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公开(公告)号:EP3475979B1
公开(公告)日:2020-05-27
申请号:EP17735056.8
申请日:2017-06-26
申请人: ABB Schweiz AG
IPC分类号: H01L23/473 , H05K1/02
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公开(公告)号:EP2992536B1
公开(公告)日:2017-05-31
申请号:EP14719794.1
申请日:2014-04-29
申请人: ABB Schweiz AG
发明人: KEARNEY, Daniel , DROFENIK, Uwe
CPC分类号: H01F27/325 , H01F5/02 , H01F27/085 , H01F27/306
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公开(公告)号:EP3298626A1
公开(公告)日:2018-03-28
申请号:EP16725817.7
申请日:2016-05-20
申请人: ABB Schweiz AG
发明人: TRAUB, Felix , MOHN, Fabian , SCHUDERER, Jürgen , KEARNEY, Daniel , KICIN, Slavo
IPC分类号: H01L23/538 , H01L23/64 , H01L25/07
CPC分类号: H01L23/5385 , H01L23/3735 , H01L23/49811 , H01L23/645 , H01L25/072 , H01L29/00 , H01L2224/48091 , H01L2224/48137 , H01L2224/49111 , H01L2924/19107 , H01L2924/00014
摘要: The present invention relates to a power semiconductor module, comprising at least two power semiconductor devices, wherein the at least two power semiconductor devices comprise at least one power semiconductor transistor and at least one power semiconductor diode, wherein at least a first substrate is provided for carrying the power semiconductor transistor in a first plane, the first plane lying parallel to the plane of the substrate, wherein the power semiconductor diode is provided in a second plane, wherein the first plane is positioned between the substrate and the second plane in a direction normal to the first plane and wherein the first plane is spaced apart from the second plane in a direction normal to the first plane. The first plane is spaced apart from the second plane in a direction normal to the first plane, whereby the first substrate is based on a direct bonded copper substrate and the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a layer of a printed circuit board is provided for carrying the diode. Alternatively, the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a foil is provided for carrying the diode, wherein the foil comprises an electrically insulating main body and an electrically conductive structure provided thereon for carrying the diode. Such a power semiconductor module provides a low stray inductance and/or may be built easily.
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公开(公告)号:EP3298626B1
公开(公告)日:2019-07-03
申请号:EP16725817.7
申请日:2016-05-20
申请人: ABB Schweiz AG
发明人: TRAUB, Felix , MOHN, Fabian , SCHUDERER, Jürgen , KEARNEY, Daniel , KICIN, Slavo
IPC分类号: H01L23/538 , H01L23/64 , H01L25/07
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公开(公告)号:EP3475979A1
公开(公告)日:2019-05-01
申请号:EP17735056.8
申请日:2017-06-26
申请人: ABB Schweiz AG
IPC分类号: H01L23/473 , H05K1/02
摘要: An electronics package includes an electrically conducting support layer; at least one electrically conducting outer layer; at least two power electronics components arranged on different sides of the support layer and electrically interconnected with the support layer and with the at least one outer layer; and isolation material, in which the support layer and the at least two power electronics components are embedded, the support layer and the at least one outer layer are laminated together with the isolation material; and a cooling channel for conducting a cooling fluid through the electronics package, the cooling channel runs between the at least two power electronics components through the support layer.
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