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    Bipolar semiconductor devices
    2.
    发明公开
    Bipolar semiconductor devices 失效
    双极半导体器件

    公开(公告)号：EP0673072A3

    公开(公告)日：1995-11-08

    申请号：EP95301625.0

    申请日：1995-03-13

    申请人： HITACHI, LTD. ,  HITACHI HARAMACHI ELECTRONICS CO., LTD.

    发明人： Arakawa, Hidetoshi ,  Sugawara, Yoshitaka ,  Inaba, Masamitsu

    IPC分类号： H01L29/735 ,  H01L29/739 ,  H01L29/74

    CPC分类号： H01L29/7317 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7436

    摘要： In a lateral type p-n-p transistor, n-type semiconductor base substance and n-type base region is connected through a high resistance. Due to the high resistance, since an affect in a conjunction capacity between p-type collector (23) and n-type semiconductor base (11) substance can be lessen, a cutoff frequency in the lateral type p-n-p transistor can be heighten. Thereby, a high frequency in a high breakdown voltage lateral type semiconductor device can be improved. The contact condition is avoided by separating the interval between a high concentration of n-base region (11) having a high impurity concentration and a high concentration of p-collector region (23) having a low impurity concentration. Without the lowing in a breakdown voltage, the concentration of the p-collector region (23) having the low impurity concentration can be heighten, thereby a collector resistance can be made small. At the transistor operation time, the voltage between the emitter (21) and the base (11) can be lowered, a current capacity can be improved.

    摘要翻译： 在横型p-n-p晶体管中，n型半导体基体与n型基极区通过高电阻连接。 由于高电阻，因为可以减小p型集电极（23）与n型半导体基极（11）物质之间的结合电容的影响，所以可以提高横向型p-n-p晶体管的截止频率。 由此，可以提高高耐压横向型半导体装置的高频率。 通过分离具有高杂质浓度的高浓度n基区（11）和具有低杂质浓度的高浓度p集电极区（23）之间的间隔来避免接触状况。 如果不降低击穿电压，则可以提高杂质浓度低的p集电极区域（23）的浓度，可以使集电极电阻变小。 在晶体管工作时间，发射极（21）和基极（11）之间的电压可以降低，电流容量可以提高。

    Bipolar semiconductor devices
    3.
    发明公开
    Bipolar semiconductor devices 失效
    Bipolare Halbleiteranordnungen。

    公开(公告)号：EP0673072A2

    公开(公告)日：1995-09-20

    申请号：EP95301625.0

    申请日：1995-03-13

    申请人： HITACHI, LTD. ,  HITACHI HARAMACHI ELECTRONICS CO., LTD.

    发明人： Arakawa, Hidetoshi ,  Sugawara, Yoshitaka ,  Inaba, Masamitsu

    IPC分类号： H01L29/735 ,  H01L29/739 ,  H01L29/74

    CPC分类号： H01L29/7317 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7436

    摘要： In a lateral type p-n-p transistor, n-type semiconductor base substance and n-type base region is connected through a high resistance. Due to the high resistance, since an affect in a conjunction capacity between p-type collector (23) and n-type semiconductor base (11) substance can be lessen, a cutoff frequency in the lateral type p-n-p transistor can be heighten. Thereby, a high frequency in a high breakdown voltage lateral type semiconductor device can be improved. The contact condition is avoided by separating the interval between a high concentration of n-base region (11) having a high impurity concentration and a high concentration of p-collector region (23) having a low impurity concentration. Without the lowing in a breakdown voltage, the concentration of the p-collector region (23) having the low impurity concentration can be heighten, thereby a collector resistance can be made small. At the transistor operation time, the voltage between the emitter (21) and the base (11) can be lowered, a current capacity can be improved.

    摘要翻译： 在横型p-n-p型晶体管中，n型半导体基体和n型基极区通过高电阻连接。 由于高电阻，由于可以减小p型集电极（23）与n型半导体基板（11）物质的结合能力的影响，所以可以提高横向型p-n-p型晶体管的截止频率。 由此，能够提高高耐压侧向半导体装置的高频。 通过分离高浓度的杂质浓度高的n碱性区域（11）和杂质浓度低的p型集电极区域（23）的高浓度之间的间隔来避免接触条件。 在没有击穿电压降低的情况下，可以提高具有低杂质浓度的p集电极区域（23）的浓度，从而可以减小集电极电阻。 在晶体管工作时，可以降低发射极（21）与基极（11）之间的电压，能够提高电流容量。