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45 条记录 (耗时 0.018 秒)

    STRESSED MAGNETORESISTIVE TAMPER DETECTION DEVICES
    2.
    发明公开
    STRESSED MAGNETORESISTIVE TAMPER DETECTION DEVICES 有权
    回弹磁阻伪造检测装置

    公开(公告)号：EP2135254A1

    公开(公告)日：2009-12-23

    申请号：EP08742038.6

    申请日：2008-03-10

    申请人： NVE Corporation

    发明人： DEAK, James, G.

    IPC分类号： G11C19/08

    CPC分类号： G11C11/16 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/1695

    摘要： A tamper sensing system mounted with respect to a protected structure so as to have corresponding stress changes occur therein in response to selected kinds of tamperings with said protected structure comprising a first pair of stress affected magnetoresistive memory devices each capable of having a magnetic material layer therein established in a selected one of a pair of alternative magnetization states if in a first kind of stress condition and of being established in a single magnetization state if in an alternative second kind of stress condition, and the magnetic material layer in each having a magnetization in a first direction in one of the pair of alternative magnetization states and in a second direction in that remaining one of the pair of magnetization states. A first magnetizing electrical conductor extends adjacent to each of the first pair of stress affected magnetoresistive memory devices to establish said magnetic material layer in that one of said pair of alternative magnetization states thereof so as to have its said corresponding magnetization be oppositely directed with respect to said magnetization of that other. The first pair of stress affected magnetoresistive memory devices can each be provided by a spin dependent tunneling device having differing numbers of magnetization states available thereto depending on whether being in differing ones of alternative stress conditions.

    Magnetic current sensor
    3.
    发明公开
    Magnetic current sensor 失效
    磁电流传感器

    公开(公告)号：EP1906194A2

    公开(公告)日：2008-04-02

    申请号：EP07124177.2

    申请日：1997-07-24

    申请人： NVE Corporation

    发明人： BLACK, William, C., Jr. ,  HERMANN, Theodore, M.

    IPC分类号： G01R33/09

    CPC分类号： G01R15/205 ,  G01R33/09

    摘要： A current determiner having an output (60) at which representations of input currents are provided including an input conductor (25) for the input current and a current sensor (54) supported on a substrate (10) electrically isolated from one another but with the sensor (54) positioned in the magnetic fields arising about the input conductor (25) due to any input currents. The sensor (54) extends along the substrate (10) in a direction primarily perpendicular to the extent of the input conductor and is formed of at least a pair of thin-film ferromagnetic layers (12, 13) separated by a non-magnetic conductive layer (14). The sensor (54) can be electrically connected to an electronic circuitry (26-27, 51-52, 58-60) formed in the substrate (10) including a nonlinearity adaptation circuit to provide representations of the input currents of increased accuracy despite nonlinearities in the current sensor (54), and can include further current sensors (54, 55) in bridge circuits.

    摘要翻译： 具有输出（60）的电流确定器，在所述输出（60）处提供输入电流的表示，所述输入包括用于所述输入电流的输入导体（25）和支撑在基板（10）上的电流传感器（54），所述基板彼此电隔离， 传感器（54）位于由于任何输入电流而在输入导体（25）周围产生的磁场中。 传感器（54）在基本上垂直于输入导体的范围的方向上沿着衬底（10）延伸并且由至少一对由非磁性导电层（12,13）分隔的薄膜铁磁层 层（14）。 传感器（54）可以电连接到在衬底（10）中形成的包括非线性适应电路的电子电路（26-27,51-52,58-60），以提供精度提高的输入电流的表示，尽管非线性 在电流传感器（54）中，并且可以在桥电路中包括另外的电流传感器（54,55）。

    THERMALLY OPERATED SWITCH CONTROL MEMORY CELL
    4.
    发明公开
    THERMALLY OPERATED SWITCH CONTROL MEMORY CELL 审中-公开
    热控POWERED变存储器

    公开(公告)号：EP1639656A2

    公开(公告)日：2006-03-29

    申请号：EP04777041.7

    申请日：2004-06-23

    申请人： NVE Corporation

    发明人： DAUGHTON, James M. ,  POHM, Arthur V.

    IPC分类号： H01L31/119

    CPC分类号： H01L27/228 ,  G11C11/16 ,  H01L43/10

    摘要： A ferromagnetic thin-film based digital memory having a substrate supporting bit structures that are electrically interconnected with information storage and retrieval circuitry and having magnetic material films in which a characteristic magnetic property is substantially maintained below an associated critical temperature above which such magnetic property is not maintained separated by at least one layer of a nonmagnetic material with each bit structure having an interconnection structure providing electrical contact thereto at a contact surface thereof substantially parallel to the intermediate layer positioned between the first contact surface and the substrate. A plurality of word line structures located across from a corresponding one of the bit structures on an opposite side of the intermediate layer of a corresponding one of said bit structures from its interconnection structure provides electrical contact thereto. Sufficient electrical current selectively drawn through each of these bit structures and its interconnection structure can cause substantial heating of that bit structure to raise temperatures thereof to have at least one of the magnetic material films therein at least approach its corresponding associated critical temperature while being substantially above temperatures of at least an adjacent said bit structure because of sufficient thermal isolation.

    SPIN DEPENDENT TUNNELING MEMORY
    5.
    发明公开
    SPIN DEPENDENT TUNNELING MEMORY 审中-公开
    自旋相关的记忆隧道

    公开(公告)号：EP1245029A1

    公开(公告)日：2002-10-02

    申请号：EP00978395.2

    申请日：2000-11-06

    申请人： NVE Corporation

    发明人： POHM, Arthur, V.

    IPC分类号： G11C7/00

    CPC分类号： G11C14/0081 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01L27/224 ,  H01L27/228

    摘要： A digital data memory having a bit structure (17) in a memory cell based on a dielectric intermediate separating material (14) with two major surfaces having thereon an anisotropic ferromagnetic thin-film (12, 13; 12', 13') of differing thicknesses. These bit structures (17) are fabricated within structural extent limits to operate satisfactorily, and are fabricated as series, parallel selectively connected members (11',17,20; 74,70,17,90,78; 103,104,17,100,102) of storage line structures. A corresponding conductive word line structure (22) adjacent corresponding ones of these memory cells is used for selecting or operating them, or both, in data storage and retrieval operations.

    Spin dependent tunneling memory
    8.
    发明公开
    Spin dependent tunneling memory 失效
    SPINABHÄNGIGERTUNNELSPEICHER

    公开(公告)号：EP2447947A1

    公开(公告)日：2012-05-02

    申请号：EP05077699.6

    申请日：1997-11-07

    申请人： NVE Corporation

    发明人： Daughton, James M. ,  Pohm, Arthur V. ,  Everitt, Brenda A.

    IPC分类号： G11C11/16 ,  G11C11/15 ,  G11C11/00

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11C11/161

    摘要： The invention relates to a ferromagnetic thin-film based digital memory, said memory comprising:
    a plurality of bit structures interconnected with information retrieval circuitry having a plurality of transistors so that each said bit structure has a said transistor electrically coupled thereto that selectively substantially prevents current in at least one direction along a current path through that bit structure, each said bit structure comprising:
    an electrically insulative intermediate layer, said intermediate layer having two major surfaces on opposite sides thereof; and
    a memory film of an anisotropic ferromagnetic material on each of said intermediate layer major surfaces having switching thresholds for magnetizations of said film adjacent each of said intermediate layer major surfaces that differ in value for a switching of these magnetizations from both being directed initially at least in part in substantially a common direction to being directed at least in part in substantially opposite directions versus a switching from being directed initially at least in part in substantially opposite directions to both being directed at least in part in substantially a common direction; and
    a plurality of word line structures each having a pair of word line end terminal regions adapted to conduct electrical current in at least one direction therethrough, each of said pairs of word line end terminal regions having an electrical conductor electrically connected therebetween which is located across an electrical insulating layer from said memory film on one of said major surfaces of said intermediate layer of a corresponding one of said bit structures.

    摘要翻译： 本发明涉及一种基于铁磁性薄膜的数字存储器，所述存储器包括：多个位结构，其与具有多个晶体管的信息检索电路互连，使得每个所述位结构具有电耦合到其上的所述晶体管，其选择性地基本上防止电流 在沿着通过该位结构的电流路径的至少一个方向上，每个所述位结构包括：电绝缘中间层，所述中间层在其相对侧上具有两个主表面; 以及每个所述中间层主表面上的各向异性铁磁材料的记忆膜，其具有与所述膜相邻的每个所述中间层主表面的磁化的切换阈值，所述切割阈值对于这些磁化的切换的价值不同，起始于至少 部分地基本上相同的方向被指向至少部分基本上相反的方向，相对于从至少部分地基本上相反的方向被引导到至少部分地基本上是共同的方向; 以及多个字线结构，每个字线结构具有适于在至少一个方向上通过其传导电流的一对字线端子区域，所述一对字线端子区域中的每一个具有电连接在它们之间的电导体， 在相应的所述钻头结构的所述中间层的所述主表面之一上的所述存储膜的电绝缘层。