摘要:
A resist composition containing a polymer of t-butyl cinnamate, a photacid generator, and a solvent. Optionally, the resist composition may include a basic compound. The polymer of t-butyl cinnamate has the monomeric units (I) wherein a=0.3 to 0.9, b=0.1 to 0.7, and c=0 to 0.3; R =H, methyl, or CH2OR ; R =H or C1-C4 alkyl group; R =H, methyl, CH2OR , CH2CN, or CH2X; X=Cl, I, Br, F, or CH2COOR ; R =C1-C4 alkyl group; and R = isobornyl, cyclohexyl methyl, cyclohexyl ethyl, benzyl, or phenethyl.
摘要:
A photosensitive compound comprising at least one o-quinonediazide sulfonic acid ester of a phenolic compound, said esters selected from the group consisting of formula (II), wherein the photosensitive compound is used in a radiation sensitive composition and a process for forming a positive patterned image.
摘要:
A non corrosive cleaning composition that is aqueous-based, non-hazardous and will not harm the environment and is useful primarily for removing both fresh and aged plasma etch residues from a substrate. The composition comprises (a) water, and (b) a synergistic combination of at least one tricaboxylic acid and at least one caraboxylic acid. Preferably, the at least one carboxylic acid has a eKa value ranging from 3 to 6. A method for removing etch residues from a substrate. The method includes the steps of (a) providing a substrate with etch residue, and (b) contacting the substrate with a cleaning composition comprising water, and a synergistic combination of at least one tricaboxylic acid and at least one carboxylic acid.
摘要:
A photoacid compound having general structure: R-O(CF2)nSO3X wherein n is an integer between about 1 to 4; R is selected from the group consisting of: substituted or unsubstituted C1-C12 linear or branched alkyl or alkenyl, substituted or unsubstituted araalkyl, substituted or unsubstituted aryl, substituted or unsubstituted bicycloalkyl, substituted or unsubstituted tricycloalkyl, hydrogen, alkyl sulfonic acid, substituted or unsubstituted perfluoroalkyl, the general structure F((CF2)pO)m(CF2)q- wherein p is between about 1 to 4, m is between about 0 to 3 and q is between about 1 to 4, and substituted or unsubstituted partially fluorinated alkyl, halofluoroalkyl, perfluoroalkylsulfonic, or glycidyl; and X is selected from the group consisting of: organic cations and covalently bonded organic radicals.
摘要:
The present invention provides a process for generating mixed acetal polymers by reacting a hydroxyl containing polymer or monomer with vinyl ether and alcohol in the presence of an acid catalyst. The process of this invention provides a new class of polymers based on mixed acetals which are prepared in situ with one reaction. The mixed acetal polymers are inexpensive to synthesize and readily reproducible. The resulting mixed acetal polymer is blended with a photoacid generator and dissolved in a solvent to produce a chemically amplified resist composition. A process for forming a pattern comprises the steps of providing the chemically amplified resist composition, quoting a substrate with the resist composition, imagewise exposing the resist coated substrate to actinic radiation, and forming a resist image by developing the resist coated substrate.