公开(公告)号：EP0839929A1

公开(公告)日：1998-05-06

申请号：EP97118103.7

申请日：1997-10-16

申请人： APPLIED MATERIALS, INC.

发明人： Raoux, Sebastian ,  Fairbairn, Kevin ,  Kelkar, Mukul ,  Cheung, David ,  Ponnekanti, Hari ,  Tanaka, Tsutomu

IPC分类号： C23C16/44

CPC分类号： H01J37/3244 ,  B01D45/06 ,  B01D53/32 ,  B01D53/46 ,  B01D2257/206 ,  B01D2259/818 ,  B01J19/08 ,  B01J19/088 ,  B01J19/126 ,  B01J19/249 ,  B01J2219/2453 ,  B01J2219/2458 ,  B01J2219/2461 ,  B01J2219/2467 ,  B01J2219/247 ,  B01J2219/2474 ,  B01J2219/2475 ,  B01J2219/2487 ,  B01J2219/2493 ,  B01J2219/2496 ,  C23C16/4405 ,  C23C16/4412 ,  H01J37/32844 ,  H01J2237/022 ,  H05H1/46 ,  H05H2001/4622 ,  H05H2001/4667 ,  H05H2245/1215 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S55/30

摘要： An apparatus for minimizing deposition in an exhaust line of a substrate processing chamber. The apparatus includes first and second members having opposing surfaces that define a fluid conduit between them. The fluid conduit includes an inlet, an outlet and a collection chamber between the inlet and the outlet. The apparatus is connected at its inlet to receive the exhaust of the substrate processing chamber, and the collection chamber is structured and arranged to collect particulate matter flowing through the fluid conduit and to inhibit egress of the particulate matter from the collection chamber. A microwave plasma generation system (450) supplies microwave energy within the fluid conduit to form a plasma from etchant gases within the fluid conduit. Constituents from the plasma react with the particulate matter collected in the collection chamber to form gaseous products that may be pumped out of the fluid conduit. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.

摘要翻译： 在向处理室基板的排气线路最小化沉积的装置。 该装置包括具有相对的表面的第一和第二成员也限定在它们之间的流体导管。 所述流体导管包括在入口到出口和在入口和出口之间的收集室。 该装置在其入口被连接成接收所述基片的处理室的排气，和收集腔室被构造和布置成收集流动通过流体管道的颗粒物质，并从收集室抑制颗粒物的出口。 的微波等离子体生成系统（450）供给所述液体导管内​​的微波能量，以形成从所述流体导管内的蚀刻剂气体的等离子体。 从血浆成分与收集在收集室中以形成气态产物并可以被泵出所述流体导管的所述颗粒物质发生反应。 该装置还可以包括对静电集电极，以增强在收集室中的颗粒收集和つweiterer抑制颗粒物的出口。

公开(公告)号：EP1039502A2

公开(公告)日：2000-09-27

申请号：EP00302146.6

申请日：2000-03-16

申请人： Applied Materials, Inc.

发明人： Tanaka, Tsutomu ,  Nowak, Thomas ,  Nguyen, Chau ,  Ponnekanti, Hari ,  Fairbairn, Kevin

IPC分类号： H01J37/32

CPC分类号： H01J37/32458 ,  H01J37/32192 ,  H01J2237/166

摘要： Apparatus for dissociating cleaning gas such as NF 3 for use in semiconductor manufacturing includes a housing enclosing a microwave resonator to which microwave energy is applied, a plasma tube within the housing and within which cleaning gas flows and is dissociated by the microwave energy. The plasma tube has two ends into and out of which the cleaning gas flows. A first and a second structural assembly thermally protects and seals each end of the plasma tube against atmospheric leaks. Each structural assembly has a metal collar and a sealing O-ring fitting tightly around a respective end of the plasma tube. Each metal collar includes a thin layer of elastomeric material of high thermal conductivity for conducting heat through the collar away from the end of the plasma tube thereby protecting the O-ring from heat damage. This permits the apparatus to operate more efficiently. A fan forces ambient air over the apparatus.

摘要翻译： 用于解离用于半导体制造的NF3等清洁气体的装置包括封装微波能量的微波谐振器的壳体，壳体内的等离子体管，清洁气体在其内流动并被微波能量解离。 等离子体管具有两个端部，其中清洁气体流入和流出。 第一和第二结构组件热保护和密封等离子体管的每个端部以抵抗大气泄漏。 每个结构组件都具有紧密等离子体管的相应末端的金属环和密封O形环。 每个金属套环包括一层高导热性的弹性材料薄层，用于将热量穿过套环远离等离子体管的端部，从而保护O形环免受热损伤。 这使得装置更有效地运行。 风扇迫使设备上的环境空气。

公开(公告)号：EP0843340A2

公开(公告)日：1998-05-20

申请号：EP97118441.1

申请日：1997-10-23

申请人： APPLIED MATERIALS, INC.

发明人： Lane, Christopher ,  Maydan, Dan ,  Colborne, Kelly ,  Sinha, Ashok ,  Ponnekanti, Hari ,  Fairbairn, Kevin ,  Taylor, W. Nick ,  Somekh, Sasson

IPC分类号： H01L21/00

CPC分类号： H01L21/67167 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/68707 ,  H01L21/68785

摘要： The present invention generally provides a cassette-to-cassette vacuum processing system which concurrently processes multiple wafers and combines the advantages of single wafer process chambers and multiple wafer handling for high quality wafer processing, high wafer throughput and reduced footprint. In accordance with one aspect of the invention, the system is preferably a staged vacuum system which generally includes a loadlock chamber for introducing wafers into the system and which also provides wafer cooling following processing, a transfer chamber for housing a wafer handler, and one or more processing chambers each having two or more processing regions which are isolatable from each other and preferably share a common gas supply and a common exhaust pump. The processing regions also preferably include separate gas distribution assemblies and RF power sources to provide a uniform plasma density over a wafer surface in each processing region. The processing chambers are configured to allow multiple, isolated processes to be performed concurrently in at least two processing regions so that at least two wafers can be processed simultaneously in a chamber with a high degree of process control provided by shared gas sources, shared exhaust systems, separate gas distribution assemblies, separate RF power sources, and separate temperature control systems.

公开(公告)号：EP1039502A3

公开(公告)日：2001-05-30

申请号：EP00302146.6

申请日：2000-03-16

申请人： Applied Materials, Inc.

发明人： Tanaka, Tsutomu ,  Nowak, Thomas ,  Nguyen, Chau ,  Ponnekanti, Hari ,  Fairbairn, Kevin

IPC分类号： H01J37/32

CPC分类号： H01J37/32458 ,  H01J37/32192 ,  H01J2237/166

摘要： Apparatus for dissociating cleaning gas such as NF 3 for use in semiconductor manufacturing includes a housing (12) enclosing a microwave resonator to which microwave energy is applied, a plasma tube within the housing and within which cleaning gas flows and is dissociated by the microwave energy. The plasma tube (16) has two ends into and out of which the cleaning gas flows. A first and a second structural assembly thermally protects and seals each end of the plasma tube against atmospheric leaks. Each structural assembly has a metal collar (44) and a sealing O-ring (46) fitting tightly around a respective end of the plasma tube. Each metal collar includes a thin layer (42) of elastomeric material of high thermal conductivity for conducting heat through the collar away from the end of the plasma tube thereby protecting the O-ring from heat damage. This permits the apparatus to operate more efficiently. A fan (22) forces ambient air over the apparatus.

公开(公告)号：EP0863536A2

公开(公告)日：1998-09-09

申请号：EP98103502.5

申请日：1998-02-27

申请人： APPLIED MATERIALS, INC.

发明人： Tsutomu, Tanaka ,  Mukul, Kelkar ,  Fairbairn, Kevin ,  Ponnekanti, Hari ,  Cheung, David

IPC分类号： H01J37/32

CPC分类号： H01J37/32862 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32357

摘要： An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.

摘要翻译： 根据具体实施例的用于提供用于有效清洁腔室的等离子体的升级CVD系统的装置和方法。 使用本发明的升级后的CVD系统也可以在基板上蚀刻或沉积层。 在具体实施方案中，本发明提供了一种易于移除的，方便处理的并且相对便宜的微波等离子体源，作为对现有CVD设备的改进或可移除的添加。 在优选实施例中，远程微波等离子体源有效地提供等离子体，而无需液体冷却等离子体施加管。 在另一个实施例中，本发明提供了一种改进的CVD装置或改进现有CVD装置，其能够产生具有在需要时有效地清洁腔室的能力的等离子体。

公开(公告)号：EP0843339B1

公开(公告)日：2003-02-12

申请号：EP97118440.3

申请日：1997-10-23

申请人： APPLIED MATERIALS, INC.

发明人： Fairbairn, Kevin ,  Taylor, Nick W. ,  Barzilai, Jessica ,  Ponnekanti, Hari

IPC分类号： H01L21/00

CPC分类号： H01L21/67167 ,  C23C16/4412 ,  C23C16/54 ,  H01L21/67017 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201

公开(公告)号：EP0839929B1

公开(公告)日：2002-04-24

申请号：EP97118103.7

申请日：1997-10-16

申请人： APPLIED MATERIALS, INC.

发明人： Raoux, Sebastian ,  Fairbairn, Kevin ,  Kelkar, Mukul ,  Cheung, David ,  Ponnekanti, Hari ,  Tanaka, Tsutomu

IPC分类号： C23C16/44

CPC分类号： H01J37/3244 ,  B01D45/06 ,  B01D53/32 ,  B01D53/46 ,  B01D2257/206 ,  B01D2259/818 ,  B01J19/08 ,  B01J19/088 ,  B01J19/126 ,  B01J19/249 ,  B01J2219/2453 ,  B01J2219/2458 ,  B01J2219/2461 ,  B01J2219/2467 ,  B01J2219/247 ,  B01J2219/2474 ,  B01J2219/2475 ,  B01J2219/2487 ,  B01J2219/2493 ,  B01J2219/2496 ,  C23C16/4405 ,  C23C16/4412 ,  H01J37/32844 ,  H01J2237/022 ,  H05H1/46 ,  H05H2001/4622 ,  H05H2001/4667 ,  H05H2245/1215 ,  Y02C20/30 ,  Y02P70/605 ,  Y10S55/30

公开(公告)号：EP0863536A3

公开(公告)日：2000-11-02

申请号：EP98103502.5

申请日：1998-02-27

申请人： APPLIED MATERIALS, INC.

发明人： Tsutomu, Tanaka ,  Mukul, Kelkar ,  Fairbairn, Kevin ,  Ponnekanti, Hari ,  Cheung, David

IPC分类号： H01J37/32

CPC分类号： H01J37/32862 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32192 ,  H01J37/32357

摘要： An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.

公开(公告)号：EP0843340A3

公开(公告)日：1999-02-17

申请号：EP97118441.1

申请日：1997-10-23

申请人： APPLIED MATERIALS, INC.

发明人： Lane, Christopher ,  Maydan, Dan ,  Colborne, Kelly ,  Sinha, Ashok ,  Ponnekanti, Hari ,  Fairbairn, Kevin ,  Taylor, W. Nick ,  Somekh, Sasson

IPC分类号： H01L21/00

CPC分类号： H01L21/67167 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/68707 ,  H01L21/68785

摘要： The present invention generally provides a cassette-to-cassette vacuum processing system which concurrently processes multiple wafers and combines the advantages of single wafer process chambers and multiple wafer handling for high quality wafer processing, high wafer throughput and reduced footprint. In accordance with one aspect of the invention, the system is preferably a staged vacuum system which generally includes a loadlock chamber for introducing wafers into the system and which also provides wafer cooling following processing, a transfer chamber for housing a wafer handler, and one or more processing chambers each having two or more processing regions which are isolatable from each other and preferably share a common gas supply and a common exhaust pump. The processing regions also preferably include separate gas distribution assemblies and RF power sources to provide a uniform plasma density over a wafer surface in each processing region. The processing chambers are configured to allow multiple, isolated processes to be performed concurrently in at least two processing regions so that at least two wafers can be processed simultaneously in a chamber with a high degree of process control provided by shared gas sources, shared exhaust systems, separate gas distribution assemblies, separate RF power sources, and separate temperature control systems.

摘要翻译： 本发明通常提供了一种盒式至盒式真空处理系统，其同时处理多个晶片，并结合了单晶圆处理室和多晶圆处理的优点，用于高质量晶圆处理，高晶圆生产量和减小的占地面积。 根据本发明的一个方面，该系统优选地是分级真空系统，其通常包括用于将晶片引入系统中并且还提供后续处理的晶片冷却的负载锁定室，用于容纳晶片处理器的传送室，以及一个或 更多的处理室各自具有彼此隔离的两个或更多个处理区域，并且优选地共享公共气体供应源和公共排气泵。 处理区域还优选地包括单独的气体分配组件和RF功率源，以在每个处理区域中的晶片表面上提供均匀的等离子体密度。 处理室被配置为允许在至少两个处理区域中同时执行多个隔离的过程，使得可以在具有由共享气体源，共用排气系统提供的高程度过程控制的室中同时处理至少两个晶片 ，独立的气体分配组件，独立的射频电源和独立的温度控制系统。

公开(公告)号：EP1039502B1

公开(公告)日：2008-04-23

申请号：EP00302146.6

申请日：2000-03-16

申请人： APPLIED MATERIALS, INC.

发明人： Tanaka, Tsutomu ,  Nowak, Thomas ,  Nguyen, Chau ,  Ponnekanti, Hari ,  Fairbairn, Kevin

IPC分类号： H01J37/32

CPC分类号： H01J37/32458 ,  H01J37/32192 ,  H01J2237/166