公开(公告)号：EP3375091A1

公开(公告)日：2018-09-19

申请号：EP16801906.5

申请日：2016-11-02

申请人： IQE Plc.

发明人： PELZEL, Rodney ,  DARGIS, Rytis ,  CLARK, Andrew ,  WILLIAMS, Howard ,  CHIN, Patrick ,  LEBBY, Michael

IPC分类号： H03H3/02 ,  H03H3/08 ,  H03H9/17 ,  H01L41/08 ,  H01L41/083 ,  H01L41/319

CPC分类号： H03H1/0007 ,  H01L23/66 ,  H01L27/0688 ,  H01L29/66242 ,  H01L29/66431 ,  H01L29/737 ,  H01L29/778 ,  H01L41/0815 ,  H01L41/083 ,  H01L41/319 ,  H01L2223/6672 ,  H03H3/02 ,  H03H3/08 ,  H03H9/175 ,  H03H2001/0064 ,  H03H2001/0085 ,  H03H2003/025

摘要： Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).

公开(公告)号：EP3343761A1

公开(公告)日：2018-07-04

申请号：EP17198632.6

申请日：2017-10-26

申请人： NXP USA, Inc.

发明人： MANGAONKAR, Sai Sunil ,  USCOLA, Ricardo

IPC分类号： H03F1/02 ,  H01L23/66 ,  H03F1/56 ,  H03F3/189 ,  H03F3/20

CPC分类号： H03F1/565 ,  H01L23/66 ,  H01L2223/6611 ,  H01L2223/6672 ,  H03F3/189 ,  H03F3/195 ,  H03F3/20 ,  H03F3/213 ,  H03F2200/222 ,  H03F2200/225 ,  H03F2200/387 ,  H03F2200/451

摘要： A packaged RF amplifier device includes a transistor, a first input circuit, and a second input circuit. The first input circuit includes a first series inductance coupled between an input lead and a first node, a second series inductance coupled between the first node and the transistor's control terminal, and a first shunt capacitance coupled between the first node and a ground reference. The second input circuit includes a first shunt inductance and a second shunt capacitance coupled in series between the input lead and the ground reference. The first input circuit and the second input circuit create a fundamental frequency match for the device. The second series inductance and the first shunt capacitance present a short circuit to the ground reference for RF energy at a second harmonic frequency.

公开(公告)号：EP3314619A1

公开(公告)日：2018-05-02

申请号：EP16733430.9

申请日：2016-06-24

申请人： Thales ,  Université de Bordeaux ,  Institut Polytechnique de Bordeaux ,  Centre National de la Recherche Scientifique

发明人： DUPUY, Victor ,  MALLET-GUY, Benoît ,  MANCUSO, Yves ,  KERHERVE, Eric

IPC分类号： H01F17/00 ,  H01F27/28

CPC分类号： H01L23/5227 ,  H01F17/0006 ,  H01F17/0013 ,  H01F27/2804 ,  H01F2027/2809 ,  H01L23/66 ,  H01L2223/6672 ,  H01P5/12 ,  H01P5/181

摘要： This transformer includes primary and secondary tracks (10, 20) that are coupled to one another by mutual inductance, the primary and secondary tracks being superposed on top of each other in two parallel planes while being arranged to follow the same contour (C), the plane of the primary track corresponding to the main conductive layer of the circuit, which layer is deposited on a substrate (30), and the secondary track being supported, plumb with the primary tract, by supporting means including small walls (41-46; 51-56), each small wall abutting directly against the substrate and against a lower surface (24) of the secondary track (20), and having a length (L) larger than a width (I), and having a height allowing a preset interval to be created between an upper surface (14) of the primary track (10) and the lower surface (24) of the secondary track (20).

公开(公告)号：EP2681765A2

公开(公告)日：2014-01-08

申请号：EP12752146.6

申请日：2012-02-29

申请人： Skyworks Solutions, Inc.

发明人： SUN, Weimin ,  ZAMPARDI, JR., Peter, Joseph ,  SHAO, Hongxiao

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L24/49 ,  H01L23/49838 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2223/6611 ,  H01L2223/6672 ,  H01L2224/04042 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48599 ,  H01L2224/48611 ,  H01L2224/48616 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/49111 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00011

摘要： To reduce the radio frequency (RF) losses associated with high RF loss plating, such as, for example, Nickel/Palladium/Gold (Ni/Pd/Au) plating, the solder mask can be reconfigured to prevent the edges and sidewalls of the wire-bond areas from being plated in some embodiments. Leaving the edges and sidewalls of the wire-bond areas free from high RF loss plating, such as Ni/Pd/Au plating, provides a path for the RF current to flow around the high resistivity material, which reduces the RF signal loss associated with the high resistivity plating material. Also, to reduce the RF losses associated with high RF loss plating, such as, for example, Ni/Pd/Au plating, an on-die passive device, such as a capacitor, resistor, or inductor, associated with a radio frequency integrated circuit (RFIC) can be placed in an RF upper signal path with respect to the RF signal output of the RFIC. By placing the on-die passive device in the RF upper signal path, the RF current does not directly pass through the high RF loss plating material of the passive device bonding pad.

公开(公告)号：EP3403278A1

公开(公告)日：2018-11-21

申请号：EP16819739.0

申请日：2016-11-29

申请人： Qualcomm Incorporated

发明人： GU, Shiqun ,  ZUO, Chengjie ,  FANELLI, Steve ,  GEE, Thomas ,  SONG, Young Kyu

IPC分类号： H01L23/66 ,  H01L21/768 ,  H01L23/522 ,  H01L49/02

CPC分类号： H04B1/48 ,  H01L21/76251 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/481 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/60 ,  H01L23/66 ,  H01L27/1203 ,  H01L28/00 ,  H01L28/10 ,  H01L28/60 ,  H01L29/0649 ,  H01L2223/6672 ,  H01L2223/6677

摘要： An integrated radio frequency (RF) circuit structure may include a resistive substrate material and a switch. The switch may be arranged in a silicon on insulator (SOI) layer supported by the resistive substrate material. The integrated RF circuit structure may also include an isolation layer coupled to the SOI layer. The integrated RF circuit structure may further include a filter, composed of inductors and capacitors. The filter may be arranged on a surface of the integrated RF circuit structure, opposite the resistive substrate material. In addition, the switch may be arranged on a first surface of the isolation layer.

公开(公告)号：EP3394889A1

公开(公告)日：2018-10-31

申请号：EP15911562.5

申请日：2015-12-22

申请人： Intel Corporation

发明人： KAMGAING, Telesphor ,  DOGIAMIS, Georgios, C. ,  NAIR, Vijay, K.

IPC分类号： H01L23/66 ,  H01L23/28 ,  H01L25/065

CPC分类号： H01L23/66 ,  H01L23/5384 ,  H01L23/5389 ,  H01L23/552 ,  H01L24/16 ,  H01L24/20 ,  H01L25/105 ,  H01L25/18 ,  H01L2223/6622 ,  H01L2223/6672 ,  H01L2223/6677 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13025 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16265 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/10253 ,  H01L2924/1032 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/15192 ,  H01L2924/18162 ,  H01L2924/19011 ,  H01L2924/19104 ,  H01L2924/19105 ,  H01L2924/30111 ,  H01L2924/3025 ,  H01Q1/243 ,  H01Q1/38

摘要： Embodiments of the invention include a microelectronic device that includes an overmolded component having a first die with a silicon based substrate. A second die is coupled to the first die with the second die being formed with compound semiconductor materials in a different substrate. A substrate is coupled to the first die. The substrate includes an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.

公开(公告)号：EP3367563A1

公开(公告)日：2018-08-29

申请号：EP18153014.8

申请日：2018-01-23

申请人： NXP USA, Inc.

发明人： MIN, Seungkee ,  SZYMANOWSKI, Margaret A. ,  CHRISTANGE, Henry Andre

IPC分类号： H03F3/195 ,  H01L23/66 ,  H03F1/02 ,  H03F3/24 ,  H03F1/56

CPC分类号： H03F1/0288 ,  H01L23/66 ,  H01L2223/6611 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2223/6672 ,  H03F1/56 ,  H03F1/565 ,  H03F3/195 ,  H03F3/213 ,  H03F3/24 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/42 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/54

摘要： A multiple-stage RF amplifier and a packaged amplifier device include driver and final-stage transistors, each having a control terminal, a first current-carrying terminal, and a second current-carrying terminal. The control terminal of the final-stage transistor is electrically coupled to the first current-carrying terminal of the driver transistor. The amplifier further includes an inter-stage circuit coupled between the first current carrying terminal of the driver transistor and a voltage reference node. The inter-stage circuit includes a first inductance, a first capacitor, and a second capacitor. The first inductance and the first capacitor are coupled in series between the first current carrying terminal and the voltage reference node, with a first intermediate node between the first inductance and the first capacitor. The second capacitor has a first terminal electrically coupled to the first intermediate node and a second terminal electrically coupled to the voltage reference node.

公开(公告)号：EP3273596A1

公开(公告)日：2018-01-24

申请号：EP17181815.6

申请日：2017-07-18

申请人： Ampleon Netherlands B.V.

发明人： De Boet, Johannes Adrianus Maria ,  Sveshtarov, Iordan Konstantinov ,  Van Rijs, Freerk

IPC分类号： H03F1/56 ,  H03F3/189 ,  H03F3/24 ,  H03H7/01

CPC分类号： H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2224/48137 ,  H01L2224/49176 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/13091 ,  H01L2924/19011 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19051 ,  H01L2924/19105 ,  H03F1/0288 ,  H03F1/3205 ,  H03F1/565 ,  H03F3/189 ,  H03F3/195 ,  H03F3/245 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/399 ,  H03F2200/451 ,  H03H7/1791 ,  H03H7/38

摘要： The present invention relates to a radiofrequency (RF) power transistor package. It further relates to a mobile telecommunications base station comprising such a RF power transistor package, and to an integrated passive die suitable for an RF power amplifier package.
According to the present invention, an in-package impedance network is used that is connected to the output of the RF power transistor arranged inside the package. This network comprises a first inductive element having a first and second terminal, the first terminal being electrically connected to the output of the RF transistor, a resonance unit being electrically connected to second terminal of the first inductive element, and a second capacitive element electrically connected in between the resonance unit and ground.
According to the present invention, the first capacitive element is arranged in series with the second capacitive element.

摘要翻译： 射频（RF）功率晶体管封装技术领域本发明涉及射频（RF）功率晶体管封装。 本发明还涉及包括这种RF功率晶体管封装的移动电信基站以及适用于RF功率放大器封装的集成无源管芯。 根据本发明，使用连接到布置在封装内的RF功率晶体管的输出的封装内阻抗网络。 该网络包括具有第一和第二端子的第一电感元件，第一端子电连接到RF晶体管的输出，谐振单元电连接到第一电感元件的第二端子，以及第二电容元件电连接 在谐振单元和地之间。 根据本发明，第一电容元件与第二电容元件串联布置。

公开(公告)号：EP3262707A1

公开(公告)日：2018-01-03

申请号：EP16707065.5

申请日：2016-02-24

申请人： Université Paris Diderot - Paris 7 ,  Centre National de la Recherche Scientifique CNRS

发明人： DESFONDS, Pascal ,  TODOROV, Yanko ,  SIRTORI, Carlo

IPC分类号： H01P7/08 ,  G02B1/00 ,  H01P1/20 ,  H01Q15/00 ,  H01P5/02 ,  H01P11/00 ,  H01P1/203

CPC分类号： H01P7/08 ,  G02B1/002 ,  H01L21/30612 ,  H01L21/32051 ,  H01L23/66 ,  H01L28/10 ,  H01L28/40 ,  H01L31/02005 ,  H01L31/02019 ,  H01L31/035209 ,  H01L33/06 ,  H01L33/62 ,  H01L2223/6627 ,  H01L2223/6672 ,  H01L2223/6677 ,  H01P1/2005 ,  H01P1/20372 ,  H01P5/028 ,  H01P7/082 ,  H01P11/008 ,  H01Q15/006

摘要： The invention relates to a three-dimensional LC electrical resonator device (1) having a given resonant frequency of 100 gigahertz or more, comprising: a separating layer (4); a first track (3) made of a conductor and comprising two overlapping portions (31, 32); and a second track (5) made of a conductor, the second track (5) comprising two overlapping portions (51, 52) and an inductive loop (53) connecting the two overlapping portions (51, 52), the first track (3) and the second track (5) respectively being formed on either side of the separating layer (4), each overlapping portion (31, 32) of the first track (3) being placed facing a respective overlapping portion (51, 53) of the second track (5) so as to form two capacitors (C
1 , C
2 ) that are spatially spaced apart from each other.

公开(公告)号：EP3161840A1

公开(公告)日：2017-05-03

申请号：EP14895620.4

申请日：2014-06-25

申请人： Intel Corporation

发明人： ELSAYED, Rany, T. ,  GOEL, Niti ,  BOU-GHAZALE, Silvio, E. ,  ROY, Anshumali ,  YIP, Joseph, C.

IPC分类号： H01F17/00 ,  H01G4/32 ,  H01F41/04

CPC分类号： H01L23/66 ,  G03F7/2059 ,  H01F17/0006 ,  H01F41/042 ,  H01G4/012 ,  H01G4/40 ,  H01L28/10 ,  H01L28/60 ,  H01L2223/6672

摘要： Techniques are disclosed for forming integrated passive devices, such as inductors and capacitors, using next-generation lithography (NGL) processes, such as electron-beam direct write (EBDW) and extreme ultraviolet lithography (EUVL). The techniques can be used to form various different integrated passive devices, such as inductors (e.g., spiral inductors) and capacitors (e.g., metal finger capacitors), having higher density, precision, and quality factor (Q) values than if such devices were formed using 193 nm photolithography. The high Q and dense passive devices formed can be used in radio frequency (RF) and analog circuits to boost the performance of such circuits. The increased precision may be realized based on an improvement in, for example, line edge roughness (LER), achievable resolution/critical dimensions, sharpness of corners, and/or density of the formed structures.

摘要翻译： 公开了使用诸如电子束直写（EBDW）和极紫外光刻（EUVL）的下一代光刻（NGL）工艺来形成诸如电感器和电容器的集成无源器件的技术。 这些技术可用于形成各种不同的集成无源器件，例如电感器（例如螺旋电感器）和电容器（例如金属指状电容器），其密度，精度和品质因数（Q）值高于如果这样的器件是 使用193纳米光刻法形成。 所形成的高Q和密集无源器件可用于射频（RF）和模拟电路，以提高此类电路的性能。 可以基于例如线边缘粗糙度（LER），可实现的分辨率/关键尺寸，拐角的锐度和/或所形成的结构的密度的改进来实现提高的精确度。