公开(公告)号：EP3731410A1

公开(公告)日：2020-10-28

申请号：EP20180247.7

申请日：2017-07-18

申请人： Ampleon Netherlands B.V.

发明人： De Boet, Johannes Adrianus Maria ,  Sveshtarov, Iordan Konstantinov ,  Van Rijs, Freerk

IPC分类号： H03F1/56 ,  H03F3/189 ,  H03F3/24 ,  H03H7/01 ,  H01L23/00

摘要： The present invention relates to a radiofrequency (RF) power transistor package. It further relates to a mobile telecommunications base station comprising such a RF power transistor package, and to an integrated passive die suitable for an RF power amplifier package.
According to the present invention, an in-package impedance network is used that is connected to the output of the RF power transistor arranged inside the package. This network comprises a first inductive element having a first and second terminal, the first terminal being electrically connected to the output of the RF transistor, a resonance unit being electrically connected to second terminal of the first inductive element, and a second capacitive element electrically connected in between the resonance unit and ground.
According to the present invention, the first capacitive element is arranged in series with the second capacitive element.

公开(公告)号：EP3273596A1

公开(公告)日：2018-01-24

申请号：EP17181815.6

申请日：2017-07-18

申请人： Ampleon Netherlands B.V.

发明人： De Boet, Johannes Adrianus Maria ,  Sveshtarov, Iordan Konstantinov ,  Van Rijs, Freerk

IPC分类号： H03F1/56 ,  H03F3/189 ,  H03F3/24 ,  H03H7/01

CPC分类号： H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2224/48137 ,  H01L2224/49176 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/13091 ,  H01L2924/19011 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19051 ,  H01L2924/19105 ,  H03F1/0288 ,  H03F1/3205 ,  H03F1/565 ,  H03F3/189 ,  H03F3/195 ,  H03F3/245 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/399 ,  H03F2200/451 ,  H03H7/1791 ,  H03H7/38

摘要： The present invention relates to a radiofrequency (RF) power transistor package. It further relates to a mobile telecommunications base station comprising such a RF power transistor package, and to an integrated passive die suitable for an RF power amplifier package.
According to the present invention, an in-package impedance network is used that is connected to the output of the RF power transistor arranged inside the package. This network comprises a first inductive element having a first and second terminal, the first terminal being electrically connected to the output of the RF transistor, a resonance unit being electrically connected to second terminal of the first inductive element, and a second capacitive element electrically connected in between the resonance unit and ground.
According to the present invention, the first capacitive element is arranged in series with the second capacitive element.

摘要翻译： 射频（RF）功率晶体管封装技术领域本发明涉及射频（RF）功率晶体管封装。 本发明还涉及包括这种RF功率晶体管封装的移动电信基站以及适用于RF功率放大器封装的集成无源管芯。 根据本发明，使用连接到布置在封装内的RF功率晶体管的输出的封装内阻抗网络。 该网络包括具有第一和第二端子的第一电感元件，第一端子电连接到RF晶体管的输出，谐振单元电连接到第一电感元件的第二端子，以及第二电容元件电连接 在谐振单元和地之间。 根据本发明，第一电容元件与第二电容元件串联布置。