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公开(公告)号：EP3177751B1
公开(公告)日：2020-10-07
申请号：EP15739640.9
申请日：2015-07-24
Applicant: BASF SE
Inventor： STRAUTMANN, Julia , PACIELLO, Rocco , SCHAUB, Thomas , SCHIERLE-ARNDT, Kerstin , LÖFFLER, Daniel , WILMER, Hagen , EICKEMEYER, Felix , BLASBERG, Florian , LIMBURG, Carolin
IPC: C23C16/18 , C23C16/455
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Patent Agency Ranking
公开(公告)号：EP3096903A1
公开(公告)日：2016-11-30
申请号：EP15703481.0
申请日：2015-01-22
Applicant: BASF SE , BASF Corporation
Inventor： BLASBERG, Florian , LUZ, Andreas , SHISHKOV, Igor , GILBERT, David Johann , ROHDE, Wolfgang
CPC classification number: B03C1/01 , B01D15/3885 , B01J20/10 , B01J20/28009 , B01J20/3204 , B01J20/3272 , B01J20/3293 , B22F1/0018 , B22F1/0062 , B22F1/0096 , B22F1/02 , C01P2004/51 , C01P2004/61 , C01P2004/62 , C01P2004/64 , C01P2006/12 , C01P2006/42 , C02F1/281 , C02F1/285 , C02F1/288 , C02F1/488 , C02F1/5236 , C02F1/545 , C02F1/56 , C02F2305/04 , C09C1/24 , C09C1/62 , C09C3/12 , G01N1/405 , H01F1/0313 , H01F1/33
Abstract: The present invention relates to core-shell-particles, wherein the core comprises at least one metal, or a compound thereof, or a mixture of at least one metal or a compound thereof and at least one semimetal or a compound thereof, and the shell comprises at least one silicon comprising polymer, to a process for the preparation of these core-shell-particles, to the use of these core-shell-particles in an agglomeration-deagglomeration process, in particular in chemical, physical or biological test methods or separation processes, decontamination processes, water purification, recycling of electrical/electronic scrap or gravity separation, and to a process for separating at least one first material from a mixture comprising this at least one first material and at least one second material.
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公开(公告)号：EP3268509A1
公开(公告)日：2018-01-17
申请号：EP16707435.0
申请日：2016-03-02
Applicant: BASF SE
Inventor： SPIELMANN, Jan , ABELS, Falko , BLASBERG, Florian , FEDERSEL, Katharina , SCHILDKNECHT, Christian , LOEFFLER, Daniel , ADERMANN, Torben , FRANK, Juergen , SCHIERLE-ARNDT, Kerstin , WEIGUNY, Sabine
IPC: C23C16/455 , C07D207/08
CPC classification number: C07F7/0814 , C07D207/08 , C09D1/00 , C23C16/18 , C23C16/409 , C23C16/45553
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular the present invention relates to a process comprising bringing a com- pound of general formula (I) into the gaseous or aerosol state Ln---M--Xm L= formula and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4, are independent of each other hydrogen, an alkyl group, an aryl group, or a SiA3 group with A being an alkyl or aryl group, and at least two of R1, R2, R3, R4 are a SiA3 group, n is an integer from 1 to 4, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 4.
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公开(公告)号：EP3177751A1
公开(公告)日：2017-06-14
申请号：EP15739640.9
申请日：2015-07-24
Applicant: BASF SE
Inventor： STRAUTMANN, Julia , PACIELLO, Rocco , SCHAUB, Thomas , SCHIERLE-ARNDT, Kerstin , LÖFFLER, Daniel , WILMER, Hagen , EICKEMEYER, Felix , BLASBERG, Florian , LIMBURG, Carolin
IPC: C23C16/18 , C23C16/455
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. More specifically, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R11, R12, R13, R14, R15, R16, R17, R18 are independent of each other hydrogen, an alkyl group, an aryl group, or a trialkylsilyl group, R21, R22, R23, R24 are independent of each other an alkyl group, an aryl group, or a trialkylsilyl group, n is 1 or 2, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 3.
Abstract translation: 本发明属于在基材上产生无机薄膜的方法领域。 更具体地说，本发明涉及一种包括使通式（I）的化合物进入气态或气溶胶状态并将通式（I）的化合物从气态或气溶胶状态沉积到固体基质上的方法，其中R 11， R12，R13，R14，R15，R16，R17，R18相互独立地为氢，烷基，芳基或三烷基甲硅烷基，R21，R22，R23，R24彼此独立地为烷基， 芳基或三烷基甲硅烷基，n为1或2，M为金属或半金属，X为配位M的配位体，m为0〜3的整数。
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公开(公告)号：EP3384065A1
公开(公告)日：2018-10-10
申请号：EP16804762.9
申请日：2016-11-29
Applicant: BASF SE
Inventor： ABELS, Falko , SCHWEINFURTH, David, Dominique , MATOS, Karl , LOEFFLER, Daniel , AHLF, Maraike , BLASBERG, Florian , SCHAUB, Thomas , SPIELMANN, Jan , KIRSTE, Axel , GASPAR, Boris
CPC classification number: C23C16/45553 , C07F9/5027 , C07F9/547 , C07F9/65848 , C23C16/06
Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates, in particular atomic layer deposition processes. It relates to a process for preparing metal films comprising (a) depositing a metal-containing compound from the gaseous state onto a solid substrate and (b) bringing the solid substrate with the deposited metal-containing compound in contact with a reducing agent in the gaseous state, wherein the reducing agent is or at least partially forms at the surface of the solid substrate a carbene, a silylene or a phosphor radical.
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公开(公告)号：EP3099837A1
公开(公告)日：2016-12-07
申请号：EP15701181.8
申请日：2015-01-22
Applicant: BASF SE
Inventor： XU, Ke , SCHILDKNECHT, Christian , SPIELMANN, Jan , FRANK, Jürgen , BLASBERG, Florian , GÄRTNER, Martin , LÖFFLER, Daniel , WEIGUNY, Sabine , SCHIERLE-ARNDT, Kerstin , FEDERSEL, Katharina , ABELS, Falko , ADERMANN, Torben
IPC: C23C16/455 , C07F3/00
CPC classification number: C23C16/45553 , C07F3/00 , C07F3/003 , C07F15/045 , C07F15/065
Abstract: The present invention relates to a process for the generation of thin inorganic films on substrates, in particular an atomic layer deposition process. This process comprises bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R1, R2, R3, R4,R5, and R6 are independent of each other hydrogen,an alkyl group,or a trialkylsilyl group, n isan integer from 1 to 3, M is a metal or semimetal, 1 X is a ligand which coordinates M, and m is an integer from 0 to 4.
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