公开(公告)号：EP2329430A1

公开(公告)日：2011-06-08

申请号：EP09786833.5

申请日：2009-08-06

申请人： NXP B.V.

发明人： TIGGELMAN, Markus Petrus Josephus ,  REIMANN, Klaus

IPC分类号： G06K19/077 ,  H01L27/00

CPC分类号： G06K7/0008 ,  G06K19/0723 ,  G06K19/0726 ,  G06K19/07749 ,  H01L23/66 ,  H01L2223/6677 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/19015 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A reconfigurable radio-frequency front-end 20 with an antenna 24 and a resonant circuit within a matching network 22. In order to provide for high tuning range with low cost and low size, a matching network 22 may comprise at least one electrically tunable passive solid-state dielectrical component 6 on a carrier substrate 2.

公开(公告)号：EP2302675A1

公开(公告)日：2011-03-30

申请号：EP09305907.9

申请日：2009-09-29

申请人： STMicroelectronics (Grenoble 2) SAS

发明人： Coffy, Romain ,  Imbs, Yvon ,  Marechal, Laurent

IPC分类号： H01L23/552 ,  H01L23/64

CPC分类号： H01L23/645 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/552 ,  H01L24/19 ,  H01L24/20 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/20 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19015 ,  H01L2924/19042 ,  H01L2924/3025 ,  Y10T29/4902 ,  H01L2224/82 ,  H01L2924/00

摘要： There is provided an electronic device (1) which comprises an electronic component (10) having a substrate and a plurality of metal interconnection layers (111), the plurality of metal interconnection layers having a top surface. It further comprises a dielectric layer (120) situated above said metal interconnection layers (111), a conductive layer (122) situated above said dielectric layer, an inductor coil (124) and a ground shield (113), the inductor coil (124) being formed in the conductive layer (122) and the ground shield (113) being formed in a layer of said plurality of metal interconnection layers (111).

摘要翻译： 提供了一种电子设备（1），其包括具有基板和多个金属互连层（111）的电子部件（10），所述多个金属互连层具有顶表面。 它还包括位于所述金属互连层（111）上方的介电层（120），位于所述介电层上方的导电层（122），电感线圈（124）和接地屏蔽（113），所述电感线圈 ）形成在导电层（122）中，并且接地屏蔽（113）形成在所述多个金属互连层（111）的层中。

公开(公告)号：EP1684347A3

公开(公告)日：2009-10-07

申请号：EP06250367.7

申请日：2006-01-24

申请人： SANYO ELECTRIC CO., LTD. ,  Kanto Sanyo Semiconductors Co., Ltd.

发明人： Sato, Akihiro ,  Sekiguchi, Satoru ,  Kamado, Kiyokazi ,  Tsubonoya, Makoto ,  Mita, Kiyoshi ,  Nabeta, Yoichi

IPC分类号： H01L23/64

CPC分类号： H01L23/49838 ,  H01L23/3121 ,  H01L23/49822 ,  H01L23/552 ,  H01L23/645 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/07802 ,  H01L2924/12034 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/3025 ,  H03J2200/10 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor apparatus having a semiconductor chip, a first coil electrically connected to the semiconductor chip and a first electrode electrically connected to the first coil is comprised of a second electrode which can be electrically connected to the first electrode as well as which can be electrically connected to a second coil on the outside of the semiconductor apparatus, and is characterized by that inductance composed of the first coil and the second coil is obtained by electrically connecting the second electrode to the first electrode and the second coil.

摘要翻译： 具有半导体芯片，电连接到半导体芯片的第一线圈和电连接到第一线圈的第一电极的半导体装置由第二电极组成，第二电极可以电连接到第一电极并且可以电连接 连接到半导体装置外部的第二线圈，并且其特征在于由第一线圈和第二线圈组成的电感是通过将第二电极电连接到第一电极和第二线圈而获得的。

公开(公告)号：EP1944802A2

公开(公告)日：2008-07-16

申请号：EP07025144.2

申请日：2007-12-27

申请人： MediaTek, Inc

发明人： Chen, Nan-Jang ,  Lin, Hong-Chin

IPC分类号： H01L23/495 ,  H01L23/31 ,  H01L21/48 ,  H01L23/50 ,  H01L25/065

CPC分类号： H01L23/49531 ,  H01L21/4832 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/49582 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49171 ,  H01L2224/49173 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2224/85469 ,  H01L2224/85473 ,  H01L2224/85476 ,  H01L2224/85478 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19015 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012

摘要： A leadframe package includes a die pad with four unitary, outwardly extending slender bars; a plurality of leads arranged along periphery of the die pad; a separate pad segment separated from the die pad and isolated from the plurality of leads; a semiconductor die mounted on an upper side of the die pad, wherein the semiconductor die contains first bond pads wire-bonded to respective the plurality of leads and a second bond pad wire-bonded to the separate pad segment; and a molding compound encapsulating the semiconductor die, the upper side of the die pad, the first suspended pad segment and inner portions of the plurality of leads.

公开(公告)号：EP1944802B1

公开(公告)日：2018-02-14

申请号：EP07025144.2

申请日：2007-12-27

申请人： MediaTek Inc.

发明人： Chen, Nan-Jang ,  Lin, Hong-Chin

IPC分类号： H01L23/495 ,  H01L23/31 ,  H01L21/48 ,  H01L23/50 ,  H01L23/66 ,  H01L23/00 ,  H01L25/10 ,  H01L25/16

CPC分类号： H01L23/49531 ,  H01L21/4832 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/49582 ,  H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L25/16 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49171 ,  H01L2224/49173 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2224/85469 ,  H01L2224/85473 ,  H01L2224/85476 ,  H01L2224/85478 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01076 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19015 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2924/00012

摘要： A leadframe package includes a die pad with four unitary, outwardly extending slender bars; a plurality of leads arranged along periphery of the die pad; a separate pad segment separated from the die pad and isolated from the plurality of leads; a semiconductor die mounted on an upper side of the die pad, wherein the semiconductor die contains first bond pads wire-bonded to respective the plurality of leads and a second bond pad wire-bonded to the separate pad segment; and a molding compound encapsulating the semiconductor die, the upper side of the die pad, the first suspended pad segment and inner portions of the plurality of leads.

公开(公告)号：EP2538441A3

公开(公告)日：2017-07-12

申请号：EP12005860.7

申请日：2010-06-03

申请人： Qualcomm Incorporated

发明人： Rangarajan, Rajagopala ,  Mishra, Chinmaya ,  Bhagat, Maulin ,  Jin, Zhang

IPC分类号： H01L23/498 ,  H01L23/64 ,  H03B1/02

CPC分类号： H03B21/00 ,  H01L23/49816 ,  H01L23/645 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/19015 ,  H01L2924/3011 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A wideband frequency generator has two or more oscillators for different frequency bands, disposed on the same die within a flip chip package. Coupling between inductors of the two oscillators is reduced by placing one inductor on the die and the other inductor on the package, separating the inductors by a solder bump diameter. The loosely coupled inductors allow manipulation of the LC tank circuit of one of the oscillators to increase the bandwidth of the other oscillator, and vice versa. Preventing undesirable mode of oscillation in one of the oscillators may be achieved by loading the LC tank circuit of the other oscillator with a large capacitance, such as the entire capacitance of the coarse tuning bank of the other oscillator.; Preventing the undesirable mode may also be achieved by decreasing the quality factor of the other oscillator's LC tank and thereby increasing the losses in the tank circuit.

摘要翻译： 宽带频率发生器具有用于不同频带的两个或更多个振荡器，设置在倒装芯片封装内的同一管芯上。 两个振荡器的电感器之间的耦合通过将一个电感器放置在管芯上并将另一个电感器放置在封装上而减小，通过焊料凸点直径将电感器分开。 松散耦合的电感允许操纵其中一个振荡器的LC谐振电路来增加另一个振荡器的带宽，反之亦然。 通过将另一个振荡器的LC振荡回路加载一个大电容，例如另一个振荡器的粗调谐组的整个电容，可以实现防止一个振荡器中的不期望的振荡模式。 防止不希望的模式也可以通过降低另一个振荡器的LC谐振回路的品质因数来实现，从而增加谐振回路中的损耗。

公开(公告)号：EP2287890A3

公开(公告)日：2011-08-17

申请号：EP10012703.4

申请日：2001-08-27

申请人： Megica Corporation

发明人： Lin, Mou-Shiung

IPC分类号： H01L21/02 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L21/60 ,  H01L27/08

CPC分类号： H01L28/10 ,  H01L21/768 ,  H01L21/76807 ,  H01L21/76838 ,  H01L23/3192 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L23/5286 ,  H01L23/5329 ,  H01L23/53295 ,  H01L23/60 ,  H01L23/642 ,  H01L23/645 ,  H01L23/647 ,  H01L24/03 ,  H01L24/05 ,  H01L27/0676 ,  H01L27/08 ,  H01L28/20 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/0554 ,  H01L2224/13022 ,  H01L2224/16225 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15174 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  Y10S257/92 ,  H01L2924/00

摘要： An integrated circuit chip comprising:
- a silicon substrate;
- a first dielectric layer over said silicon substrate;
- a metallization structure over said first dielectric layer, wherein said metallization structure comprises a first metal layer and a second metal layer over said first metal layer, wherein said metallization structure comprises electroplated gold;
- a second dielectric layer between said first and second metal layers;
- a separating layer over said metallization structure and over said first and second dielectric layers, wherein said separating layer comprises a nitride layer; and
- a third metal layer over said separating layer, wherein said third metal layer comprises at least a portion, vertically over said separating layer, of an inductor, wherein said third metal layer comprises electroplated gold.

公开(公告)号：EP1681720A3

公开(公告)日：2008-12-24

申请号：EP06250047.5

申请日：2006-01-05

申请人： SYCHIP INC.

发明人： Chiu, Anthony M. ,  Degani, Yinon ,  Gao, Charley Chunlei ,  Sun, Kunquan ,  Sun, Liquo

IPC分类号： H01L23/66 ,  H01L27/01 ,  H01L25/16

CPC分类号： H01L25/16 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49833 ,  H01L23/645 ,  H01L23/66 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L27/016 ,  H01L28/10 ,  H01L28/20 ,  H01L28/40 ,  H01L2224/16145 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/19011 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19103 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/48237 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The specification describes a multi-chip module (MCM) that contains an integrated passive device (IPD) as the carrier substrate (IPD MCM). Parasitic electrical interactions are controlled at one or both interfaces of the IPD either by eliminating metal from the interfaces, or by selective use of metal in parts of the MCM that are remote from the sensitive device components. The sensitive device components are primarily analog circuit components, especially RF inductor elements. In the IPD layout, the sensitive components are segregated from other components. This allows implementation of the selective metal approach. It also allows parasitic interactions on top of the IPD substrate to be reduced by selective placement of IC semiconductor chips and IC chip ground planes. In preferred embodiments of the IPD MCM of the invention, the IPD substrate is polysilicon, to further minimize RF interactions. The various methods of assembling the module may be adapted to keep the overall thickness within 1.0 mm.

公开(公告)号：EP1161125A2

公开(公告)日：2001-12-05

申请号：EP01304508.3

申请日：2001-05-23

申请人： ALPS ELECTRIC CO., LTD.

发明人： Yoshisato, Akiyuki ,  Ueda, Kazuhiko ,  Ikarashi, Yasuhiro ,  Inoue, Akihiko ,  Sakuma, Hiroshi

IPC分类号： H05K1/18

CPC分类号： H05K3/403 ,  H01L23/647 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H05K1/0306 ,  H05K1/092 ,  H05K1/16 ,  H05K3/246 ,  H05K2201/0317 ,  H05K2201/0347 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099 ,  H01L2924/00

摘要： The invention provides a surface mounting typing electronic circuit unit that is suitable for miniaturization and is suitable for simple output adjustment. Circuit elements including capacitors (C), resistors (R), and inductance elements (L) and a conducting pattern connected to the circuit elements are formed on an alumina substrate (1) by means of thin film forming technique, and a diode (D1) and a semiconductor chip of a transistor are fixed to a connection land of the conducting pattern by means of wire bonding, wherein only the emitter resistor out of the base bias voltage dividing resistors and the emitter resistor of the transistor is trimmed for output adjustment.

摘要翻译： 本发明提供一种适合小型化的表面贴装型电子电路单元，适用于简单的输出调整。 通过薄膜形成技术在氧化铝基板（1）上形成包括电容器（C），电阻器（R）和电感元件（L）的电路元件和连接到电路元件的导电图案，并且二极管 ），并且晶体管的半导体芯片通过引线键合固定到导电图案的连接焊盘，其中只有基极偏压分压电阻器中的发射极电阻器和晶体管的发射极电阻器被修整以进行输出调节。

公开(公告)号：EP3273596A1

公开(公告)日：2018-01-24

申请号：EP17181815.6

申请日：2017-07-18

申请人： Ampleon Netherlands B.V.

发明人： De Boet, Johannes Adrianus Maria ,  Sveshtarov, Iordan Konstantinov ,  Van Rijs, Freerk

IPC分类号： H03F1/56 ,  H03F3/189 ,  H03F3/24 ,  H03H7/01

CPC分类号： H01L23/66 ,  H01L24/48 ,  H01L24/49 ,  H01L2223/6655 ,  H01L2223/6672 ,  H01L2224/48137 ,  H01L2224/49176 ,  H01L2924/10253 ,  H01L2924/1033 ,  H01L2924/13091 ,  H01L2924/19011 ,  H01L2924/19015 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19051 ,  H01L2924/19105 ,  H03F1/0288 ,  H03F1/3205 ,  H03F1/565 ,  H03F3/189 ,  H03F3/195 ,  H03F3/245 ,  H03F2200/387 ,  H03F2200/391 ,  H03F2200/399 ,  H03F2200/451 ,  H03H7/1791 ,  H03H7/38

摘要： The present invention relates to a radiofrequency (RF) power transistor package. It further relates to a mobile telecommunications base station comprising such a RF power transistor package, and to an integrated passive die suitable for an RF power amplifier package.
According to the present invention, an in-package impedance network is used that is connected to the output of the RF power transistor arranged inside the package. This network comprises a first inductive element having a first and second terminal, the first terminal being electrically connected to the output of the RF transistor, a resonance unit being electrically connected to second terminal of the first inductive element, and a second capacitive element electrically connected in between the resonance unit and ground.
According to the present invention, the first capacitive element is arranged in series with the second capacitive element.

摘要翻译： 射频（RF）功率晶体管封装技术领域本发明涉及射频（RF）功率晶体管封装。 本发明还涉及包括这种RF功率晶体管封装的移动电信基站以及适用于RF功率放大器封装的集成无源管芯。 根据本发明，使用连接到布置在封装内的RF功率晶体管的输出的封装内阻抗网络。 该网络包括具有第一和第二端子的第一电感元件，第一端子电连接到RF晶体管的输出，谐振单元电连接到第一电感元件的第二端子，以及第二电容元件电连接 在谐振单元和地之间。 根据本发明，第一电容元件与第二电容元件串联布置。