公开(公告)号：EP2415083A4

公开(公告)日：2013-05-15

申请号：EP10759377

申请日：2010-04-01

申请人： TAIWAN SEMICONDUCTOR MFG

发明人： LOCHTEFELD ANTHONY J

IPC分类号： H01L33/00 ,  H01L21/02 ,  H01L31/0304 ,  H01L33/08 ,  H01L33/12 ,  H01L33/16 ,  H01L33/24

CPC分类号： H01L27/0814 ,  C30B29/406 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/861 ,  H01L31/0304 ,  H01L33/007 ,  H01L33/08 ,  H01L33/12 ,  H01L33/16 ,  H01L33/24 ,  Y02E10/544 ,  Y02P70/521

公开(公告)号：EP2335273A4

公开(公告)日：2012-01-25

申请号：EP09815273

申请日：2009-09-18

申请人： TAIWAN SEMICONDUCTOR MFG

发明人： FIORENZA JAMES ,  LOCHTEFELD ANTHONY ,  BAI JIE ,  PARK JI-SOO ,  HYDRICK JENNIFER ,  LI JIZHONG ,  CHENG ZHIYUAN

IPC分类号： H01L21/20 ,  H01L21/02 ,  H01L31/042

CPC分类号： H01L21/02538 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/205 ,  H01L31/0687 ,  H01L31/06875 ,  H01L31/1808 ,  H01L31/1852 ,  H01L31/1892 ,  Y02E10/544

摘要： Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer.

公开(公告)号：EP2441224A4

公开(公告)日：2017-10-11

申请号：EP10786924

申请日：2010-06-11

申请人： TAIWAN SEMICONDUCTOR MFG CO LTD

发明人： STANWOOD KENNETH ,  GELL DAVID

IPC分类号： H04L27/26 ,  H04L12/24 ,  H04L12/801 ,  H04W28/24

CPC分类号： H04L47/32 ,  H04L41/0645 ,  H04L41/0893 ,  H04L41/0896 ,  H04L41/5009 ,  H04L41/5035 ,  H04L41/5067 ,  H04L47/12 ,  H04L47/20 ,  H04W28/24

摘要： Systems and methods for optimizing system performance of capacity and spectrum constrained, multiple-access communication systems by selectively discarding packets are provided. The systems and methods provided herein can drive changes in the communication system using control responses. One such control responses includes the optimal discard (also referred to herein as “intelligent discard”) of network packets under capacity constrained conditions. Some embodiments provide an interactive response by selectively discarding packets to enhance perceived and actual system throughput, other embodiments provide a reactive response by selectively discarding data packets based on their relative impact to service quality to mitigate oversubscription, others provide a proactive response by discarding packets based on predicted oversubscription, and others provide a combination thereof.

公开(公告)号：EP2415083B1

公开(公告)日：2017-06-21

申请号：EP10759377

申请日：2010-04-01

申请人： TAIWAN SEMICONDUCTOR MFG CO LTD

发明人： LOCHTEFELD ANTHONY J

IPC分类号： H01L33/00 ,  H01L21/02 ,  H01L31/0304 ,  H01L33/08 ,  H01L33/12 ,  H01L33/16 ,  H01L33/24

CPC分类号： H01L27/0814 ,  C30B29/406 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/02609 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/861 ,  H01L31/0304 ,  H01L33/007 ,  H01L33/08 ,  H01L33/12 ,  H01L33/16 ,  H01L33/24 ,  Y02E10/544 ,  Y02P70/521