摘要:
Known methods for operating a device for modifying a substrate by irradiating with infrared radiation, comprising an irradiating unit in which multiple cylindrical infrared emitters with longitudinal axes arranged parallel to one another are grouped together, comprise the method steps of: (a) specifying the total radiation output in dependence on the modification of the substrate to be achieved, (b) operating the infrared emitters with a respective desired operating output. In order on this basis to provide an efficient operating method which makes it possible for the device to be easily and quickly converted to a new operating mode and at the same time makes it possible for the device to be operated easily and at low cost, it is provided according to the invention that (c) a desired radiation spectrum is specified in dependence on the modification of the substrate to be achieved, and that (d) the respective desired operating outputs of the infrared emitters are individually chosen such that, when they are added, the desired radiation spectrum and the total radiation output are obtained, (e) with the proviso that the infrared emitters are of an identical construction and that the total radiation output deviates by a maximum of 15% from a specified desired value.
摘要:
Known devices for drying and sintering metal-containing ink on a substrate have a plurality of optical radiators for irradiating the substrate and a reflector for reflecting radiation onto the substrate. In said known devices, the radiators and the substrate can be moved in relation to each other in a transport direction. In order to specify an efficient device for drying and sintering metal-containing ink on the basis of said known devices, which device enables homogeneous irradiation of the substrate, has a compact construction, and also is simple and economical to produce, the optical radiators according to the invention are infrared radiators having a cylindrical radiator tube and a radiator-tube longitudinal axis, which emit radiation having a radiation component of IR-B radiation of at least 30% and a radiation component of IR-C radiation of at least 5% of the total radiator power. Said infrared radiators are arranged in a radiator module in such a way that the radiator-tube longitudinal axes of the radiators extend parallel to each other and transversely to the transport direction and irradiate an irradiation field on the surface of the substrate in such a way that the irradiation field is divided into a drying zone and a sintering zone arranged downstream of the drying zone as viewed in the transport direction, wherein the drying zone is exposed along a centre axis extending in the transport direction to an at least 15% lower average irradiation density than the sintering zone.
摘要:
Known irradiation devices (1) for irradiating plants (3) have a carrier element (2) for cultivating the plants, said carrier element defining a cultivation plane (E), a plurality of radiation sources (4a, 4b, 4c) for irradiating the plants with visible and/or ultraviolet radiation (5) and a plurality of infrared emitters (8) for irradiating the plants with infrared radiation (6). In order, proceeding therefrom, to specify an irradiation device for irradiating plants which ensures uniform irradiation of the plants with infrared radiation alongside irradiation of the plants with ultraviolet and/or visible radiation, and which furthermore requires a small number of infrared emitters relative to the cultivation area, the invention proposes that the infrared emitters are designed for a temperature of 800°C to 1800°C and each have a cylindrical emitter tube (303) having an emitter tube length in the range of 50 mm to 500 mm, and that the emitter tubes extend parallel to one another in an emitter zone (Z) located above the cultivation plane (E), wherein the infrared emitter occupation density relative to the area of the cultivation plane is in the range of between 0.2 m -2 and 1.0 m -2 , and irradiation regions of adjacent infrared emitters on the cultivation plane overlap in such a way that the average irradiance on the cultivation plane is between 10 watt/m 2 and 100 watt/m 2 with a variation range of a maximum of 50%, and that a reflector (302) facing a structural space (B) is assigned to a top side of the emitter tube.