公开(公告)号：EP2553721A2

公开(公告)日：2013-02-06

申请号：EP11763451.9

申请日：2011-03-31

申请人： Electro Scientific Industries, Inc.

发明人： OSAKO, Yasu ,  CHO, Bong ,  FINN, Daragh ,  HOOPER, Andrew ,  O'BRIEN, James

IPC分类号： H01L21/78 ,  H01L21/301

CPC分类号： B23K26/364 ,  B23K26/0608 ,  B23K26/40 ,  B23K2203/172 ,  B23K2203/50 ,  H01L21/67092

摘要： Laser singulation of electronic devices 12 from semiconductor substrates including wafers 180 is performed using up to 3 lasers 150, 160, 170 from 2 wavelength ranges. Using up to 3 lasers 150, 160, 170 from 2 wavelength ranges permits laser singulation of wafers 180 held by die attach film 184 while avoiding problems caused by single-wavelength dicing. In particular, using up to 3 lasers 150, 160, 170 from 2 wavelength ranges permits efficient dicing of semiconductor wafers 180 while avoiding debris and thermal problems associated with laser processing die attach tape 184.

公开(公告)号：EP2553717A2

公开(公告)日：2013-02-06

申请号：EP11763453.5

申请日：2011-03-31

申请人： Electro Scientific Industries, Inc.

发明人： OSAKO, Yasu ,  FINN, Daragh

IPC分类号： H01L21/301 ,  H01L21/78

CPC分类号： H01L21/78 ,  B23K26/0006 ,  B23K26/0626 ,  B23K26/38 ,  B23K26/40 ,  B23K2103/50 ,  B23K2103/56

摘要： An improved method for singulation of electronic substrates into dice uses a laser to first form cuts in the substrate and then chamfers the edges of the cuts by altering the laser parameters. The chamfers increase die break strength by reducing the residual damage and removes debris caused by the initial laser cut without requiring additional process steps, additional equipment or consumable supplies.

公开(公告)号：EP2553717B1

公开(公告)日：2020-05-06

申请号：EP11763453.5

申请日：2011-03-31

申请人： Electro Scientific Industries, Inc.

发明人： OSAKO, Yasu ,  FINN, Daragh

IPC分类号： H01L21/301 ,  H01L21/78 ,  B23K26/38 ,  B23K26/06 ,  B23K26/40 ,  B23K26/00 ,  B23K103/00

公开(公告)号：EP2691982A2

公开(公告)日：2014-02-05

申请号：EP12765003.4

申请日：2012-03-23

申请人： Electro Scientific Industries, Inc.

发明人： HOOPER, Andrew ,  BARSIC, David ,  BRULAND, Kelly J. ,  FINN, Daragh S. ,  SHEEHAN, Lynn ,  PENG, Xiaoyuan ,  OSAKO, Yasu ,  DUMESTRE, Jim ,  JORDENS, William J.

IPC分类号： H01L21/78 ,  H01L21/301

CPC分类号： H01S3/102 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/389 ,  B23K26/40 ,  B23K26/705 ,  B23K2203/172 ,  B23K2203/50 ,  H01L21/6836 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01055 ,  H01L2924/01056 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/12043 ,  H01L2924/13091 ,  H01L2924/14 ,  H01S3/0057 ,  H01S3/1305 ,  H01L2924/00 ,  H01L2924/3512

摘要： Tailored laser pulse shapes are used for processing workpieces. Laser dicing of semiconductor device wafers on die-attach film (DAF), for example, may use different tailored laser pulse shapes for scribing device layers down to a semiconductor substrate, dicing the semiconductor substrate, cutting the underlying DAF, and/or post processing of the upper die edges to increase die break strength. Different mono-shape laser pulse trains may be used for respective recipe steps or passes of a laser beam over a scribe line. In another embodiment, scribing a semiconductor device wafer includes only a single pass of a laser beam along a scribe line using a mixed-shape laser pulse train that includes at least two laser pulses that are different than one another. In addition, or in other embodiments, one or more tailored pulse shapes may be selected and provided to the workpiece on-the-fly. The selection may be based on sensor feedback.

摘要翻译： 经剪裁激光脉冲的形状用于加工工件。 上模片连接电影（DAF），例如，可以使用用于刻划器件层下降到一个半导体衬底，切割所述半导体衬底，切割底层DAF不同剪裁激光脉冲的形状，和/或后处理的半导体器件晶片的激光切割 的上边缘，以增加断裂强度。 不同单形激光脉冲序列可以用于respectivement配方步骤或通过划线的激光束的通过。 在另一个实施方式刻划半导体器件晶片仅包括沿着使用混合形激光脉冲串的划线的激光束的单次通过并包括至少两个激光脉冲并比彼此不同。 此外，或在其它实施例中，一个或多个经剪裁脉冲形状可能被选择，并提供给上即时工件。 该选择可以基于传感器反馈。