AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES HAVING PATTERNED OR UNPATTERNED LOW-K DIELECTRIC LAYERS
    4.
    发明公开
    AQUEOUS POLISHING COMPOSITION AND PROCESS FOR CHEMICALLY MECHANICALLY POLISHING SUBSTRATES HAVING PATTERNED OR UNPATTERNED LOW-K DIELECTRIC LAYERS 有权
    含水抛光组合物和方法与结构化或非结构化介电Low-k膜的化学机械抛光SUBSTRATES

    公开(公告)号:EP2625236A4

    公开(公告)日:2014-05-14

    申请号:EP11830272

    申请日:2011-10-04

    Applicant: BASF SE

    Abstract: An aqueous polishing composition comprising (A) abrasive particles and (B) an amphiphilic nonionic surfactant selected from the group consisting of water-soluble or water-dispersible surfactants having (b1) hydrophobic groups selected from the group consisting of branched alkyl groups having 10 to 18 carbon atoms; and (b2) hydrophilic groups selected from the group consisting of polyoxyalkylene groups comprising (b21) oxyethylene monomer units and (b22) substituted oxyalkylene monomer units wherein the substituents are selected from the group consisting of alkyl, cycloalkyl, or aryl, alkyl-cycloalkyl, alkyl-aryl, cycloalkyl-aryl and alkyl-cycloalkyl-aryl groups, the said polyoxyalkylene group containing the monomer units (b21) and (b22) in random, alternating, gradient and/or blocklike distribution; a CMP process for substrates having patterned or unpatterned low-k or ultra-low-k dielectric layers making use of the said aqueous polishing composition; and the use of the said aqueous polishing composition for manufacturing electrical, mechanical and optical devices.

    Abstract translation: 在wässrige抛光组合物,包括(A)磨粒和(B)以选自水溶性或水分散性表面活性剂的由具有(B1)选自疏水性基团具有10到支链烷基的由...组成选定的两亲性非离子表面活性剂 18个碳原子; 和(b2)选自聚氧化烯基团,其包含(B21)氧化乙烯单体单元和所选择的亲水性基团(B22)substituiertem氧化烯单体单元worin所述取代基选自烷基,环烷基,或芳基,烷基 - 环烷基的选择, 烷基 - 芳基,环烷基 - 芳基和烷基 - 环烷基 - 芳基,聚氧化烯基团,所述含单体单元(B21)和(B22)在无规,交替,梯度和/或嵌段状分布; 用于基板CMP工艺具有图案化或非图案化的低k或超低k介电层使采用了所述的wässrige抛光组合物; 并且由于使用上述的wässrige研磨用组合物用于制造电子,机械和光学器件。

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