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    Laser media with controlled concentration profile of active laser ions
    1.
    发明授权
    Laser media with controlled concentration profile of active laser ions 有权

    公开(公告)号：EP2226908B1

    公开(公告)日：2018-11-28

    申请号：EP10152950.1

    申请日：2010-02-08

    申请人： Raytheon Company

    发明人： Kirby, Kevin W. ,  Sumida, David S.

    IPC分类号： H01S3/08 ,  H01S3/06 ,  C30B29/28 ,  C30B31/08 ,  C30B31/18 ,  H01S3/16

    CPC分类号： H01S3/0617 ,  C30B29/28 ,  C30B31/08 ,  C30B31/18 ,  H01S3/061 ,  H01S3/08045 ,  H01S3/1618 ,  H01S3/1643

    摘要： A laser medium comprises a solid-state host material (12) and dopant species (14) provided within the solid-state host material (12). A first portion of the dopant species (14a) has a first valence state, and a second portion (14b) of the dopant species has a second valence state. In an embodiment, a concentration of the first portion (14a) of the dopant species decreases radially with increasing distance from a center of the medium, and a concentration of the second portion (14b) of the dopant species increases radially with increasing distance from the center (A) of the medium. The laser medium (12) further comprises impurities within the solid-state host material, the impurities converting the first portion of the dopant species having the first valence state into the second portion of dopant species having the second valence state. For example, a Yb:YAG laser crystal may be treated by hot water, resulting in converting part of the laser active Yb 3+ ions into laser inactive Yb 2+ ions. The transverse laser active ion dopant profile results in promoting only one transverse mode in the laser resonator without an aperture.

    Heating system and method for heating an atmospheric reactor
    2.
    发明公开
    Heating system and method for heating an atmospheric reactor 有权
    黑社会与邪恶者

    公开(公告)号：EP1256973A1

    公开(公告)日：2002-11-13

    申请号：EP01109164.2

    申请日：2001-04-12

    申请人： Infineon Technologies SC300 GmbH & Co. KG ,  ASML Netherlands B.V.

    发明人： Bernhardt, Henry ,  Stadtmueller, Michael ,  Seidemann, Thomas

    IPC分类号： H01L21/00 ,  C30B31/18 ,  C23C16/46

    CPC分类号： H01L21/67109 ,  C23C16/46 ,  C30B25/10 ,  C30B33/005

    摘要： The present invention relates to a heating system and a method for heating a deposition reactor or an oxidation reactor which is particularly suited for low pressure chemical vapour deposition or oxidation.
    The present invention provides a heating system for heating the reactor in which a plurality of wafers is held perpendicularly to the reactant gas flowing direction which is parallel to the longitudinal axis of the reactor, so as to enable a deposition or oxidation reaction, wherein said heating system is adapted to change the reactor temperature during the process. Further the invention provides a method for heating a reactor in which a plurality of wafers is held perpendicularly to the reactant gas flowing direction, so as to enable a reaction, wherein the reactor temperature is changed during the process. Prefereably, each of a plurality of reactor zones, into which the reactor is divided in a direction parallel to the reactant gas flowing direction, is heated at a different temperature profile indicating the temperature of this specific zone versus time. Thereby, the in plane uniformity of deposited or oxidized layers can be largely improved.

    摘要翻译： 本发明涉及一种用于加热特别适用于低压化学气相沉积或氧化的沉积反应器或氧化反应器的加热系统和方法。 本发明提供一种用于加热反应器的加热系统，其中多个晶片垂直于平行于反应器的纵向轴线的反应物气体流动方向保持，以便能够进行沉积或氧化反应，其中所述加热 系统适于在该过程期间改变反应器温度。 此外，本发明提供一种用于加热其中多个晶片垂直于反应物气体流动方向保持的反应器的方法，以便能够进行反应，其中反应器温度在该过程中改变。 优选地，将反应器沿平行于反应物气体流动方向的方向分割的多个反应器区域中的每一个以不同的温度分布被加热，该温度曲线指示该特定区域的温度与时间的关系。 由此，能够大幅提高沉积层或氧化层的面内均匀性。

    Furnace sidewall temperature control system
    5.
    发明公开
    Furnace sidewall temperature control system 失效
    Anlage zur Temperaturreglung derSeitenwändeeines Ofens

    公开(公告)号：EP0884406A1

    公开(公告)日：1998-12-16

    申请号：EP98304348.0

    申请日：1998-06-02

    申请人： EATON CORPORATION

    发明人： Lecouras, George Thomas ,  Rodier, Dennis Paul

    IPC分类号： C30B31/12 ,  C30B31/18

    CPC分类号： H01L21/67115 ,  C30B25/10 ,  C30B31/12

    摘要： A vertical rapid thermal processing (RTP) system (10) is provided, comprising a vertical process chamber (20) extending along a longitudinal axis (X), and a movable platform (32) disposed within the process chamber and having a support surface upon which one or more substrates such as semiconductor wafers (W) may be mounted for processing. A temperature control subsystem (56, 58, 60) establishes a continuous temperature gradient within the vertical process chamber along the longitudinal axis. The temperature control subsystem comprises a plurality of chamber sidewall heating elements (24) located at different vertical positions along the longitudinal axis. Each of the plurality of heating elements is controlled independently of the other of the plurality of heating elements. The plurality of longitudinally oriented heating elements provides an active sidewall heating mechanism which results in a consistent and continuous temperature gradient within the chamber, independent of the position of the wafer within the chamber or the number of wafers which have been processed.

    摘要翻译： 提供了垂直快速热处理（RTP）系统（10），其包括沿着纵向轴线（X）延伸的垂直处理室（20）和设置在处理室内并具有支撑表面的可移动平台（32） 可以安装一个或多个基板，例如半导体晶片（W）用于处理。 温度控制子系统（56,58,60）沿着纵向轴线在垂直处理室内建立连续的温度梯度。 温度控制子系统包括沿着纵向轴线位于不同垂直位置的多个室侧壁加热元件（24）。 多个加热元件中的每一个独立于多个加热元件中的另一个被加以控制。 多个纵向取向的加热元件提供主动侧壁加热机构，其导致腔室内的一致且连续的温度梯度，而与腔室内的晶片位置或已经被处理的晶片数量无关。

    A method of monitoring a process of growing a film of silicon dioxide doped with phosphorus
    6.
    发明公开
    A method of monitoring a process of growing a film of silicon dioxide doped with phosphorus 失效
    用于监视用于生产磷掺杂二氧化硅层的方法。

    公开(公告)号：EP0414562A2

    公开(公告)日：1991-02-27

    申请号：EP90309320.1

    申请日：1990-08-24

    申请人： MICRONAS INC.

    发明人： Tammenmaa, Markku

    IPC分类号： G01N23/223 ,  C30B31/18

    CPC分类号： G01N23/223 ,  C23C16/52 ,  G01N2223/076

    摘要： The invention relates to a method of monitoring a process of growing a thin film of silicon di­oxide doped with phosphorus, comprising growing a sample thin film by the growing process to be monitored on the surface of a substrate; and determining the relative phosphorus concentra­tion of the thin film. In the present invention, to enable simpler determination of phosphorus concentration more rapidly and more accurately than previously, the sample thin film is grown on a substrate made of a material containing no silicon, whereby it is possible to measure the intensity of the fluorescent radiation of both phosphorus and silicon separately by an X-ray fluorescence method and to determine the propor­tional amount of phosphorus in the thin film as the ratio of the measured intensities. The method is calibrated by preparing standard films having equal phosphorus/silicon ratios on the same substrate material.

    摘要翻译： 本发明涉及监测生长掺杂有磷的二氧化硅薄膜，其包括由生长工艺生长薄膜样品基板的表面上的要被监视的过程的方法; 和确定性采矿薄膜的相对的磷浓度。 在本发明中，为了能够简单地确定磷浓度的更快速和更精确地设置为比在此之前，样品薄膜上生长不含硅的材料制成的基片，由此能够测量的荧光辐射的强度 两个磷和硅分别由在X射线荧光方法和确定性矿磷的薄膜作为所测量的强度的比率的比例量。 该方法是通过制备具有在同一基板材料等于磷/硅比标准膜校准。

    THERMAL REACTOR OPTIMIZATION
    10.
    发明公开
    THERMAL REACTOR OPTIMIZATION 失效
    优化热反应器

    公开(公告)号：EP0789981A4

    公开(公告)日：2000-03-15

    申请号：EP95937441

    申请日：1995-10-17

    申请人： VOYAN TECHNOLOGY

    发明人： SHAH SUNIL C ,  PANDEY PRADEEP

    IPC分类号： C23C16/52 ,  H01L21/00 ,  H05B1/02 ,  C23C14/54 ,  C30B25/16 ,  C30B31/18

    CPC分类号： H01L21/67248 ,  C23C16/52

    摘要： A system for controlling a thermal reactor (10) is disclosed that characterizes the thermal reactor (10) with a reactor model that indicates behavior of the thermal reactor (10) and of a load (12) contained in the thermal reactor (10) and that accounts for interaction among a set of heating zones of the thermal reactor (10). An online reactor model (30) is then determined that estimates the thermal behavior of the load (12) based upon an online input power to the thermal reactor (10) and upon an online temperature indication from the thermal reactor (10). A time varying temperature and reactant flow recipe is determined that minimizes end of run parameters on the load (12). A multi-variable controller (32) is employed to minimize temperature deviations of the load (12) from a predetermined temperature recipe or time varying trajectory.