公开(公告)号：EP0959541A3

公开(公告)日：2000-11-29

申请号：EP99109970.6

申请日：1999-05-20

申请人： Fuji Photo Film Co., Ltd.

发明人： Hayakawa, Toshiro, c/o Fuji Photo Film Co.,Ltd. ,  Fukunaga, Toshiaki, c/o Fuji Photo Film Co.,Ltd. ,  Wada, Mitsugu, c/o Fuji Photo Film Co.,Ltd.

IPC分类号： H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/22 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/32333 ,  H01S5/3407 ,  H01S5/343 ,  H01S5/3434 ,  H01S5/3436

摘要： A semiconductor laser has an active region which includes at least a quantum well layer and upper and lower optical waveguide layers and is of In x Ga 1-x As y P 1-y (0≦x≦1, 0≦y≦1). Upper and lower AlGaAs cladding layers are formed on opposite sides of the active region. At least one of the optical waveguide layers is not smaller than 0.25µm in thickness, and a part of the upper cladding layer on the upper optical waveguide layer is selectively removed up to the interface of the upper cladding layer and the upper optical waveguide layer.