公开(公告)号：EP1694885A2

公开(公告)日：2006-08-30

申请号：EP04760000.2

申请日：2004-04-16

申请人： APPLIED MATERIALS, INC. ,  Ellwanger, Russell C.

发明人： YANG, Michael, X. ,  XI, Ming ,  BRITCHER, Eric, B. ,  DONOSO, Bernardo ,  PANG, Lily, L. ,  SHERMAN, Svetlana ,  HO, Henry ,  NGUYEN, Anh, N. ,  LERNER, Alexander, N. ,  D'AMBRA, Allen, L. ,  SHANMUGASUNDRAM, Arulkumar ,  ISHIKAWA, Tetsuya ,  RABINOVICH, Yevgeniy ,  LUBOMIRSKY, Dmitry ,  MOK, Yeuk-Fai, Edwin ,  NGUYEN, Son, T.

IPC分类号： C25D1/00

CPC分类号： H01L21/67167 ,  B08B3/02 ,  C25D5/003 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D21/02 ,  C25D21/08 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/6723 ,  H01L21/68 ,  H01L21/6838 ,  H01L21/68707

摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

公开(公告)号：EP1186005A1

公开(公告)日：2002-03-13

申请号：EP00936092.6

申请日：2000-05-19

申请人： Applied Materials, Inc.

发明人： CHEN, Aihua Steven ,  HO, Henry ,  YANG, Michael, X. ,  PEUSE, Bruce, W. ,  LITTAU, Karl ,  CHANG, Yu

IPC分类号： H01L21/00

CPC分类号： H01L21/67103

摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

公开(公告)号：EP1459369A2

公开(公告)日：2004-09-22

申请号：EP02792404.2

申请日：2002-12-17

申请人： Applied Materials, Inc.

发明人： CHUNG, Hua ,  CHEN, Ling ,  KU, Vincent, W. ,  YANG, Michael, X. ,  YAO, Gongda

IPC分类号： H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/76843 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28562 ,  H01L21/76844

摘要： A method to selectively deposit a barrier layer on dielectric material that surrounds one or more metal interconnects on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the dielectric material formed on the substrate in a process chamber.

公开(公告)号：EP1204783A1

公开(公告)日：2002-05-15

申请号：EP00957994.7

申请日：2000-07-10

申请人： Applied Materials, Inc.

发明人： YANG, Michael, X. ,  KAO, Chien-Teh ,  LITTAU, Karl ,  CHEN, Steven, A. ,  HO, Henry ,  YU, Ying

IPC分类号： C23C16/34 ,  C23C16/44

CPC分类号： C23C16/4412 ,  C23C16/345

摘要： The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semicondutor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.