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公开(公告)号：EP3526363A1
公开(公告)日：2019-08-21
申请号：EP17777596.2
申请日：2017-10-05
Applicant: BASF SE
Inventor： SCHWEINFURTH, David Dominique , ABELS, Falko , MAYR, Lukas , LOEFFLER, Daniel , WALDMANN, Daniel
IPC: C23C14/58 , C23C16/455 , C23C16/56
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公开(公告)号：EP3507293A1
公开(公告)日：2019-07-10
申请号：EP17755200.7
申请日：2017-08-23
Applicant: BASF SE
Inventor： ADERMANN, Torben , ABELS, Falko , LIMBURG, Carolin , WILMER, Hagen , GERKENS, Jan , SCHNEIDER, Sven
IPC: C07F15/00 , C23C16/455
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公开(公告)号：EP3380644A1
公开(公告)日：2018-10-03
申请号：EP16798703.1
申请日：2016-11-18
Applicant: BASF SE
Inventor： ADERMANN, Torben , LOEFFLER, Daniel , LIMBURG, Carolin , ABELS, Falko , WILMER, Hagen , GILL, Monica , GRIFFITHS, Matthew , BARRY, Séan
IPC: C23C16/18 , C07F13/00 , C07F15/04 , C07F15/06 , C23C16/455
CPC classification number: C23C16/18 , C07F15/06 , C23C16/45553
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. The present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, and R4 are independent of each other an alkyl group, an aryl group or a trialkylsilyl group, M is Mn, Ni or Co, X is a ligand which coordinates M, wherein at least one X is a neutrally charged ligand, m is 1, 2 or 3 and n is at least 1 wherein the molecular weight of the compound of general formula (I) is up to 1000 g/mol.
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Patent Agency Ranking
公开(公告)号：EP3268509A1
公开(公告)日：2018-01-17
申请号：EP16707435.0
申请日：2016-03-02
Applicant: BASF SE
Inventor： SPIELMANN, Jan , ABELS, Falko , BLASBERG, Florian , FEDERSEL, Katharina , SCHILDKNECHT, Christian , LOEFFLER, Daniel , ADERMANN, Torben , FRANK, Juergen , SCHIERLE-ARNDT, Kerstin , WEIGUNY, Sabine
IPC: C23C16/455 , C07D207/08
CPC classification number: C07F7/0814 , C07D207/08 , C09D1/00 , C23C16/18 , C23C16/409 , C23C16/45553
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular the present invention relates to a process comprising bringing a com- pound of general formula (I) into the gaseous or aerosol state Ln---M--Xm L= formula and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4, are independent of each other hydrogen, an alkyl group, an aryl group, or a SiA3 group with A being an alkyl or aryl group, and at least two of R1, R2, R3, R4 are a SiA3 group, n is an integer from 1 to 4, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 4.
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公开(公告)号：EP3380644B1
公开(公告)日：2019-08-21
申请号：EP16798703.1
申请日：2016-11-18
Applicant: BASF SE
Inventor： ADERMANN, Torben , LOEFFLER, Daniel , LIMBURG, Carolin , ABELS, Falko , WILMER, Hagen , GILL, Monica , GRIFFITHS, Matthew , BARRY, Séan
IPC: C23C16/18 , C07F13/00 , C07F15/04 , C07F15/06 , C23C16/455
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公开(公告)号：EP3408273A1
公开(公告)日：2018-12-05
申请号：EP17700455.3
申请日：2017-01-17
Applicant: BASF SE
Inventor： ABELS, Falko , LOEFFLER, Daniel , WILMER, Hagen , WOLF, Robert , ROEDL, Christian , BÜSCHELBERGER, Philipp
IPC: C07F9/6568 , C07F15/06 , C23C16/18
CPC classification number: C07F9/65686 , C07F15/06 , C23C16/34 , C23C16/40 , C23C16/4486 , C23C16/45525
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state Ln....M... Xm (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein M is a metal, L is a ligand which coordinates to M and contains at least one phosphorus-carbon multiple bond, wherein L contains a phosphorus-containing heterocyclic ring or a phosphorus-carbon triple bond, X is a ligand which coordinates to M, n is 1 to 5, and m is 0 to 5.
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公开(公告)号：EP3384065A1
公开(公告)日：2018-10-10
申请号：EP16804762.9
申请日：2016-11-29
Applicant: BASF SE
Inventor： ABELS, Falko , SCHWEINFURTH, David, Dominique , MATOS, Karl , LOEFFLER, Daniel , AHLF, Maraike , BLASBERG, Florian , SCHAUB, Thomas , SPIELMANN, Jan , KIRSTE, Axel , GASPAR, Boris
CPC classification number: C23C16/45553 , C07F9/5027 , C07F9/547 , C07F9/65848 , C23C16/06
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.
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公开(公告)号：EP3099837A1
公开(公告)日：2016-12-07
申请号：EP15701181.8
申请日：2015-01-22
Applicant: BASF SE
Inventor： XU, Ke , SCHILDKNECHT, Christian , SPIELMANN, Jan , FRANK, Jürgen , BLASBERG, Florian , GÄRTNER, Martin , LÖFFLER, Daniel , WEIGUNY, Sabine , SCHIERLE-ARNDT, Kerstin , FEDERSEL, Katharina , ABELS, Falko , ADERMANN, Torben
IPC: C23C16/455 , C07F3/00
CPC classification number: C23C16/45553 , C07F3/00 , C07F3/003 , C07F15/045 , C07F15/065
Abstract: The present invention relates to a process for the generation of thin inorganic films on substrates, in particular an atomic layer deposition process. This process comprises bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4,R5, and R6 are independent of each other hydrogen,an alkyl group,or a trialkylsilyl group, n isan integer from 1 to 3, M is a metal or semimetal, 1 X is a ligand which coordinates M, and m is an integer from 0 to 4.
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