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10 条记录 (耗时 0.013 秒)

    Improved low mass wafer support system
    1.
    发明公开
    Improved low mass wafer support system 审中-公开
    Verbesserte kleinmassige Waferhaleeinrichtung

    公开(公告)号：EP1308989A2

    公开(公告)日：2003-05-07

    申请号：EP03000919.5

    申请日：1998-11-02

    申请人： ASM America, Inc.

    发明人： Goodman, Matthew B. ,  Raaijmakers, Ivo ,  Jacobs, Loren R. ,  Van Bilsen, Franciscus B. ,  Meyer, Michael J. ,  Barrett, Eric Alan

    IPC分类号： H01L21/00

    CPC分类号： H01L21/68735 ,  C23C16/4581 ,  C23C16/4585

    摘要： Improvements in the design of a low mass wafer holder are disclosed. The improvements include the use of peripherally located, integral lips to space a wafer or other substrate above the base plate of the wafer holder. A uniform gap is thus provided between the wafer and the base plate, such as will temper rapid heat exchanges, allow gas to flow between the wafer and wafer holder during wafer pick-up, and keep the wafer holder thermally coupled with the wafer. At the same time, thermal disturbance from lip contact with the wafer is reduced. Gas flow during pick-up can be provided through radial channels in a wafer holder upper surface, or through backside gas passages. A thicker ring is provided at the wafer holder perimeter, and is provided in some embodiments as an independent piece to accommodate stresses accompanying thermal gradients. A self-centering mechanism is provided to keep the wafer holder centered relative to a spider which is subject to differential thermal expansion.

    摘要翻译： 公开了一种低质量晶片支架的设计改进。 这些改进包括使用外围定位的整体式唇缘来将晶片或其它基板放置在晶片保持器的基板之上。 因此，在晶片和基板之间提供均匀的间隙，例如将快速热交换，允许气体在晶片拾取期间在晶片和晶片保持器之间流动，并且保持晶片保持器与晶片热耦合。 同时，与晶片的唇接触的热干扰降低。 拾取期间的气流可以通过晶片保持器上表面中的径向通道或通过背侧气体通道来提供。 在晶片保持器周边提供更厚的环，并且在一些实施例中被提供为独立的部件以适应伴随热梯度的应力。 提供自对中机构以保持晶片保持器相对于经受不同热膨胀的蜘蛛座居中。

    Improved low mass wafer support system
    7.
    发明公开
    Improved low mass wafer support system 审中-公开
    改进小块状的Waferhaleeinrichtung

    公开(公告)号：EP1308989A3

    公开(公告)日：2007-12-26

    申请号：EP03000919.5

    申请日：1998-11-02

    申请人： ASM America, Inc.

    发明人： Goodman, Matthew B. ,  Raaijmakers, Ivo ,  Jacobs, Loren R. ,  Van Bilsen, Franciscus B. ,  Meyer, Michael J. ,  Barrett, Eric Alan

    IPC分类号： H01L21/00

    CPC分类号： H01L21/68735 ,  C23C16/4581 ,  C23C16/4585

    摘要： Improvements in the design of a low mass wafer holder are disclosed. The improvements include the use of peripherally located, integral lips to space a wafer or other substrate above the base plate of the wafer holder. A uniform gap is thus provided between the wafer and the base plate, such as will temper rapid heat exchanges, allow gas to flow between the wafer and wafer holder during wafer pick-up, and keep the wafer holder thermally coupled with the wafer. At the same time, thermal disturbance from lip contact with the wafer is reduced. Gas flow during pick-up can be provided through radial channels in a wafer holder upper surface, or through backside gas passages. A thicker ring is provided at the wafer holder perimeter, and is provided in some embodiments as an independent piece to accommodate stresses accompanying thermal gradients. A self-centering mechanism is provided to keep the wafer holder centered relative to a spider which is subject to differential thermal expansion.

    Process chamber with inner support
    9.
    发明公开
    Process chamber with inner support 失效
    与内部支持的处理室

    公开(公告)号：EP1036860A3

    公开(公告)日：2000-12-06

    申请号：EP00202096.4

    申请日：1996-08-01

    申请人： ASM America, Inc.

    发明人： Wengert, John F. ,  Jacobs, Loren R. ,  Halpin, Michael W. ,  Foster, Derrick W. ,  van der Jeugd, Cornelis A. ,  Vyne, Robert M. ,  Hawkins, Mark R.

    IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/48 ,  B01J3/00 ,  C23C16/455

    CPC分类号： B01J3/006 ,  C23C16/44 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/46 ,  C23C16/481 ,  H01L21/67115 ,  H01L21/68735 ,  H01L21/68785

    摘要： There is provided a chemical vapor deposition apparatus comprising a structure defining a chamber having an area for horizontal positioning of a substrate, and having chamber walls for conducting a flow of gas across a surface of the substrate, said chamber having a gas inlet extending generally laterally across the width of the chamber structure; and a gas injector abutting the chamber structure adjacent said inlet, and including a plurality of gas supply passages, a gas inlet manifold connected to each of said passages, a separately adjustable metering valve apportioning flow through each of said passages, each of said passages having an outlet portion configured to cause the gas flow through the passage to diverge laterally into an expanded gas stream separated from adjacent streams, said injector further including walls that direct the gas streams into generally flat in edge-to-edge relation towards said chamber gas inlet, said chamber inlet being without partitions dividing the streams so that an edge of any one stream can mix with an edge of an adjacent stream.

    摘要翻译： 提供了一种化学气相沉积装置，其包括限定腔室的结构，所述腔室具有用于基底的水平定位的区域，并且具有用于引导气体流过基底表面的腔室壁，所述腔室具有通常横向延伸的气体入口 横跨腔室结构的宽度; 以及气体喷射器，所述气体喷射器邻近所述入口邻接所述腔室结构并且包括多个气体供应通道，连接到每个所述通道的气体入口歧管，分别可调节的计量阀，分配流量通过每个所述通道，每个所述通道具有 出口部分，所述出口部分被配置为使通过所述通道的气流横向地发散成与相邻流分离的膨胀气流，所述喷射器进一步包括壁，所述壁将所述气流朝向所述腔室气体入口以大致平直的边缘对边缘关系 ，所述室入口没有划分所述流的隔板，使得任何一个流的边缘可以与相邻流的边缘混合。