公开(公告)号：EP3099837A1

公开(公告)日：2016-12-07

申请号：EP15701181.8

申请日：2015-01-22

Applicant: BASF SE

Inventor： XU, Ke ,  SCHILDKNECHT, Christian ,  SPIELMANN, Jan ,  FRANK, Jürgen ,  BLASBERG, Florian ,  GÄRTNER, Martin ,  LÖFFLER, Daniel ,  WEIGUNY, Sabine ,  SCHIERLE-ARNDT, Kerstin ,  FEDERSEL, Katharina ,  ABELS, Falko ,  ADERMANN, Torben

IPC: C23C16/455 ,  C07F3/00

CPC classification number: C23C16/45553 ,  C07F3/00 ,  C07F3/003 ,  C07F15/045 ,  C07F15/065

Abstract: The present invention relates to a process for the generation of thin inorganic films on substrates, in particular an atomic layer deposition process. This process comprises bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4,R5, and R6 are independent of each other hydrogen,an alkyl group,or a trialkylsilyl group, n isan integer from 1 to 3, M is a metal or semimetal, 1 X is a ligand which coordinates M, and m is an integer from 0 to 4.