公开(公告)号：EP0147776B1

公开(公告)日：1991-05-15

申请号：EP84115736.5

申请日：1984-12-18

申请人： HITACHI, LTD.

发明人： Yatsuo, Tsutomu ,  Nagano, Takahiro ,  Oikawa, Saburo ,  Sato, Yukimasa ,  Kimura, Shin ,  Fukui, Hirochi

IPC分类号： H01L29/60 ,  H01L29/10 ,  H01L29/08 ,  H01L29/74 ,  H01L29/72

CPC分类号： H01L29/744 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/1004 ,  H01L29/102 ,  H01L29/167 ,  H01L29/32 ,  H01L29/42304 ,  H01L29/42308

公开(公告)号：EP0533439A2

公开(公告)日：1993-03-24

申请号：EP92308395.0

申请日：1992-09-15

申请人： HITACHI, LTD.

发明人： Murakami, Susumu ,  Sato, Yukimasa ,  Narita, Hiroshi

IPC分类号： H01L29/90 ,  H01L21/329 ,  H01L29/743 ,  H01L27/06 ,  H02M1/00

CPC分类号： H01L29/66106 ,  H01L29/66371 ,  H01L29/861

摘要： A constant-voltage diode has a first semiconductor region (14) of a first conductivity type, an adjoining semiconductor region (15) of a second conductivity type, a third semiconductor region (16) of the second conductivity type adjoining the second semiconductor region, and a fourth semiconductor region (17) of the first conductivity type partially surrounded by the second semiconductor region (15). At low reverse biases between a cathode electrode (2) and an anode electrode (3), the behavior of the device is determined by the pn junction (J₁) between the first and second semiconductor regions (14,15). As the reverse biasing increases, the depletion layers of that junction (J₁) will reach the fourth semiconductor region (17), but the reverse bias at this time is insufficient to break down that junction (J₁). Increase of reverse bias causes break down of the pn junction (J₃) between the third and fourth semiconductor regions (16,17). This effect is achieved by suitable impurity concentrations in the semiconductor regions (14,15,16,17). A plurality of fourth semiconductor regions (17) may be provided and a bidirectional structure can be obtained by providing a polarity reversed structure with the first semiconductor region (14) in common.

摘要翻译： 恒压二极管具有第一导电类型的第一半导体区域（14），在第二导电型的邻接的半导体区域（15），第二导电类型邻接第二半导体区域的第三半导体区域（16）， 和第一导电类型的第四半导体区域（17）由所述第二半导体区（15）部分包围。 在阴极电极之间的低反向偏置（2）和所述阳极电极（3），该装置的行为是确定性的由第一和第二半导体区域（14,15）之间的pn结（J1）开采。 为反向偏置增加，耗尽层那样结（J1）将达到所述第四半导体区域（17），但此时的反向偏压不足以分解确实结（J1）。 反向偏置的增加导致在第三和第四半导体区域（16,17）之间的pn结（J3）的击穿。 这种效果是通过在半导体区域（14,15,16,17），其适合的杂质浓度下达到。 可以提供第四半导体区域（17）中的多个和双向结构可以通过提供极性反转结构由共同的第一半导体区域（14）来获得。

公开(公告)号：EP0147776A2

公开(公告)日：1985-07-10

申请号：EP84115736.5

申请日：1984-12-18

申请人： HITACHI, LTD.

发明人： Yatsuo, Tsutomu ,  Nagano, Takahiro ,  Oikawa, Saburo ,  Sato, Yukimasa ,  Kimura, Shin ,  Fukui, Hirochi

IPC分类号： H01L29/60 ,  H01L29/10 ,  H01L29/08 ,  H01L29/74 ,  H01L29/72

CPC分类号： H01L29/744 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/1004 ,  H01L29/102 ,  H01L29/167 ,  H01L29/32 ,  H01L29/42304 ,  H01L29/42308

摘要： A gate turn-off thyristor and a transistor are disclosed, each of which comprises: a semiconductor substrate (1,101) including at least three semiconductor layers between a pair of principal surfaces, adjacent ones of the semiconductor layers being different in conductivity type from each other, a first one of the semiconductor layers being formed of at least one strip-shaped region (20, 120) with a constant width, a second one (30, 130) of the semiconductor layers being exposed to a first principal surface of the semiconductor substrate together with the strip-shaped region; a first main electrode (2.102) kept in ohmic contact with the strip-shaped region at the first principal surface; a first control electrode (3a, 103a) kept in ohmic contact with the second semiconductor layer (30, 130) on one side of the strip-shaped region in the direction of the width thereof and connected directly to a control terminal (6, 106); a second control electrode (3b, 103b) kept in ohmic contact with the second semiconductor layer on the other side of the strip-shaped region in the direction of the width thereof and connected to the control terminal through the first control electrode and the resistance (R) of the second semiconductor layer between the first control electrode and the second control electrode; a second main electrode (4. 104) kept in ohmic contact with a second principal surface of the semiconductor substrate; and means provided in the semiconductor substrate for accelerating the spatial biasing of a conductive region to the other side of the strip-shaped region in the direction of the width thereof when a current flowing across the semiconductor substrate is cut off, thereby enlarging the area of safety operation.

公开(公告)号：EP0533439B1

公开(公告)日：1999-12-01

申请号：EP92308395.0

申请日：1992-09-15

申请人： Hitachi, Ltd.

发明人： Murakami, Susumu ,  Sato, Yukimasa ,  Narita, Hiroshi

IPC分类号： H01L29/87 ,  H01L21/329 ,  H01L29/747 ,  H01L27/06 ,  H02M1/00

CPC分类号： H01L29/66106 ,  H01L29/66371 ,  H01L29/861

公开(公告)号：EP0391337B1

公开(公告)日：1998-11-18

申请号：EP90106348.7

申请日：1990-04-03

申请人： Hitachi, Ltd.

发明人： Odai, Shingo ,  Sakurada, Shuroku ,  Ozeki, Toshiyuki ,  Sato, Yukimasa ,  Yatsuo, Tsutomu ,  Shimizu, Yoshiteru ,  Sanpei, Isamu ,  Yagishita, Kenji

IPC分类号： H01L29/744 ,  H01L29/08

CPC分类号： H01L29/0834 ,  H01L29/744

公开(公告)号：EP0533439A3

公开(公告)日：1994-07-27

申请号：EP92308395.0

申请日：1992-09-15

申请人： HITACHI, LTD.

发明人： Murakami, Susumu ,  Sato, Yukimasa ,  Narita, Hiroshi

IPC分类号： H01L29/90 ,  H01L21/329 ,  H01L29/743 ,  H01L27/06 ,  H02M1/00

CPC分类号： H01L29/66106 ,  H01L29/66371 ,  H01L29/861

摘要： A constant-voltage diode has a first semiconductor region (14) of a first conductivity type, an adjoining semiconductor region (15) of a second conductivity type, a third semiconductor region (16) of the second conductivity type adjoining the second semiconductor region, and a fourth semiconductor region (17) of the first conductivity type partially surrounded by the second semiconductor region (15). At low reverse biases between a cathode electrode (2) and an anode electrode (3), the behavior of the device is determined by the pn junction (J₁) between the first and second semiconductor regions (14,15). As the reverse biasing increases, the depletion layers of that junction (J₁) will reach the fourth semiconductor region (17), but the reverse bias at this time is insufficient to break down that junction (J₁). Increase of reverse bias causes break down of the pn junction (J₃) between the third and fourth semiconductor regions (16,17). This effect is achieved by suitable impurity concentrations in the semiconductor regions (14,15,16,17). A plurality of fourth semiconductor regions (17) may be provided and a bidirectional structure can be obtained by providing a polarity reversed structure with the first semiconductor region (14) in common.

摘要翻译： 恒压二极管具有第一导电类型的第一半导体区域（14），第二导电类型的邻接半导体区域（15），与第二半导体区域邻接的第二导电类型的第三半导体区域（16） 以及由第二半导体区域（15）部分地包围的第一导电类型的第四半导体区域（17）。 在阴极电极（2）和阳极电极（3）之间的低反向偏压下，器件的行为由第一和第二半导体区域（14,15）之间的pn结（J1）确定。 当反向偏置增加时，该结（J1）的耗尽层将到达第四半导体区（17），但此时的反向偏压不足以破坏该结（J1）。 反向偏置的增加导致第三和第四半导体区域（16,17）之间的pn结（J3）的分解。 这种效应通过在半导体区域（14,15,16,17）中合适的杂质浓度来实现。 可以提供多个第四半导体区域（17），并且通过与第一半导体区域（14）共同设置极性反转结构，可以获得双向结构。

公开(公告)号：EP0391337A3

公开(公告)日：1991-04-24

申请号：EP90106348.7

申请日：1990-04-03

申请人： HITACHI, LTD.

发明人： Odai, Shingo ,  Sakurada, Shuroku ,  Ozeki, Toshiyuki ,  Sato, Yukimasa ,  Yatsuo, Tsutomu ,  Shimizu, Yoshiteru ,  Sanpei, Isamu ,  Yagishita, Kenji

IPC分类号： H01L29/74 ,  H01L29/08

CPC分类号： H01L29/0834 ,  H01L29/744

摘要： A gate turn-off thyristor provided with a disc-shaped semiconductor substrate consisting of at least 4 layers of pnpn forming pn junctions between different layers adjacent to each other, in which the emitter layer (16) on the cathode side is divided into a plurality of elongated regions arranged in the radial direction and disposed in a plurality of rings, in which the base layer (14) on the anode side is formed so as to be connected partially with the anode electrode (2) disposed on the emitter layer on the anode side by a short-circuiting layer having the same conductivity type as the base layer and the short-circuiting layer described above has a coaxial circular pattern, characterized in that the short-circuiting layer described above is formed at least within the part, where the regions between different rings of the emitter layer on the cathode side are projected on the anode side.

公开(公告)号：EP0391337A2

公开(公告)日：1990-10-10

申请号：EP90106348.7

申请日：1990-04-03

申请人： HITACHI, LTD.

发明人： Odai, Shingo ,  Sakurada, Shuroku ,  Ozeki, Toshiyuki ,  Sato, Yukimasa ,  Yatsuo, Tsutomu ,  Shimizu, Yoshiteru ,  Sanpei, Isamu ,  Yagishita, Kenji

IPC分类号： H01L29/74 ,  H01L29/08

CPC分类号： H01L29/0834 ,  H01L29/744

摘要： A gate turn-off thyristor provided with a disc-shaped semiconductor substrate consisting of at least 4 layers of pnpn forming pn junctions between different layers adjacent to each other, in which the emitter layer (16) on the cathode side is divided into a plurality of elongated regions arranged in the radial direction and disposed in a plurality of rings, in which the base layer (14) on the anode side is formed so as to be connected partially with the anode electrode (2) disposed on the emitter layer on the anode side by a short-circuiting layer having the same conductivity type as the base layer and the short-circuiting layer described above has a coaxial circular pattern, characterized in that the short-circuiting layer described above is formed at least within the part, where the regions between different rings of the emitter layer on the cathode side are projected on the anode side.

摘要翻译： 一种栅极截止晶闸管，其设置有由至少4层pnpn组成的盘状半导体衬底，所述pnpn形成彼此相邻的不同层之间的pn结，其中阴极侧的发射极层（16）被分成多个 在多个环中布置的细长区域，其中阳极侧的基底层（14）形成为与设置在发射极层上的阳极电极（2）部分连接， 通过具有与基底层相同的导电类型的短路层和上述短路层的阳极侧具有同轴的圆形图案，其特征在于，上述短路层至少形成在该部分内，其中 阴极侧的发射极层的不同环之间的区域突出在阳极侧。

公开(公告)号：EP0147776A3

公开(公告)日：1987-08-26

申请号：EP84115736

申请日：1984-12-18

申请人： HITACHI, LTD.

发明人： Yatsuo, Tsutomu ,  Nagano, Takahiro ,  Oikawa, Saburo ,  Sato, Yukimasa ,  Kimura, Shin ,  Fukui, Hirochi

IPC分类号： H01L29/60 ,  H01L29/10 ,  H01L29/08 ,  H01L29/74 ,  H01L29/72

CPC分类号： H01L29/744 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/1004 ,  H01L29/102 ,  H01L29/167 ,  H01L29/32 ,  H01L29/42304 ,  H01L29/42308

摘要： A gate turn-off thyristor and a transistor are disclosed, each of which comprises: a semiconductor substrate (1,101) including at least three semiconductor layers between a pair of principal surfaces, adjacent ones of the semiconductor layers being different in conductivity type from each other, a first one of the semiconductor layers being formed of at least one strip-shaped region (20, 120) with a constant width, a second one (30, 130) of the semiconductor layers being exposed to a first principal surface of the semiconductor substrate together with the strip-shaped region; a first main electrode (2.102) kept in ohmic contact with the strip-shaped region at the first principal surface; a first control electrode (3a, 103a) kept in ohmic contact with the second semiconductor layer (30, 130) on one side of the strip-shaped region in the direction of the width thereof and connected directly to a control terminal (6, 106); a second control electrode (3b, 103b) kept in ohmic contact with the second semiconductor layer on the other side of the strip-shaped region in the direction of the width thereof and connected to the control terminal through the first control electrode and the resistance (R) of the second semiconductor layer between the first control electrode and the second control electrode; a second main electrode (4. 104) kept in ohmic contact with a second principal surface of the semiconductor substrate; and means provided in the semiconductor substrate for accelerating the spatial biasing of a conductive region to the other side of the strip-shaped region in the direction of the width thereof when a current flowing across the semiconductor substrate is cut off, thereby enlarging the area of safety operation.