MICROWAVE PLASMA REACTOR
    5.
    发明公开
    MICROWAVE PLASMA REACTOR 有权
    微波等离子体反应器

    公开(公告)号:EP1915768A1

    公开(公告)日:2008-04-30

    申请号:EP06765116.6

    申请日:2006-07-27

    申请人: Edwards Limited

    IPC分类号: H01J37/32

    摘要: A method is described for treating gas exhaust from a polysilicon etch process, which uses a plasma abatement device to treat the gas. The device comprises a stainless steel gas chamber having a gas inlet for receiving the gas and a gas outlet. As the gas may contain a halocompound and water vapor, the chamber is heated to a temperature that inhibits adsorption of water on the surface within the chamber, thereby inhibiting corrosion of the gas chamber. The gas is then conveyed to the gas chamber for treatment, and the temperature of the chamber is maintained above said temperature during treatment of the gas.