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100 条记录 (耗时 0.017 秒)

    METHOD FOR PROCESSING AN OBJECT WITH MINIATURIZED STRUCTURES
    1.
    发明授权
    METHOD FOR PROCESSING AN OBJECT WITH MINIATURIZED STRUCTURES 有权
    一种用于处理一个对象，具有微型化结构

    公开(公告)号：EP2257853B1

    公开(公告)日：2012-07-25

    申请号：EP09715092.4

    申请日：2009-02-24

    申请人： Carl Zeiss SMS GmbH

    发明人： BUDACH, Michael ,  BRET, Tristan ,  EDINGER, Klaus ,  HOFMANN, Thorsten

    IPC分类号： G03F1/00 ,  C23C16/04 ,  H01J37/305 ,  C23C16/48

    CPC分类号： G03F1/74 ,  C23C16/047 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/24495 ,  H01J2237/30466 ,  H01J2237/30483 ,  H01J2237/31732 ,  H01J2237/31744

    摘要： The present invention relates to a method for processing an object with miniaturized structures, having the steps of : feeding a reaction gas onto a surface of the object; processing the object by directing an energetic beam onto a processing site in a region, which is to be processed, on the surface of the object, in order to deposit material on the object or to remove material from the object, detecting interaction products of the beam with the object, and deciding whether the processing of the object must be continued or can be terminated with the aid of information which is obtained from the detected interaction products of the beam with the object, the region to be processed being subdivided into a number of surface segments, and the interaction products detected upon the beam striking regions of the same surface segment being integrated to form a total signal in order to determine whether processing of the object must be continued or can be terminated.

    METHOD FOR HIGH-RESOLUTION ETCHING OF THIN LAYERS WITH ELECTRON BEAMS
    2.
    发明授权
    METHOD FOR HIGH-RESOLUTION ETCHING OF THIN LAYERS WITH ELECTRON BEAMS 有权
    方法对于高分辨率薄层蚀刻电子手段

    公开(公告)号：EP1664924B1

    公开(公告)日：2012-05-02

    申请号：EP04764051.1

    申请日：2004-08-12

    申请人： NaWoTec GmbH

    发明人： KOOPS, Hans, W., P. ,  EDINGER, Klaus ,  BABIN, Sergey ,  HOFMANN, Thorsten ,  SPIES, Maria

    IPC分类号： G03F1/74 ,  H01J37/305 ,  C23F4/00 ,  H01L21/768 ,  H01L21/3213

    CPC分类号： G03F1/74 ,  H01J37/3056 ,  H01J2237/31744 ,  H01L21/31122 ,  H01L21/32135

    摘要： The present invention concerns a method for etching a chromium layer in a vacuum chamber with the method steps of introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and introducing an oxygen containing compound into the vacuum chamber. According to a further aspect, the present invention relates to a further method for the highly resolved removal of a layer out of metal and/or metal oxide which is arranged on an isolator or a substrate having poor thermal conductivity, comprising the method steps of arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam is guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer is performed without the supply of reaction gases into the vacuum chamber.

    METHOD FOR MILLING A TARGET AREA IN A CHARGED PARTICLE BEAM SYSTEM
    6.
    发明授权
    METHOD FOR MILLING A TARGET AREA IN A CHARGED PARTICLE BEAM SYSTEM 有权
    方法处理的目标区域IN A TEILCHENSTRAHLSYSTEME

    公开(公告)号：EP1200988B1

    公开(公告)日：2010-12-22

    申请号：EP01913864.3

    申请日：2001-03-12

    申请人： FEI COMPANY

    发明人： SCHUMAN, Richard, F. ,  NOLL, Kathryn ,  CASEY, J., David, Jr.

    IPC分类号： H01L21/3213

    CPC分类号： G03F1/74 ,  H01J37/3056 ,  H01J2237/31744

    摘要： A method of enhancing charged particle beam etching particularly suitable for copper interconnects, includes milling at non-contiguous locations to prevent the formation or propagation of an etch-resistant region within the rastered area. Two or more milling boxes are typically performed, one or more of the boxes having pixel spacing greater than the spot size, with the last box using a conventional pixel spacing (default mill) smaller than the spot size to produce a uniform, planar floor of the etched area.

    Charged particle beam processing using a cluster source
    8.
    发明公开
    Charged particle beam processing using a cluster source 有权
    由群集源装置Ladungsträgerteilchenstrahlbearbeitung

    公开(公告)号：EP1918963A3

    公开(公告)日：2009-10-21

    申请号：EP07119687.7

    申请日：2007-10-31

    申请人： FEI COMPANY

    发明人： Chandler, Clive ,  Smith, Noel

    IPC分类号： H01J37/08 ,  H01J37/305

    CPC分类号： H01L21/306 ,  H01J37/3056 ,  H01J37/3178 ,  H01J2237/006 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/3142 ,  H01J2237/31732 ,  H01J2237/3174 ,  H01J2237/31742 ,  H01J2237/31744 ,  H01L21/67069

    摘要： A cluster source producing a beam of charged clusters 108 is used to assist charged particle beam processing on a work piece 112. For example, a protective layer is applied using a cluster source and a precursor gas, the gas being supplied by a gas injection system 104. The large mass of the cluster and the low energy per atom or molecule in the cluster restricts damage to within a few nanometers of the surface of the work piece. Fullerenes or clusters of fullerenes, bismuth, gold or Xe can be used with a precursor gas to deposit material onto a surface, or can be used with an etchant gas to etch the surface. Clusters can also be used to deposit material directly onto the surface to form a protective layer for charged particle beam processing or to provide energy to activate an etchant gas. An additional charged particle beam 107 can assist in machining the work piece when e.g. a protective layer is applied.

    Electron microscope for inspecting and processing of an object with miniaturized structures and method thereof
    10.
    发明公开
    Electron microscope for inspecting and processing of an object with miniaturized structures and method thereof 有权
    电子显微镜用于与微型化结构及其方法检查和处理对象

    公开(公告)号：EP1903596A2

    公开(公告)日：2008-03-26

    申请号：EP07018076.5

    申请日：2007-09-14

    申请人： Carl Zeiss NTS GmbH

    发明人： Bihr, Johannes ,  Panteleit, Friedhelm, Dr. , 

    IPC分类号： H01J37/317 ,  H01J37/305 ,  H01J37/28

    CPC分类号： H01J37/301 ,  G03F1/72 ,  G03F1/86 ,  H01J37/244 ,  H01J37/28 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/006 ,  H01J2237/18 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/2449 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31732 ,  H01J2237/31744

    摘要： The invention relates to a method for manufacturing an object with miniaturized structures, comprising: Processing the object by supplying reaction gas during concurrent directing an electron beam onto a location to be processed, to deposit material or ablate material; and inspecting the object by scanning the surface of the object with an electron beam and leading generated backscattered electrons and secondary electrons to an energy selector, reflecting the secondary electrons from the energy selector, detecting the backscattered electrons passing the energy selector and generating an electron microscopic image of the scanned region in dependence on the detected backscattered electrons; and examining the generated electron microscopic image and deciding whether further depositing or ablating of material should be carried out. Furthermore, the invention relates to an electron microscope and a processing system which are adapted for performing the method.

    摘要翻译： 本发明涉及一种用于制造物体的与小型化的结构，包括：通过到一个位置导向并发到电子束期间供应反应气体处理所述被处理物体，以沉积材料或烧蚀材料; 并通过在电子束与扫描物体的表面，并且在能量选择导致产生的背散射电子和二次电子，反射从能量选择二次电子，检测所述背散射电子穿过能量选择器，并产生在电子显微镜检查对象 在所检测到的背散射电子的依赖扫描区域的图像; 并检查所产生的电子显微图像和决定是否进一步沉积或材料的烧蚀应进行。 进一步，本发明涉及到在电子显微镜的，哪些是angepasst用于执行该方法的处理系统。