摘要:
The present invention is directed to a composition for depositing a palladium coating on a substrate, in particular on a nickel-coated substrate, the composition comprising: (i) palladium ions, (ii) chloride ions, (iii) ethylenediamine (EDA), (iv) ethylenediamine disuccinate (EDDS), and (v) at least one reducing agent.
摘要:
An autocatalytic tin plating bath containing Sn 2+ ions, Ti 3+ ions as reducing agent, an organic complexing agent and phenanthroline or a derivative thereof as stabilizing agent is disclosed. The plating bath is suitable for manufacture of printed circuit boards, lC substrates and metallization of semiconductor wafers.
摘要:
The present invention is directed to a composition for depositing a palladium coating on an activated copper-coated substrate, the composition comprising: (i) palladium ions, (ii) chloride ions, (iii) ethylenediamine (EDA), (iv) ethylenediamine disuccinate (EDDS), and (v) at least one reducing agent, wherein the composition has a pH in a range from 7.5 to 9.5, preferably from 7.6 to 9.1, more preferably from 7.7 to 8.7, and most preferably from 7.8 to 8.5.
摘要:
The present invention concerns an aqueous plating bath composition for electroless deposition of palladium and/or palladium alloys and a method which utilises such aqueous plating bath compositions. The aqueous plating bath comprises a source of palladium ions, a reducing agent, a nitrogenated complexing agent which is free of phosphorous and an organic stabilising agent comprising 1 to 5 phosphonate residues. The aqueous plating bath and the method are particularly useful if the aqueous plating bath comprises copper ions.
摘要:
To achieve good solder performance with Pd-free solder to a BGA design, a layer assembly comprising first, second and, optionally, third sub-layers is provided, wherein said first sub-layer comprises a first material, said first material comprising nickel and phosphorus and said first sub-layer being in contact with said second sub-layer; said second sub-layer comprises a second material, said second material comprising palladium and phosphorus and said second sub-layer being in contact with said first sub-layer and said third sub-layer and wherein said second sub-layer is at least 0.1 µm thick; and said third sub-layer comprises a third material, said third material consisting of gold or a gold alloy and said third sub-layer being in contact with said second sub-layer. Such layer assembly is coated to the copper structure which is provided on one or on both sides of the carrier corpus of a circuit carrier.