公开(公告)号：EP1479103A4

公开(公告)日：2005-02-09

申请号：EP03731957

申请日：2003-01-16

申请人： IBM

发明人： BEDELL STEPHEN W ,  CHU JACK O ,  FOGEL KEITH E ,  KOESTER STEPHEN J ,  SADANA DEVENDRA K ,  OTT JOHN ALBRECHT

IPC分类号： H01L27/08 ,  H01L21/02 ,  H01L21/20 ,  H01L21/225 ,  H01L21/324 ,  H01L21/337 ,  H01L21/762 ,  H01L27/12 ,  H01L29/786 ,  H01L21/331

CPC分类号： H01L21/76243 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02612 ,  H01L21/2251 ,  H01L21/324 ,  H01L27/1203 ,  H01L29/66916 ,  Y10S438/938 ,  Y10T428/12674 ,  Y10T428/265 ,  Y10T428/31848

摘要： A method of forming a thin, high-quality relaxed SiGe-on-insulator substrate (10) material is provided which first includes forming a SiGe or pure Ge layer on a surface of a first single crystal Si layer (14) which is present atop a barrier layer (12) that is resistant to the diffusion of Ge. Optionally forming a Si cap layer (18) over the SiGe or pure Ge layer (16), and thereafter heating the various layers at a temperature which permits interdiffusion of Ge throughtout the first single crystal Si layer (14), the optional Si cap (18) and the SiGe or pure Ge layer (16) thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer (12). Additional SiGe regrowth and/or formation of a strained epi-Si layer may follow the above steps. SiGe-on-insulator substrate materials as well as structures including at least the SiGe-on-insulator substrate material are also disclosed herein.

摘要翻译： 提供了一种形成薄的，高品质的弛豫SiGe绝缘体上的基板材料的方法，其首先包括形成第一单晶Si层的表面上的SiGe或纯Ge层，其存在的顶上即耐阻挡层 到Ge的扩散。 OPTIONALLY形成在SiGe或纯Ge层中的Si间隙层，并随后在其允许的Ge的相互扩散在整个第一单晶Si层的温度下加热的各种层，任选的Si盖和SiGe或纯Ge层，从而形成 基本松弛，单晶SiGe层在阻挡层上。 额外的SiGe再生长和/或形成的应变外延Si层的可遵循上述步骤。 上SiGe绝缘体基板材料以及包含结构至少在SiGe绝缘体上的基板材料，因此是在盘游离缺失。