CYCLIC OLEFIN POLYMER COMPOSITIONS AND POLYSILOXANE RELEASE LAYERS FOR USE IN TEMPORARY WAFER BONDING PROCESSES
    2.
    发明公开
    CYCLIC OLEFIN POLYMER COMPOSITIONS AND POLYSILOXANE RELEASE LAYERS FOR USE IN TEMPORARY WAFER BONDING PROCESSES 审中-公开
    CYCLISCHE OLEFINPOLYMERZUSAMMENSETZUNGEN UND POLYSILOXANFREISETZUNGSSCHICHTEN ZUR VERWENDUNG IN VERFAHREN ZUMVORÜBERGEHENDENWAFERBONDEN

    公开(公告)号:EP3092658A1

    公开(公告)日:2016-11-16

    申请号:EP15735186.7

    申请日:2015-01-06

    IPC分类号: H01L21/58

    摘要: The invention broadly relates to cyclic olefin polymer bonding compositions and release compositions, to be used independently or together, that enable thin wafer handling during microelectronics manufacturing, especially during a full-wafer mechanical debonding process. The release compositions comprise compositions made from siloxane polymers and copolymers blended in a polar solvent, and that are stable at room temperature for longer than one month. The cyclic olefin polymer bonding compositions provide high thermal stability, can be bonded to fully-treated carrier wafers, can be mechanically or laser debonded after high-temperature heat treatment, and are easily removed with an industrially-acceptable solvent. Wafers bonded according to the invention demonstrate lower overall post-grind stack TTV compared to other commercial bonding materials and can survive 200°C PECVD processing.

    摘要翻译: 本发明广泛地涉及单独或一起使用的环烯烃聚合物粘合组合物和释放组合物,其能够在微电子制造期间实现薄晶片处理,特别是在全晶片机械剥离过程中。 释放组合物包含由硅氧烷聚合物和共聚物在极性溶剂中共混制成的组合物,并且在室温下稳定长达一个月。 环烯烃聚合物粘合组合物提供高热稳定性,可以结合到完全处理的载体晶片上,可以在高温热处理后机械或激光脱粘,并且易于用工业上可接受的溶剂去除。 根据本发明的结合的晶片与其他商业粘合材料相比表现出较低的整体后研磨叠层TTV,并且能够经受200℃的PECVD处理。

    SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES
    4.
    发明公开
    SPIN-ON PROTECTIVE COATINGS FOR WET-ETCH PROCESSING OF MICROELECTRONIC SUBSTRATES 有权
    微电子基片湿蚀刻加工的SPIN-ON保护涂层

    公开(公告)号:EP2188335A2

    公开(公告)日:2010-05-26

    申请号:EP08798953.9

    申请日:2008-08-29

    IPC分类号: C08L25/04 C09D125/04

    摘要: New protective coating layers for use in wet etch processes during the production of semiconductor and MEMS devices are provided. The layers include a primer layer, a first protective layer, and an optional second protective layer. The primer layer preferably comprises an organo silane compound in a solvent system. The first protective layer includes thermoplastic copolymers prepared from styrene, acrylonitrile, and compatible compounds such as monomers, oligomers, and polymers comprising epoxy groups; poly(styrene-co-allyl alcohol); and mixtures thereof. The second protective layer comprises a highly halogenated polymer such as a chlorinated polymer which may or may not be crosslinked upon heating.

    摘要翻译: 提供了用于半导体和MEMS器件生产期间的湿法蚀刻工艺的新的保护涂层。 这些层包括底漆层,第一保护层和任选的第二保护层。 底漆层优选在溶剂体系中包含有机硅烷化合物。 第一保护层包括由苯乙烯,丙烯腈和相容性化合物如单体,低聚物和包含环氧基团的聚合物制备的热塑性共聚物; 聚(苯乙烯 - 共 - 烯丙醇); 和它们的混合物。 第二保护层包含高度卤化的聚合物,例如氯化聚合物,其可以在加热时交联或不交联。