公开(公告)号：EP3042390A4

公开(公告)日：2017-04-12

申请号：EP13892844

申请日：2013-09-04

申请人： INTEL CORP ,  GOEL NITI ,  PATHI PRAGYANSRI ,  DASGUPTA SANSAPTAK ,  POWERS JAMES M ,  CHU-KUNG BENJAMIN ,  CHAU ROBERT S

发明人： MUKHERJEE NILOY ,  GOEL NITI ,  GARDNER SANAZ K ,  PATHI PRAGYANSRI ,  METZ MATTHEW V ,  DASGUPTA SANSAPTAK ,  SUNG SEUNG HOON ,  POWERS JAMES M ,  DEWEY GILBERT ,  CHU-KUNG BENJAMIN ,  KAVALIEROS JACK T ,  CHAU ROBERT S

IPC分类号： H01L21/20 ,  H01L21/762

CPC分类号： H01L21/02694 ,  H01L21/02381 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02609 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/76224 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/8258 ,  H01L27/0924 ,  H01L29/045 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/267 ,  H01L29/7848

摘要： Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type III-V or Germanium (Ge) material (e.g., a “buffer” material) from a top surface of a substrate material. The defects may result from collision of selective epitaxial sidewall growth with oxide trench sidewalls. Such trenches include (1) a trench having sloped sidewalls at an angle of between 40 degrees and 70 degrees (e.g., such as 55 degrees) with respect to a substrate surface; and/or (2) a combined trench having an upper trench over and surrounding the opening of a lower trench (e.g., the lower trench may have the sloped sidewalls, short vertical walls, or tall vertical walls). These trenches reduce or prevent defects in the epitaxial sidewall growth where the growth touches or grows against vertical sidewalls of a trench it is grown in.

公开(公告)号：EP3042390A1

公开(公告)日：2016-07-13

申请号：EP13892844.5

申请日：2013-09-04

申请人： Intel Corporation ,  Goel, Niti ,  Pathi, Pragyansri ,  Dasgupta, Sansaptak ,  Powers, James M. ,  Chu-kung, Benjamin ,  Chau, Robert S.

发明人： MUKHERJEE, Niloy ,  GOEL, Niti ,  GARDNER, Sanaz K. ,  PATHI, Pragyansri ,  METZ, Matthew V. ,  DASGUPTA, Sansaptak ,  SUNG, Seung Hoon ,  POWERS, James M. ,  DEWEY, Gilbert ,  CHU-KUNG, Benjamin ,  KAVALIEROS, Jack T. ,  CHAU, Robert S.

IPC分类号： H01L21/20

CPC分类号： H01L21/02694 ,  H01L21/02381 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02609 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/76224 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L21/8258 ,  H01L27/0924 ,  H01L29/045 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/267 ,  H01L29/7848

摘要： Trenches (and processes for forming the trenches) are provided that reduce or prevent crystaline defects in selective epitaxial growth of type III-V or Germanium (Ge) material (e.g., a “buffer” material) from a top surface of a substrate material. The defects may result from collision of selective epitaxial sidewall growth with oxide trench sidewalls. Such trenches include (1) a trench having sloped sidewalls at an angle of between 40 degrees and 70 degrees (e.g., such as 55 degrees) with respect to a substrate surface; and/or (2) a combined trench having an upper trench over and surrounding the opening of a lower trench (e.g., the lower trench may have the sloped sidewalls, short vertical walls, or tall vertical walls). These trenches reduce or prevent defects in the epitaxial sidewall growth where the growth touches or grows against vertical sidewalls of a trench it is grown in.

摘要翻译： 设置的沟槽（与用于形成沟槽的过程）并减少或防止在类型III-V族或锗（Ge）材料（E. G.，“缓冲”材料）的选择性外延生长晶形缺陷从基片材料的顶表面上。 缺陷可能是由与侧壁氧化物沟槽侧壁选择性外延生长的碰撞。 搜索沟槽包括（I）在以40度和70度之间的角度具有倾斜的沟槽侧壁：相对于表面的基材;（E. G，如55度）。 和/或（2）具有组合沟槽上沟槽上方和周围的下部沟槽的开口（例如，下沟槽可以具有倾斜侧壁，短的垂直壁，或高的竖直壁）。 这些沟槽减小或防止在外延侧壁生长缺陷，其中生长触及或生长针对它在生长在沟槽的垂直侧壁。