公开(公告)号：EP2117040A1

公开(公告)日：2009-11-11

申请号：EP07715024.1

申请日：2007-02-27

Applicant: Fujitsu Limited

Inventor： KIKKAWA, Toshihide

IPC: H01L21/338 ,  H01L29/778 ,  H01L29/80 ,  H01L29/812

CPC classification number: H01L29/7783 ,  H01L29/0649 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7788

Abstract: A vertical type GaN series field effect transistor having excellent pinch-off characteristics is provided. A compound semiconductor device includes a conductive semiconductor substrate, a drain electrode formed on a bottom surface of the conductive semiconductor substrate, a current blocking layer formed on a top surface of the conductive semiconductor substrate, made of high resistance compound semiconductor or insulator, and having openings, an active layer of compound semiconductor burying the openings and extending on an upper surface of the current blocking layer, a gate electrode formed above the openings and above the active layer, and a source electrode formed laterally spaced from the gate electrode and formed above the active layer.

Abstract translation: 提供了具有优良夹断特性的垂直型GaN系列场效应晶体管。 一种化合物半导体器件，包括导电半导体衬底，在导电半导体衬底的底表面上形成的漏电极，在导电半导体衬底的顶表面上形成的电流阻挡层，由高电阻化合物半导体或绝缘体制成，并且具有 开口，掩埋开口并在电流阻挡层的上表面上延伸的化合物半导体的有源层，形成在开口上方并且在有源层上方的栅电极以及与栅电极横向间隔开地形成并形成在上方的源电极 活动层。

公开(公告)号：EP2518771B1

公开(公告)日：2017-08-23

申请号：EP09852524.9

申请日：2009-12-21

Applicant: Fujitsu Limited

Inventor： MINOURA, Yuichi ,  KIKKAWA, Toshihide

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/12

CPC classification number: H01L29/7802 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66712

Abstract: A compound semiconductor device is provided with a first nitride semiconductor layer (1) of a first conductivity type, a second nitride semiconductor layer (5) of the first conductivity type which is formed over the first nitride semiconductor layer (1) and being in contact with the first nitride semiconductor layer (1), a third nitride semiconductor layer (4) of a second conductivity type being in contact with the second nitride semiconductor layer (5), a fourth nitride semiconductor layer (3) of the first conductivity type being in contact with the third nitride semiconductor layer (4), and an insulating film (2) insulating the first nitride semiconductor layer (1) and the fourth nitride semiconductor layer (3) from each other. A source electrode (8) is positioned inside an outer edge of the insulating film (2) in planar view.

Abstract translation: 化合物半导体器件设置有第一导电类型的第一氮化物半导体层（1），形成在第一氮化物半导体层（1）上方且与第一导电类型的第一导电类型的第二导电类型的第二氮化物半导体层（5）接触 与第一氮化物半导体层（1），第二导电类型的第三氮化物半导体层（4）与第二氮化物半导体层（5）接触，第一导电类型的第四氮化物半导体层（3） 与第三氮化物半导体层（4）接触;以及将第一氮化物半导体层（1）和第四氮化物半导体层（3）彼此绝缘的绝缘膜（2）。 源电极（8）在俯视时位于绝缘膜（2）的外缘的内侧。

公开(公告)号：EP2117040B1

公开(公告)日：2018-05-16

申请号：EP07715024.1

申请日：2007-02-27

Applicant: Fujitsu Limited

Inventor： KIKKAWA, Toshihide

IPC: H01L21/338 ,  H01L29/778 ,  H01L29/80 ,  H01L29/812

CPC classification number: H01L29/7783 ,  H01L29/0649 ,  H01L29/1029 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7788

Abstract: A vertical type GaN series field effect transistor having excellent pinch-off characteristics is provided. A compound semiconductor device includes a conductive semiconductor substrate, a drain electrode formed on a bottom surface of the conductive semiconductor substrate, a current blocking layer formed on a top surface of the conductive semiconductor substrate, made of high resistance compound semiconductor or insulator, and having openings, an active layer of compound semiconductor burying the openings and extending on an upper surface of the current blocking layer, a gate electrode formed above the openings and above the active layer, and a source electrode formed laterally spaced from the gate electrode and formed above the active layer.

公开(公告)号：EP2518771A1

公开(公告)日：2012-10-31

申请号：EP09852524.9

申请日：2009-12-21

Applicant: Fujitsu Limited

Inventor： MINOURA, Yuichi ,  KIKKAWA, Toshihide

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/12

CPC classification number: H01L29/7802 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/2003 ,  H01L29/267 ,  H01L29/66712

Abstract: A compound semiconductor device is provided with a first nitride semiconductor layer (1) of a first conductivity type, a second nitride semiconductor layer (5) of the first conductivity type which is formed over the first nitride semiconductor layer (1) and being in contact with the first nitride semiconductor layer (1), a third nitride semiconductor layer (4) of a second conductivity type being in contact with the second nitride semiconductor layer (5), a fourth nitride semiconductor layer (3) of the first conductivity type being in contact with the third nitride semiconductor layer (4), and an insulating film (2) insulating the first nitride semiconductor layer (1) and the fourth nitride semiconductor layer (3) from each other. A source electrode (8) is positioned inside an outer edge of the insulating film (2) in planar view.

Abstract translation: 化合物半导体器件设置有第一导电类型的第一氮化物半导体层（1），形成在第一氮化物半导体层（1）上并且接触的第一导电类型的第二氮化物半导体层（5） 与第一氮化物半导体层（1）接触的第二导电类型的第三氮化物半导体层（4）与第二氮化物半导体层（5）接触，第一导电类型的第四氮化物半导体层（3） 与第三氮化物半导体层（4）接触的绝缘膜（2）和将第一氮化物半导体层（1）和第四氮化物半导体层（3）彼此绝缘的绝缘膜（2）。 在平面图中，源电极（8）位于绝缘膜（2）的外边缘的内侧。