公开(公告)号：EP1083600A2

公开(公告)日：2001-03-14

申请号：EP00124369.0

申请日：1995-07-27

申请人： Hitachi, Ltd.

发明人： Tanei, Hirayoshi ,  Iwanaga, Shoichi ,  Okamoto, Masahide ,  Nakamura, Masato ,  Morita, Kousaku ,  Ishihara, Shousaku ,  Kobayashi, Fumiyuki ,  Tagami, Fumikazu ,  Sengoku, Norio ,  Fujita, Tsuyoshi

IPC分类号： H01L23/15

CPC分类号： C03C14/004 ,  C03C3/089 ,  C03C8/16 ,  C03C17/06 ,  C03C2217/253 ,  H01L21/4807 ,  H01L23/15 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/15312 ,  H01L2924/15787 ,  H05K1/0306 ,  H05K3/4629 ,  Y10S428/901

摘要： The present invention provides ceramic circuit substrate which is sintered at 900 to 1,050°C and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing the same.
A glass is employed as row material, of which softening point is 850 to 1,100°C, that is, a glass having a composition included in an area in Fig. 1 (triangular composition diagram of SiO 2 -B 2 O 3 -R 2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively.

摘要翻译： 本发明提供陶瓷电路基板，该陶瓷电路基板在900〜1050℃下烧结，相对介电常数低，与硅相当的热膨胀系数和高的弯曲强度，及其制造方法。 使用玻璃作为行材料，其软化点为850〜1100℃，即具有图1中的区域中的组成的玻璃。 图1（SiO 2 -B 2 O 3 -R 2 O的三角形组成图，组成由小圆的位置表示，小圆数表示组成数），用连接表示第一，第三，第十，第十一， 和第四组合物。

公开(公告)号：EP0697725A2

公开(公告)日：1996-02-21

申请号：EP95111855.3

申请日：1995-07-27

申请人： HITACHI, LTD.

发明人： Tanei, Hirayoshi ,  Iwanaga, Shoichi ,  Okamoto, Masahide ,  Nakamura, Masato ,  Morita, Kousaku ,  Ishihara, Shousaku ,  Kobayashi, Fumiyuki ,  Tagami, Fumikazu ,  Sengoku, Norio ,  Fujita, Tsuyoshi

IPC分类号： H01L23/15

CPC分类号： C03C14/004 ,  C03C3/089 ,  C03C8/16 ,  C03C17/06 ,  C03C2217/253 ,  H01L21/4807 ,  H01L23/15 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/15312 ,  H01L2924/15787 ,  H05K1/0306 ,  H05K3/4629 ,  Y10S428/901

摘要： The present invention provides ceramic circuit substrate which is sintered at 900 to 1,050°C and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing the same.
A glass is employed as row material, of which softening point is 850 to 1,100°C, that is, a glass having a composition included in an area in Fig. 1 (triangular composition diagram of SiO₂-B₂O₃-R₂O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively.

摘要翻译： 本发明提供陶瓷电路基板，该陶瓷电路基板在900〜1050℃下烧结，相对介电常数低，与硅相当的热膨胀系数和高的弯曲强度，及其制造方法。 使用玻璃作为行材料，其软化点为850〜1100℃，即具有图1中的区域的组成的玻璃。 图1（SiO 2 -B 2 O 3 -R 2 O的三角形组成图，组成由小圆的位置表示，小圆圈中的数字表示组成数），用连接表示第一，第三，第十，第十一， 和第四组合物。 $$

公开(公告)号：EP1083600B1

公开(公告)日：2007-02-14

申请号：EP00124369.0

申请日：1995-07-27

申请人： Hitachi, Ltd.

发明人： Tanei, Hirayoshi ,  Iwanaga, Shoichi ,  Okamoto, Masahide ,  Nakamura, Masato ,  Morita, Kousaku ,  Ishihara, Shousaku ,  Kobayashi, Fumiyuki ,  Tagami, Fumikazu ,  Sengoku, Norio ,  Fujita, Tsuyoshi

IPC分类号： H01L23/15

CPC分类号： C03C14/004 ,  C03C3/089 ,  C03C8/16 ,  C03C17/06 ,  C03C2217/253 ,  H01L21/4807 ,  H01L23/15 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/15312 ,  H01L2924/15787 ,  H05K1/0306 ,  H05K3/4629 ,  Y10S428/901

公开(公告)号：EP1083600A3

公开(公告)日：2005-05-25

申请号：EP00124369.0

申请日：1995-07-27

申请人： Hitachi, Ltd.

发明人： Tanei, Hirayoshi ,  Iwanaga, Shoichi ,  Okamoto, Masahide ,  Nakamura, Masato ,  Morita, Kousaku ,  Ishihara, Shousaku ,  Kobayashi, Fumiyuki ,  Tagami, Fumikazu ,  Sengoku, Norio ,  Fujita, Tsuyoshi

IPC分类号： H01L23/15

CPC分类号： C03C14/004 ,  C03C3/089 ,  C03C8/16 ,  C03C17/06 ,  C03C2217/253 ,  H01L21/4807 ,  H01L23/15 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/15312 ,  H01L2924/15787 ,  H05K1/0306 ,  H05K3/4629 ,  Y10S428/901

摘要： The present invention provides ceramic circuit substrate which is sintered at 900 to 1,050°C and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing the same. A glass is employed as row material, of which softening point is 850 to 1,100°C, that is, a glass having a composition included in an area in Fig. 1 (triangular composition diagram of SiO 2 -B 2 O 3 -R 2 O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively.

公开(公告)号：EP0697725B1

公开(公告)日：2002-11-20

申请号：EP95111855.3

申请日：1995-07-27

申请人： Hitachi, Ltd.

发明人： Tanei, Hirayoshi ,  Iwanaga, Shoichi ,  Okamoto, Masahide ,  Nakamura, Masato ,  Morita, Kousaku ,  Ishihara, Shousaku ,  Kobayashi, Fumiyuki ,  Tagami, Fumikazu ,  Sengoku, Norio ,  Fujita, Tsuyoshi

IPC分类号： H01L23/15

CPC分类号： C03C14/004 ,  C03C3/089 ,  C03C8/16 ,  C03C17/06 ,  C03C2217/253 ,  H01L21/4807 ,  H01L23/15 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/15312 ,  H01L2924/15787 ,  H05K1/0306 ,  H05K3/4629 ,  Y10S428/901

公开(公告)号：EP0697725A3

公开(公告)日：1997-02-19

申请号：EP95111855.3

申请日：1995-07-27

申请人： HITACHI, LTD.

发明人： Tanei, Hirayoshi ,  Iwanaga, Shoichi ,  Okamoto, Masahide ,  Nakamura, Masato ,  Morita, Kousaku ,  Ishihara, Shousaku ,  Kobayashi, Fumiyuki ,  Tagami, Fumikazu ,  Sengoku, Norio ,  Fujita, Tsuyoshi

IPC分类号： H01L23/15

CPC分类号： C03C14/004 ,  C03C3/089 ,  C03C8/16 ,  C03C17/06 ,  C03C2217/253 ,  H01L21/4807 ,  H01L23/15 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/09701 ,  H01L2924/15312 ,  H01L2924/15787 ,  H05K1/0306 ,  H05K3/4629 ,  Y10S428/901

摘要： The present invention provides ceramic circuit substrate which is sintered at 900 to 1,050°C and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing the same. A glass is employed as row material, of which softening point is 850 to 1,100°C, that is, a glass having a composition included in an area in Fig. 1 (triangular composition diagram of SiO₂-B₂O₃-R₂O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively.