公开(公告)号：EP1596233A4

公开(公告)日：2007-05-23

申请号：EP04712756

申请日：2004-02-19

Applicant: HAMAMATSU PHOTONICS KK

Inventor： HOSHINO YASUJI ,  IIDA TAKASHI ,  WARASHINA YOSHIHISA ,  TABATA KEI

IPC: G02B6/42 ,  H01L31/02 ,  H01L31/0232 ,  H01L33/58 ,  H01L33/60 ,  H01S5/026

CPC classification number: G02B6/423 ,  G02B6/4201 ,  G02B6/4214 ,  G02B6/4243 ,  G02B6/4249 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00

公开(公告)号：EP2403011A4

公开(公告)日：2013-03-20

申请号：EP10746105

申请日：2010-02-15

Applicant: HAMAMATSU PHOTONICS KK

Inventor： SAKAMOTO AKIRA ,  IIDA TAKASHI ,  YAMAMOTO KOEI ,  YAMAMURA KAZUHISA ,  NAGANO TERUMASA

IPC: H01L31/10 ,  H01L31/0236

CPC classification number: H01L31/02366 ,  H01L27/1446 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Prepared is an n - type semiconductor substrate 1 having a first principal surface 1a and a second principal surface 1b opposed to each other, and having a p + type semiconductor region 3 formed on the first principal surface 1a side. At least a region opposed to the p + type semiconductor region 3 in the second principal surface 1a of the n - type semiconductor substrate 1 is irradiated with a pulsed laser beam to form an irregular asperity 10. After formation of the irregular asperity 10, an accumulation layer 11 with an impurity concentration higher than that of the n - type semiconductor substrate 1 is formed on the second principal surface 1a side of the n - type semiconductor substrate 1. After formation of the accumulation layer 11, the n - type semiconductor substrate 1 is subjected to a thermal treatment.

公开(公告)号：EP2072978A4

公开(公告)日：2014-01-08

申请号：EP08765177

申请日：2008-06-05

Applicant: HAMAMATSU PHOTONICS KK

Inventor： SUZUKI TOMOFUMI ,  SHIBAYAMA KATSUMI ,  IIDA TAKASHI ,  YOKINO TAKAFUMI ,  ITO MASASHI ,  TEICHMANN HELMUT ,  HILLER DIETMAR ,  STARKER ULRICH

IPC: G01J3/02 ,  G01J3/04 ,  G01J3/14 ,  G01J3/28

CPC classification number: G01J3/14 ,  G01J3/02 ,  G01J3/0256