摘要:
Nouvelle classe de compositions polymères à structure en peigne particulièrement utiles comme compositions photosensibles tels que les masques à souder photorésistants et matières analogues. Ces compositions comprennent un produit polymère ramifié contenant des groupes hydrophiles, c'est-à-dire un polymère à structure en peigne comprenant un ou plusieurs segment(s) polymères de ramification reliés à un segment squelette polymère linéaire. Le segment de squelette polymère linéaire a une masse moléculaire moyenne (Mw) se situant entre 10 000 et environ 500 000 et les segments polymères ramifiés ont une masse moléculaire moyenne (Mw) d'environ 40 000 ou moins, de telle sorte que le rapport massique du segment squelette aux segments ramifiés se situe entre 200/1 et 1/4, et de telle sorte que les segments ramifiés comportent 30 à 100 % de groupes hydrophiles. Les polymères à structure en peigne de cette invention sont particulièrement utiles en tant que liants dans des compositions photosensibles renfermant des monomères réticulés tels que des masques de soudure. Sous l'effet d'une exposition à une radiation actinique, les revêtements de masque de soudure élaborés à partir de telles compositions photosensibles forment des masques protecteurs permanents présentant une dureté et une flexibilité supérieures.
摘要:
Nitrile/fluoroalcohol-containing photoresists and associated processes for microlithography are described. These photoresists are comprised of a fluoroalcohol functional group and a nitrile-containing compound which together simultaneously impart high ultraviolet (UV) transparency and developability in basic media to these materials. The materials of this invention have high UV transparency, particularly at short wavelengths, e.g., 157 nm, which makes them highly useful for lithography at these short wavelengths.
摘要:
The present invention is generally directed to a hole transport polymer comprising a polymeric backbone having linked thereto a plurality of substituents comprising fused aromatic ring groups, with the proviso that the polymer does not contain groups selected from triarylamines and carbazole groups. It further relates to devices that are made with the polymer.
摘要:
The present invention is generally directed to a polymeric metal complex comprising a polymeric material having a plurality of a first-type functional groups, wherein at least a portion of the functional groups are coordinated to at least one metal containing complex, polymeric-metal complex salts comprising at least one polymeric material having a plurality of first-type functional groups having a charge, and at least one metal complex having an opposite charge. It further relates to devices that are made with the polymeric metal complex or the polymeric-metal complex salt.
摘要:
Positive photoresists and associated processes for microlithography in the ultraviolet (UV) and violet are disclosed. The photoresists comprise (a) a branched polymer containing protected acid groups and (b) at least one photoacid generator. The photoresists have high transparency throughout the UV, good development properties, high plasma etch resistance and other desirable properties, and are useful for microlithography in the near, far, and extreme UV, particularly at wavelengths less than or equal to 365 nm.
摘要:
Nitrile/vinyl ether-containing polymers for photoresist compositions and microlithography methods employing the photoresist compositions are described. These photoresist compositions comprise 1) at least one ethylenically unsaturated compound comprised of a vinyl ether and 2) a nitrile-containing compound, e.g., acrylonitrile, which together impart high ultraviolet (UV) transparency and developability in basic media. In some embodiments, these photoresist compositions further comprise a fluoroalcohol group. The photoresist compositions of this invention have high UV transparency, particularly at short wavelengths, e.g., 157 nm and 193 nm, which property makes them useful for lithography at these short wavelengths.