公开(公告)号：EP1694885A2

公开(公告)日：2006-08-30

申请号：EP04760000.2

申请日：2004-04-16

申请人： APPLIED MATERIALS, INC. ,  Ellwanger, Russell C.

发明人： YANG, Michael, X. ,  XI, Ming ,  BRITCHER, Eric, B. ,  DONOSO, Bernardo ,  PANG, Lily, L. ,  SHERMAN, Svetlana ,  HO, Henry ,  NGUYEN, Anh, N. ,  LERNER, Alexander, N. ,  D'AMBRA, Allen, L. ,  SHANMUGASUNDRAM, Arulkumar ,  ISHIKAWA, Tetsuya ,  RABINOVICH, Yevgeniy ,  LUBOMIRSKY, Dmitry ,  MOK, Yeuk-Fai, Edwin ,  NGUYEN, Son, T.

IPC分类号： C25D1/00

CPC分类号： H01L21/67167 ,  B08B3/02 ,  C25D5/003 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D21/02 ,  C25D21/08 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/6723 ,  H01L21/68 ,  H01L21/6838 ,  H01L21/68707

摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

公开(公告)号：EP1676295A2

公开(公告)日：2006-07-05

申请号：EP04794284.2

申请日：2004-10-05

申请人： APPLIED MATERIALS, INC.

发明人： PANCHAM , Ian, A. ,  NGUYEN, Son, T. ,  ROSEN, Gary, J.

IPC分类号： H01L21/00 ,  C23C16/458 ,  C23C18/16

CPC分类号： H01L21/67167 ,  C23C18/1628 ,  C23C18/163 ,  C23C18/1678 ,  C23C18/168 ,  H01L21/288 ,  H01L21/67109 ,  H01L21/6723

摘要： A method and apparatus for controlling a substrate temperature during an electroless deposition process. The apparatus includes a deposition cell configured to support a substrate at a position above a fluid distribution member. A heated fluid is dispensed from the fluid diffusion member and contacts the backside of the substrate, thus heating the substrate. The heated fluid is dispensed from apertures configured to maintain a constant temperature across the substrate surface. The method includes flowing a heated fluid through a diffusion member against a backside of the substrate in a configuration that is configured to generate a constant processing temperature across the front side of the substrate.

公开(公告)号：EP2425463A2

公开(公告)日：2012-03-07

申请号：EP10772533.5

申请日：2010-04-27

申请人： Applied Materials, Inc.

发明人： NIJHAWAN, Sandeep ,  BURROWS, Brian, H. ,  ISHIKAWA, Tetsuya ,  KRYLIOUK, Olga ,  VASUDEV, Anand ,  SU, Jie ,  QUACH, David, H. ,  CHANG, Anzhong ,  MELNIK, Yuriy ,  RATIA, Harsukhdeep, S. ,  NGUYEN, Son, T. ,  PANG, Lily

IPC分类号： H01L33/00

CPC分类号： H01L21/67109 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67115 ,  H01L21/67167 ,  H01L21/67207 ,  H01L33/007

摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.