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    POWER SEMICONDUCTOR MODULE WITH SHORT CIRCUIT FAILURE MODE
    2.
    发明公开
    POWER SEMICONDUCTOR MODULE WITH SHORT CIRCUIT FAILURE MODE 审中-公开

    公开(公告)号：EP3566246A1

    公开(公告)日：2019-11-13

    申请号：EP18704192.6

    申请日：2018-02-01

    申请人： ABB Schweiz AG

    发明人： LIU, Chunlei ,  SCHUDERER, Jürgen ,  BREM, Franziska ,  RAHIMO, Munaf ,  STEIMER, Peter Karl ,  DUGAL, Franc

    IPC分类号： H01L23/051 ,  H01L23/535 ,  H01L23/62 ,  H01L25/07 ,  H01L29/16 ,  H01L23/00

    摘要： A power semiconductor device includes a base plate; a Si chip including a Si substrate, the Si chip attached to the base plate; a first metal preform pressed with a first press pin against the Si chip; a wide bandgap material chip comprising a wide bandgap substrate and a semiconductor switch provided in the wide bandgap substrate, the wide bandgap material chip attached to the base plate; and a second metal preform pressed with a second press pin against the wide bandgap material chip; the Si chip and the wide bandgap material chip are connected in parallel via the base plate and via the first press pin and the second press pin; the first metal preform is adapted for forming a conducting path through the Si chip, when heated by an overcurrent; and the second metal preform is adapted for forming an temporary conducting path through the wide bandgap material chip or an open circuit, when heated by an overcurrent.

    COOLED ELECTRONICS PACKAGE WITH STACKED POWER ELECTRONICS COMPONENTS
    4.
    发明公开
    COOLED ELECTRONICS PACKAGE WITH STACKED POWER ELECTRONICS COMPONENTS 审中-公开

    公开(公告)号：EP3475979A1

    公开(公告)日：2019-05-01

    申请号：EP17735056.8

    申请日：2017-06-26

    申请人： ABB Schweiz AG

    发明人： KEARNEY, Daniel ,  SCHUDERER, Jürgen ,  KICIN, Slavo ,  DUARTE, Liliana

    IPC分类号： H01L23/473 ,  H05K1/02

    摘要： An electronics package includes an electrically conducting support layer; at least one electrically conducting outer layer; at least two power electronics components arranged on different sides of the support layer and electrically interconnected with the support layer and with the at least one outer layer; and isolation material, in which the support layer and the at least two power electronics components are embedded, the support layer and the at least one outer layer are laminated together with the isolation material; and a cooling channel for conducting a cooling fluid through the electronics package, the cooling channel runs between the at least two power electronics components through the support layer.

    HALF-BRIDGE MODULE WITH COAXIAL ARRANGEMENT OF THE DC TERMINALS
    6.
    发明公开
    HALF-BRIDGE MODULE WITH COAXIAL ARRANGEMENT OF THE DC TERMINALS 审中-公开

    公开(公告)号：EP3613077A1

    公开(公告)日：2020-02-26

    申请号：EP18720620.6

    申请日：2018-04-30

    申请人： ABB Schweiz AG ,  Audi AG

    发明人： MOHN, Fabian ,  TRAUB, Felix ,  SCHUDERER, Jürgen

    IPC分类号： H01L25/07 ,  H01L23/498 ,  H01L23/538

    摘要： A half-bridge module includes a substrate with a base metallization layer divided into a first DC conducting area, a second DC conducting area and an AC conducting area; at least one first power semiconductor switch chip bonded to the first DC conducting area and electrically interconnected with the AC conducting area; at least one second power semiconductor switch chip bonded to the AC conducting area and electrically interconnected with the second DC conducting area; and a coaxial terminal arrangement including at least one inner DC terminal, the at least first outer DC terminal and the at least one second outer DC terminal protrude from the module and are arranged in a row, such that the at least one inner DC terminal is coaxially arranged between the at least one first outer DC terminal and the at least one second outer DC terminal; wherein the at least one inner DC terminal is electrically connected to the second DC conducting area; the at least one first outer DC terminal and the at least one second outer DC terminal are electrically connected to the first DC conducting area; and the at least one first outer DC terminal and the at least one second outer DC terminal are electrically interconnected with an electrically conducting bridging element which is adapted for distributing at least a half of the load current between the at least one first outer DC terminal and the at least one second outer DC terminal.

    POWER SEMICONDUCTOR MODULE
    9.
    发明公开
    POWER SEMICONDUCTOR MODULE 审中-公开

    公开(公告)号：EP3298626A1

    公开(公告)日：2018-03-28

    申请号：EP16725817.7

    申请日：2016-05-20

    申请人： ABB Schweiz AG

    发明人： TRAUB, Felix ,  MOHN, Fabian ,  SCHUDERER, Jürgen ,  KEARNEY, Daniel ,  KICIN, Slavo

    IPC分类号： H01L23/538 ,  H01L23/64 ,  H01L25/07

    CPC分类号： H01L23/5385 ,  H01L23/3735 ,  H01L23/49811 ,  H01L23/645 ,  H01L25/072 ,  H01L29/00 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49111 ,  H01L2924/19107 ,  H01L2924/00014

    摘要： The present invention relates to a power semiconductor module, comprising at least two power semiconductor devices, wherein the at least two power semiconductor devices comprise at least one power semiconductor transistor and at least one power semiconductor diode, wherein at least a first substrate is provided for carrying the power semiconductor transistor in a first plane, the first plane lying parallel to the plane of the substrate, wherein the power semiconductor diode is provided in a second plane, wherein the first plane is positioned between the substrate and the second plane in a direction normal to the first plane and wherein the first plane is spaced apart from the second plane in a direction normal to the first plane. The first plane is spaced apart from the second plane in a direction normal to the first plane, whereby the first substrate is based on a direct bonded copper substrate and the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a layer of a printed circuit board is provided for carrying the diode. Alternatively, the first substrate is a direct-bonded copper substrate for carrying the transistor, on which first substrate a foil is provided for carrying the diode, wherein the foil comprises an electrically insulating main body and an electrically conductive structure provided thereon for carrying the diode. Such a power semiconductor module provides a low stray inductance and/or may be built easily.