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    Buffer layer and manufacturing method thereof, reaction solution, photoelectric conversion device, and solar cell
    5.
    发明公开
    Buffer layer and manufacturing method thereof, reaction solution, photoelectric conversion device, and solar cell 有权
    缓冲层及其制造方法，反应溶液，光电转换装置和太阳能电池

    公开(公告)号：EP2309555A3

    公开(公告)日：2014-10-29

    申请号：EP10186412.2

    申请日：2010-10-04

    Applicant: Fujifilm Corporation

    Inventor： Kawano, Tetsuo

    IPC: H01L31/18 ,  C23C18/12 ,  H01L31/0392

    CPC classification number: C23C18/1204 ,  C23C18/1208 ,  C23C18/1245 ,  C23C18/1266 ,  C23C18/127 ,  C25D11/04 ,  C25D11/08 ,  C25D11/10 ,  H01L21/02422 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02557 ,  H01L21/02601 ,  H01L21/02628 ,  H01L31/03928 ,  H01L31/0749 ,  H01L31/1836 ,  Y02E10/541 ,  Y02P70/521

    Abstract: A method of manufacturing a Zn system buffer layer using a reaction solution unlikely to become opaque white, including the steps of forming a fine particle layer of ZnS, Zn (S, O), and/or Zn (S, O, OH), mixing an aqueous solution (I) which includes a component (Z), an aqueous solution (II) which includes a component (S), and an aqueous solution (III) which includes a component (C) to obtain a mixed solution and mixing an aqueous solution (IV) which includes a component (N) in the mixed solution to prepare a reaction solution in which the concentration of the component (C) is 0.001 to 0.25M, concentration of the component (N) is 0.41 to 1.0M, and the pH before the start of reaction is 9.0 to 12.0, and, using the reaction solution, forming a Zn compound layer of Zn (S, 0) and/or Zn (S, O, OH) on the fine particle layer by a liquid phase method with a reaction temperature of 70 to 95°C.

    Abstract translation: 包括形成ZnS，Zn（S，O）和/或Zn（S，O，OH）的微粒层的步骤，使用不易变成不透明白色的反应溶液制造Zn系缓冲层的方法， 将包含组分（Z）的水溶液（I），包含组分（S）的水溶液（II）和包含组分（C）的水溶液（III）混合以获得混合溶液并混合 在混合溶液中含有成分（N）的水溶液（IV），制备成分（C）的浓度为0.001〜0.25M，成分（N）的浓度为0.41〜1.0M ，反应开始前的pH为9.0〜12.0，使用该反应液，在微粒层上形成Zn（S，O）和/或Zn（S，O，OH）的Zn化合物层， 液相法，反应温度为70〜95℃。

    METHOD FOR MANUFACTURING TRANSPARENT, HEAT-RESISTANT GAS-BARRIER FILM
    6.
    发明公开
    METHOD FOR MANUFACTURING TRANSPARENT, HEAT-RESISTANT GAS-BARRIER FILM 有权
    VERFAHREN ZUR HERSTELLUNG EINER TRANSPARENTENHITZEBESTÄNDIGENGASSPERRFOLIE

    公开(公告)号：EP2777929A1

    公开(公告)日：2014-09-17

    申请号：EP12847483.0

    申请日：2012-11-08

    Applicant: Mitsubishi Gas Chemical Company, Inc.

    Inventor： SUENAGA, Shuya ,  MIKI, Yasushi

    IPC: B32B9/00 ,  B32B18/00 ,  B32B27/34 ,  B32B37/00 ,  B32B38/00

    CPC classification number: B32B33/00 ,  B05D3/0254 ,  B05D2505/50 ,  B32B27/00 ,  B32B2037/243 ,  B32B2307/306 ,  B32B2307/412 ,  B32B2307/7242 ,  B32B2379/08 ,  C08J7/045 ,  C08J7/047 ,  C08J2379/08 ,  C08J2483/16 ,  C23C18/1208 ,  C23C18/1212

    Abstract: The present invention provides a process for producing a transparent heat-resistant gas-barrier film capable of exhibiting a good gas-barrier property and maintaining good properties even after heat-treated at a temperature of 250°C or higher, in a simple manner at low costs without need of a large size facility and a number of steps. The process for producing a transparent heat-resistant gas-barrier film according to the present invention includes the steps of coating a polysilazane-containing solution onto at least one surface of a transparent polyimide film formed of a polyimide containing a specific repeated unit; and calcining the coated solution at a temperature of 180°C or higher to laminate a silicon oxide layer obtained by the calcination on the transparent polyimide film.

    Abstract translation: 本发明提供一种即使在250℃以上的温度下进行热处理后也能够显示出良好的阻气性和保持良好性能的透明耐热阻气膜的制造方法， 低成本，无需大型设施和多个步骤。 根据本发明的透明耐热阻气膜的制造方法包括以下步骤：将聚硅氮烷溶液涂布在由含有特定重复单元的聚酰亚胺形成的透明聚酰亚胺膜的至少一个表面上; 并在180℃或更高的温度下煅烧涂布的溶液，以将通过煅烧获得的氧化硅层层压在透明聚酰亚胺膜上。

    PROCEDE DE REALISATION D'UN REVETEMENT A BASE D'UNE CERAMIQUE OXYDE CONFORME A LA GEOMETRIE D'UN SUBSTRAT PRESENTANT DES MOTIFS EN RELIEF
    9.
    发明授权
    PROCEDE DE REALISATION D'UN REVETEMENT A BASE D'UNE CERAMIQUE OXYDE CONFORME A LA GEOMETRIE D'UN SUBSTRAT PRESENTANT DES MOTIFS EN RELIEF 有权
    制造方法与底物与浮雕图案柔顺涂层对KERAMIKOXIDBASIS几何

    公开(公告)号：EP1969155B1

    公开(公告)日：2012-08-15

    申请号：EP06819672.4

    申请日：2006-11-22

    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Inventor： LEBRETTE, Séverine ,  BOY, Philippe ,  BELLEVILLE, Philippe ,  MONTOUILLOUT, Yves

    IPC: C23C18/12

    CPC classification number: C23C18/1208 ,  C23C18/1225 ,  C23C18/1254

    Abstract: The invention concerns a method for making conformable ceramic oxide layers on substrates having raised designs including: a step of depositing on said substrate a layer of sol-gel solution precursor of said ceramics; a step of heat treatment of said layer to transform same into ceramics; said steps being optionally repeated one or more times. The invention is characterized in that the sol-gel solution precursor of said ceramics is prepared by a method including the following successive steps: a) preparing a first solution by contacting one or more molecular precursors of metals designed to be constituents of the ceramics in a medium comprising a diol solvent and optionally an aliphatic monoalcohol; b) allowing the solution obtained in a) to rest during sufficient time required to obtain a solution having a substantially constant viscosity; c) diluting at a predetermined proportion the solution obtained in b) with a diol solvent optionally identical to the one in step a) or a solvent miscible with the diol solvent used in step a).

    TRANSPARENT CONDUCTING OXIDES
    10.
    发明公开
    TRANSPARENT CONDUCTING OXIDES 有权
    透明导电氧化物

    公开(公告)号：EP2474005A2

    公开(公告)日：2012-07-11

    申请号：EP10754966.9

    申请日：2010-09-02

    Applicant: Isis Innovation Limited

    Inventor： KUZNETSOV, Vladimir, L. ,  EDWARDS, Peter, P.

    IPC: H01B1/08

    CPC classification number: H01B1/08 ,  B05D3/10 ,  B05D5/12 ,  C23C18/08 ,  C23C18/1208 ,  C23C18/1216 ,  C23C18/1233 ,  C23C18/1245 ,  C23C18/1254 ,  C23C18/1258 ,  C23C18/1291 ,  C23C18/1295 ,  Y10T428/24479 ,  Y10T428/24628 ,  Y10T428/24802

    Abstract: The invention provides a process for producing a transparent conducting film, which film comprises a doped zinc oxide wherein the dopant comprises Si, which process comprises: disposing a composition which is a liquid composition or a gel composition onto a substrate, wherein the composition comprises Zn and Si; and heating said substrate. The invention further provides transparent conducting films obtainable by the process of the invention, including transparent conducting films which comprise a doped zinc oxide wherein the dopant comprises Si, and wherein the film covers a surface area equal to or greater than 0.01 m
    2 . The invention also provides a coated substrate, which substrate comprises a surface, which surface is coated with a transparent conducting film, wherein the film comprises a doped zinc oxide wherein the dopant comprises Si, and wherein the area of said surface which is coated with said film is equal to or greater than 0.01 m
    2 . The invention further provides coatings comprising the films of the invention, processes for producing such films and coatings, and various uses of the films and coatings.

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