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    6F2 NON-VOLATILE MEMORY BITCELL
    1.
    发明公开
    6F2 NON-VOLATILE MEMORY BITCELL 有权

    公开(公告)号：EP3123474A4

    公开(公告)日：2017-11-29

    申请号：EP14887120

    申请日：2014-03-28

    申请人： INTEL CORP

    发明人： WANG YIH

    IPC分类号： G11C11/16 ,  G03F1/36 ,  H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

    CPC分类号： H01L43/02 ,  G03F1/36 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： An apparatus including an array of memory cells arranged in a grid defined by word lines and bit lines in a generally orthogonal orientation relative to one another, a memory cell including a resistive memory component and an access transistor, wherein the access transistor includes a diffusion region disposed at an acute angle relative to an associated word line. A method including etching a substrate to form a plurality of fins each including a body having a length dimension including a plurality of first junction regions and a plurality of second junction regions that are generally parallel to one another and offset by angled channel regions displacing in the length dimension an end of a first junction region from the beginning of a second junction region; removing the spacer material; and introducing a gate electrode on the channel region of each of the plurality of fins.