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    APPARATUS FOR ACCELERATING AN ION BEAM
    3.
    发明公开
    APPARATUS FOR ACCELERATING AN ION BEAM 有权
    设备加速的离子束

    公开(公告)号：EP2036112A2

    公开(公告)日：2009-03-18

    申请号：EP07786966.7

    申请日：2007-06-29

    申请人： Nordiko Technical Services Limited

    发明人： DAVIS, Mervyn Howard ,  HOLMES, Andrew James Timothy

    IPC分类号： H01J37/04 ,  H01J37/305 ,  B01J19/08 ,  H05H5/00 ,  H01J27/02

    CPC分类号： H01J37/04 ,  H01J27/024 ,  H01J37/3056 ,  H01J2237/04735 ,  H01J2237/08 ,  H05H15/00

    摘要： An apparatus (200) for accelerating an ion beam comprising: a) a first electrode (202) having a proximal side and a distal side and having at least one aperture (201) therethrough, the wall of the aperture being shaped such that the radius of the aperture on the distal side of the first electrode is greater than that on the proximal side of the electrode; b) a second electrode (204) located such that it is adjacent to but spaced from the distal side of the first electrode and having at least one aperture therethrough; and c) a third electrode (206) located such that it is adjacent to and spaced from the second electrode and having at least one aperture therethrough, said at least one apertures in each electrode being aligned with corresponding apertures in the other electrodes; wherein the electrodes are arranged such that there is a potential difference between the first and second electrodes and a potential difference between the second and third electrodes.

    ION BEAM VACUUM SPUTTERING APPARATUS AND METHOD
    6.
    发明授权
    ION BEAM VACUUM SPUTTERING APPARATUS AND METHOD 有权
    DEVICE AND METHOD FOR真空离子束溅射

    公开(公告)号：EP1212777B1

    公开(公告)日：2007-05-30

    申请号：EP00962690.4

    申请日：2000-09-18

    申请人： Nordiko Technical Services Limited

    发明人： DAVIS, Mervyn, Howard ,  PROUDFOOT, Gary ,  PEARSON, David, Ian, Charles

    IPC分类号： H01J37/304 ,  H01J27/02 ,  H01J27/16 ,  H01J27/18

    CPC分类号： H01J37/304 ,  H01J2237/3146

    摘要： A vacuum sputtering apparatus (1) includes an ion gun (3) whose ion extraction system (5) includes an accelerator grid (22) connected to a d.c. voltage supply (21). The plasma in the ion gun (3) is generated by r.f. power delivered by an r.f. coil (6) and forms a beam of ions (8) which is projected towards a target (9) from which material is sputtered on to a substrate (12). Magnets (7) trap adjacent the wall of the plasma generation chamber (4) electrons released as a result of plasma formation. An r.f. power supply (32) supplies r.f. power to the r.f. coil (6). A control circuit includes components (23, 30; 23, 30, 38, 39, 40, 41) arranged to derive from the current flowing from the d.c. voltage supply (21) to the accelerator grid (22) a control signal for controlling the r.f power supply means (32). This control signal can be supplied to a computer (31) which carries out fast accelerator grid current/time integration or fast accelerator grid power/time integration, to determine the rate of deposition of sputtered material upon the substrate (12). Alternatively the control signal can be fed into the r.f. power supply means (32) for direct closed loop accelerator grid current or grid power control.

    ION GUN
    7.
    发明授权
    ION GUN 无效
    离子源

    公开(公告)号：EP0934600B1

    公开(公告)日：2005-01-26

    申请号：EP97909491.9

    申请日：1997-10-23

    申请人： Nordiko Technical Services Limited

    发明人： PROUDFOOT, Gary

    IPC分类号： H01J27/02 ,  H01J27/18 ,  H01J37/08

    CPC分类号： H01J27/024 ,  H01J27/18 ,  H01J37/08

    摘要： The present invention relates to a low energy ion gun (3; 103) for use in ion beam processing comprising: a plasma chamber (5) comprising an open ended, conductive, non-magnetic body, a first end of which is closed by a flat or minimally dished dielectric member and with electrodes (6) at a second end thereof opposite the first end; primary magnet means (16) arranged around the body for trapping electrons adjacent the wall of the plasma chamber in use of the ion gun and an r.f. induction device including a substantially flat coil (12) which lies adjacent to the dielectric member for inductively generating a plasma in the plasma chamber, characterised in that the electrodes include a first multi-aperture grid (29; 127) arranged for connection to a first positive potential source and positioned to contact the plasma in the plasma chamber; a second multi-aperture grid (29a; 128) arranged for connection to a second potential source of lower potential than the first source so as to produce a first acceleration field for accelerating ions towards and through the second grid; and a third multi-aperture grid (30; 129) arranged for connection to a third potential source of lower potential than the second potential source so as to produce a second acceleration field for accelerating ions towards and through the third grid, the apertures of the first, second and third grids being aligned so that particles emerging from an aperture of the first grid are accelerated through a corresponding aperture of the second grid and then through a corresponding aperture of the third grid in the form of a beamlet, a plurality of beamlets from the third grid forming a beam downstream of the third grid.

    VACUUM SPUTTERING APPARATUS
    8.
    发明授权
    VACUUM SPUTTERING APPARATUS 有权
    VACUUMZERSTÄUBUNGSGERÄT

    公开(公告)号：EP1010194B1

    公开(公告)日：2005-01-19

    申请号：EP98940464.5

    申请日：1998-09-03

    申请人： Nordiko Technical Services Limited

    发明人： PEARSON, David Ian Charles

    IPC分类号： H01J37/34

    CPC分类号： H01J37/3452 ,  H01J37/3408 ,  H01J37/3455

    摘要： A vacuum sputtering apparatus (1) is described in which a target (7) having a target face (8) is mounted in a vacuum chamber (2) opposite a substrate (15). A magnetic pole plate (16) having a non-magnetic carrier plate (17) attached thereto is mounted behind the target (7) on a shaft (28) and can be rotated by means of a motor (29) about an axis substantially orthogonal to the target face (8). Carrier plate (17) has an array of holes (19) each of which can receive a corresponding first bar magnet (20, 21). There are fewer magnets (20, 21) than there are holes (19) and the magnets (20, 21) are removable from their holes (19). Carrier plate (17) also has a circumferential line of holes (22), in each of which may be mounted a corresponding second bar magnet (23). By varying the number and positions of the bar magnets (20, 21, 23) in the holes (19, 22) a variety of different high density plasma zone shapes (24; 25, 26; 27; 28) can be produced upon the target face (8). Conveniently, the bar magnets (20, 21, 23) are round in section but can alternatively be of square or hexagonal section, if desired.

    Apparatus
    9.
    发明公开
    Apparatus 审中-公开
    仪器

    公开(公告)号：EP2314733A1

    公开(公告)日：2011-04-27

    申请号：EP10179582.1

    申请日：2002-11-13

    申请人： Nordiko Technical Services Limited

    发明人： Davis, Mervyn Howard

    IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/56

    CPC分类号： H01J37/3473 ,  C23C14/3464 ,  C23C14/352 ,  C23C14/568

    摘要： A vacuum sputterring apparatus capable of depositing a plurality of thin film layers on a substrate, the apparatus comprising: a vacuum chamber (1) having gas inlet means and gas evacuation means; a substrate support table (2) arranged to be rotatable about at least one axis perpendicular to the plane of the table; means for rotating the substrate support table about said at least one axis; a plurality of sputtering targets (5) spaced around the walls of the chamber, each sputtering target having electrode means associated therewith; and means for altering the position of the substrate support table relative to each one of the plurality of sputtering targets (4) such that in use a substrate placed on the substrate support table may have a film deposited thereon of atoms sputtered from at least one of the said plurality of targets and subsequently, following alteration of the position of the substrate support table, have at least one further film deposited thereon by exposure to atoms form at least one other of said plurality of targets. A method of depositing multi-layer materials on a substrate and a method of controlling stoichiometry of deposited alloys are also provided.

    摘要翻译： 一种真空溅射装置，能够在基片上沉积多个薄膜层，该装置包括：一个具有气体入口装置和气体排出装置的真空室; 衬底支撑台（2），所述衬底支撑台布置成可围绕垂直于所述台的所述平面的至少一个轴线旋转; 用于围绕所述至少一个轴旋转衬底支撑台的装置; 围绕腔室的壁间隔开的多个溅射靶（5），每个溅射靶具有与其相关联的电极装置; 以及用于改变所述衬底支撑台相对于所述多个溅射靶（4）中的每一个的位置的装置，使得在使用中，放置在所述衬底支撑台上的衬底可具有沉积在其上的由至少一个 所述多个靶并且随后在改变所述基板支撑台的位置之后通过暴露于所述多个靶中的至少另一个靶的原子而在其上沉积至少一个另外的膜。 还提供了在衬底上沉积多层材料的方法以及控制沉积的合金的化学计量的方法。