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1.发明公开COMPOSITION AND METHOD FOR RECYCLING SEMICONDUCTOR WAFERS HAVING LOW-K DIELECTRIC MATERIALS THEREON 审中-公开组合物和方法进行回收的半导体晶片的低介电常数材料
公开(公告)号：EP1946358A4
公开(公告)日：2009-03-04
申请号：EP06850723
申请日：2006-11-09
IPC分类号： H01L21/3213 , C23F1/44
CPC分类号： C09K13/08 , H01L21/02032 , H01L21/02079 , H01L21/31111 , H01L21/32134
摘要： A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture.
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公开(公告)号：EP2094825A4
公开(公告)日：2012-03-21
申请号：EP07864023
申请日：2007-11-07
CPC分类号： C11D11/0047 , C11D3/0073 , C11D3/02 , C11D3/042 , C11D3/046 , C11D3/06 , C11D3/08 , C11D3/28 , C11D3/30 , C11D3/43 , C11D7/08 , C11D7/3209 , C11D7/3218 , C11D7/3281 , C11D7/5004 , H01L21/02074 , H01L21/02101 , H01L21/31111 , H01L27/10844
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3.发明公开COMPOSITIONS AND METHODS FOR THE REMOVAL OF PHOTORESIST FOR A WAFER REWORK APPLICATION 审中-公开组合物和方法除漆的照片，以晶圆返工
公开(公告)号：EP2082024A4
公开(公告)日：2010-11-17
申请号：EP07843089
申请日：2007-09-25
CPC分类号： C11D11/0047 , C11D1/008 , C11D3/044 , C11D3/2068 , C11D3/30 , G03F7/425
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4.发明公开REMOVAL OF HIGH-DOSE ION-IMPLANTED PHOTORESIST USING SELF-ASSEMBLED MONOLAYERS IN SOLVENT SYSTEMS 审中-公开在溶剂中的PHOTO HOCHIONENDOTIERTEM自组装膜除漆
公开(公告)号：EP1877530A4
公开(公告)日：2010-06-09
申请号：EP06749725
申请日：2006-04-10
IPC分类号： H01L21/311 , C11D1/00 , C11D1/02 , C11D1/72 , C11D3/20 , C11D3/30 , C11D3/43 , C11D3/44 , G03F7/42
CPC分类号： H01L21/31133 , B82Y30/00 , C11D3/162 , C11D3/28 , C11D3/30 , C11D3/43 , C11D7/22 , C11D7/3209 , C11D7/5004 , C11D11/0047 , G03F7/422 , G03F7/425 , H01L21/266
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