公开(公告)号：EP1048756A1

公开(公告)日：2000-11-02

申请号：EP99970132.9

申请日：1999-10-04

申请人： EBARA CORPORATION

发明人： KURIYAMA, Fumio ,  OGURE, Naoaki ,  HONGO, Akihisa

IPC分类号： C25D19/00 ,  C25D5/48 ,  C23C18/31

CPC分类号： H01L21/67161 ,  C23C18/1632 ,  C25D7/123 ,  C25D17/001 ,  H01L21/67173 ,  H01L21/6723

摘要： The present invention provides a substrate plating apparatus capable of forming a plating layer on the surface of a substrate and storing the substrate until the next process in a way that the substrate is not exposed to the atmosphere. Also, the present invention provides a substrate plating apparatus not only capable of performing a process to introduce semiconductor wafers continuously one by one into the plating apparatus without loading the wafers into cassettes, and also capable of preventing particle contamination and the formation of oxidized film on the surface of the wafers; reducing the number of processes; and reducing the installation area required for the apparatus.
A substrate plating apparatus that includes a plating process section(20) for plating a substrate; a washing process section(10) for washing the substrate after the plating process; and a storage vessel(16) containing a storing solution in which the substrate is immersed after having been plated and washed. A substrate conveyor is provided in the substrate plating apparatus for loading substrates into the substrate plating apparatus and discharging substrates out of the substrate plating apparatus, or for performing at least one of the loading or discharging operations, such that the substrates are loaded into the substrate plating apparatus one at a time, plated in the plating process section, washed in the washing process section, and subsequently discharged one at a time from the substrate plating apparatus.

摘要翻译： 本发明提供一种基板电镀装置，其能够在基板的表面上形成电镀层，并且以基板不暴露于大气的方式存储基板直到下一工序为止。 而且，本发明提供了一种基板电镀设备，不仅能够执行将半导体晶片连续一个一个地引入到电镀设备中而不将晶片装载到盒中的过程，并且还能够防止颗粒污染和在其上形成氧化膜 晶圆的表面; 减少进程的数量; 并减少设备所需的安装面积。 一种基板电镀装置，包括用于电镀基板的电镀处理部分（20） 洗涤处理部分（10），用于在电镀处理之后清洗基板; 和贮存容器（16），所述贮存容器（16）包含储存溶液，在所述储存溶液中已经电镀和洗涤之后将基板浸入其中。 衬底传送器设置在衬底电镀装置中，用于将衬底装载到衬底电镀装置中并将衬底从衬底电镀装置中排出，或用于执行装载或卸载操作中的至少一个，使得衬底装载到衬底中 电镀装置一次一个电镀在电镀处理部分中，在清洗处理部分中清洗，然后从基底电镀装置一次一个地排出电镀装置。

公开(公告)号：EP1118696A1

公开(公告)日：2001-07-25

申请号：EP99940656.4

申请日：1999-09-03

申请人： EBARA CORPORATION

发明人： NAGAI, Mizuki ,  HONGO, Akihisa ,  OHNO, Kanji ,  ISHII, Kazuo ,  KIMIZUKA, Ryoichi ,  MARUYAMA, Megumi

IPC分类号： C25D3/38

CPC分类号： C23C18/38 ,  C25D3/38 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/76877

摘要： The present invention is to provide a copper damascene plating method for efficiently filling fine wiring trenches and via holes formed in a surface of a substrate without using special machines or electrical facilities, while preventing from generation of air bubbles.
The plating method for filling trenches or via holes formed in a surface of a substrate with copper plating, comprises: performing electrolytic plating using a plating solution comprising copper sulfate (CuSO 4 ·5H 2 O) having a concentration of 4-250 g/l, sulfuric acid (H 2 SO 4 ) having a concentration of 10-200 g/l, and chlorine ions having a concentration of 0-100 mg/l. In addition, a sulfur compound additive can be mixed in to make the solution more suitable for copper damascene plating, wherein the concentration of the additive is selected based on the ratio of sulfuric acid/hydrated copper sulfate.

摘要翻译： 本发明提供一种铜镶嵌方法，用于在不使用特殊机器或电气设备的情况下有效地填充形成在基板的表面中的精细布线沟槽和通孔，同时防止产生气泡。 用于填充形成在具有铜镀层的基板的表面中的沟槽或通孔的电镀方法包括：使用包含浓度为4-250g / l的硫酸铜（CuSO 4·5H 2 O），硫酸 （H 2 SO 4），浓度为0〜100mg / l的氯离子。 此外，可以混合硫化合物添加剂以使溶液更适合于铜镶嵌电镀，其中添加剂的浓度基于硫酸/水合硫酸铜的比例来选择。

公开(公告)号：EP1091024A1

公开(公告)日：2001-04-11

申请号：EP99917206.7

申请日：1999-04-28

申请人： EBARA CORPORATION

发明人： HONGO, Akihisa ,  NAGAI, Mizuki ,  OHNO, Kanji ,  KIMIZUKA, Ryoichi ,  MARUYAMA, Megumi

IPC分类号： C25D7/12

CPC分类号： H01L21/76843 ,  C25D3/38 ,  C25D5/10 ,  C25D7/12 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877 ,  H05K3/423 ,  H05K2201/09563 ,  H05K2203/1476

摘要： A method and apparatus for plating a substrate is provided, wherein fine pits formed in the substrate, such as fine channels for wiring, are filled with a copper, copper alloy, or other material with low electrical resistance. The method is performed on a wafer W having fine pits (10) to fill the fine pits with a metal (13) and includes performing a first plating process (11) by immersing the wafer in a first plating solution having a composition superior in throwing power; and performing a second plating process (12) by immersing the substrate in a second plating solution having a composition superior in leveling ability.

摘要翻译： 提供了一种用于电镀衬底的方法和设备，其中在衬底中形成的精细凹坑，例如用于布线的精细通道，填充有铜，铜合金或具有低电阻的其他材料。 该方法在具有微细凹坑（10）的晶圆W上进行以用金属（13）填充微细凹坑，并且包括通过将晶圆浸入具有优异抛光组成的第一镀覆溶液中而执行第一镀覆工艺（11） 功率; 以及通过将所述基板浸入具有良好流平性能的组合物的第二电镀液中来执行第二电镀工艺（12）。

公开(公告)号：EP1335038A1

公开(公告)日：2003-08-13

申请号：EP01978884.3

申请日：2001-10-24

申请人： Ebara Corporation

发明人： HONGO, Akihisa ,  MISHIMA, Koji ,  INOUE, Hiroaki ,  KIMURA, Norio ,  KARIMATA, Tsutomu

IPC分类号： C23C18/16 ,  H01L21/288 ,  H01L21/768

CPC分类号： H01L21/76843 ,  C23C18/1619 ,  C23C18/1669 ,  C23C18/1678 ,  H01L21/288 ,  H01L21/76849 ,  H01L21/76874

摘要： The present invention relates to an electroless plating apparatus which can easily form a plated film having more uniform thickness on a surface, to be plate, of a material to be plated. The present invention comprises a holding portion (10) having a heating portion (14) for holding a material to be plated in such a state that a surface to be plated faces downward, and a plating bath (24) for introducing an electroless plating liquid (22) having a predetermined temperature into a plating chamber (28), and holding the electroless plating liquid while allowing the electroless plating liquid to overflow an overflow dam, wherein the material, to be plated, held by the holding portion (10) is brought into contact with the plating liquid (22) in the plating bath (24) to plate the material.

摘要翻译： 本发明涉及一种能够容易地形成待镀材料的表面上具有更均匀厚度的镀膜的镀化学镀装置。 本发明包括具有加热部分（14）的保持部分（10），该加热部分用于以被镀表面朝下的状态保持待镀材料，以及镀槽（24），用于将无电镀液 （22）中的预定温度进入电镀室（28），并且在使化学镀液体溢出溢流坝的同时夹持化学镀液体，其中由夹持部分（10）夹持的待电镀材料是 与镀浴（24）中的电镀液（22）接触以镀覆材料。

公开(公告)号：EP1029954A1

公开(公告)日：2000-08-23

申请号：EP99943206.5

申请日：1999-09-08

申请人： EBARA CORPORATION

发明人： HONGO, Akihisa ,  OGURE, Naoaki ,  UEYAMA, Hiroyuki ,  YAMAKAWA, Junitsu ,  NAGAI, Mizuki ,  SUZUKI, Kenichi ,  CHONO, Atsushi ,  SENDAI, Satoshi ,  MISHIMA, Koji

IPC分类号： C25D17/00

CPC分类号： C25D21/14 ,  C25D7/123 ,  C25D17/001 ,  C25D17/002 ,  C25D17/02

摘要： An object of the present invention is to provide a substrate plating apparatus employing an insoluble anode, and particularly a substrate plating apparatus capable of easily and automatically supplying metal ions.
It is another object of the present invention to provide a substrate plating apparatus capable of supplying a uniform primary current distribution between the cathode and anode and facilitating reduction of the size of the plating apparatus.
It is further another object of the present invention to provide a plating apparatus capable of preventing the substrate from being contaminated by particles produced from black film, even when using a soluble anode.
The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution, an insoluble anode being disposed in the plating bath opposite the substrate, the substrate plating apparatus comprising: a circulating vessel or dummy vessel provided separate from the plating bath, a soluble anode and a cathode being disposed in the circulating vessel or dummy vessel, an anion exchange film or selective cation exchange film being disposed between the anode and cathode and isolating the same; wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and generated metal ions are supplied to the plating bath.
A substrate plating apparatus comprises an ion exchange film or neutral porous diaphragm disposed between the substrate and anode in the plating bath; wherein the ion exchange film or neutral porous diaphragm divides the plating bath into a substrate region and an anode region.

公开(公告)号：EP1719161B1

公开(公告)日：2014-05-07

申请号：EP05719731.1

申请日：2005-02-23

申请人： EBARA CORPORATION

发明人： HONGO, Akihisa ,  ITO, Kenya ,  YAMAGUCHI, Kenji ,  NAKANISHI, Masayuki

IPC分类号： H01L21/304 ,  B24B37/02 ,  B24B9/06 ,  B24B21/00

CPC分类号： B24B37/02 ,  B24B9/065 ,  B24B21/002

公开(公告)号：EP1048755A1

公开(公告)日：2000-11-02

申请号：EP98961353.4

申请日：1998-12-16

申请人： Ebara Corporation

发明人： YOSHIOKA, Junichiro ,  SENDAI, Satoshi ,  CHONO, Atsushi ,  TADA, Mitsuo ,  HONGO, Akihisa ,  MUKAIYAMA, Yoshitaka ,  TOMIOKA, Kenya ,  OGATA, Akira ,  SUZUKI, Kenichi ,  OZAWA, Naomitsu

IPC分类号： C25D17/08 ,  C25D5/08 ,  C25D21/12 ,  G01R27/02

CPC分类号： G01R31/026 ,  C25D21/12

摘要： The present invention provides a conductivity sensing device capable of detecting the conductivity (contact state) of the plurality of feeder contacts contacting the conductive area of the substrate, and a plating apparatus capable of forming a plating film of uniform thickness by supplying a uniform plating current through a plurality of feeder contacts.
In the plating apparatus, an anode 13 is disposed in a plating bath; a substrate 12 is mounted in a jig and disposed in the plating bath opposite the anode 13; and a plurality of feeder contacts 15 is contacting the conductive region formed on the surface of the substrate 12. A predetermined voltage is applied between the anode 13 and feeder contacts 15 to supply a plating current through the feeder contacts 15 for plating the substrate 12. The plating apparatus also includes a conductivity sensor 22 for detecting the state of conductivity between each of the feeder contacts 15 and the conductive region on the substrate 12.

摘要翻译： 本发明提供一种电导率检测装置，其能够检测与基板的导电区域接触的多个馈电触头的导电性（接触状态），以及能够通过提供均匀电镀电流形成均匀厚度的镀膜的电镀装置 通过多个馈线接触。 在电镀装置中，阳极13设置在镀浴中; 基板12安装在夹具中并且设置在与阳极13相对的电镀槽中; 并且多个馈电触头15与形成在基板12的表面上的导电区域接触。在阳极13和馈电触头15之间施加预定电压，以通过馈电触头15提供电镀电流，以电镀基板12。 电镀装置还包括用于检测馈电触头15和基板12上的导电区域之间的导电性状态的电导率传感器22。