 ,  C23C18/08 ,  C23C18/1208 ,  C23C18/1216 ,  C23C18/1233 ,  C23C18/1245 ,  C23C18/1254 ,  C23C18/1258 ,  C23C18/1291 ,  C23C18/1295 ,  Y10T428/24479 ,  Y10T428/24628 ,  Y10T428/24802

摘要： The invention provides a process for producing a transparent conducting film, which film comprises a doped zinc oxide wherein the dopant comprises Si, which process comprises: disposing a composition which is a liquid composition or a gel composition onto a substrate, wherein the composition comprises Zn and Si; and heating said substrate. The invention further provides transparent conducting films obtainable by the process of the invention, including transparent conducting films which comprise a doped zinc oxide wherein the dopant comprises Si, and wherein the film covers a surface area equal to or greater than 0.01 m
2 . The invention also provides a coated substrate, which substrate comprises a surface, which surface is coated with a transparent conducting film, wherein the film comprises a doped zinc oxide wherein the dopant comprises Si, and wherein the area of said surface which is coated with said film is equal to or greater than 0.01 m
2 . The invention further provides coatings comprising the films of the invention, processes for producing such films and coatings, and various uses of the films and coatings.