公开(公告)号：EP3314653A1

公开(公告)日：2018-05-02

申请号：EP15896511.1

申请日：2015-06-23

申请人： INTEL Corporation

发明人： KARPOV, Elijah V. (Ilya) ,  KAVALIEROS, Jack T. ,  CHAU, Robert S. ,  MUKHERJEE, Niloy ,  MAJHI, Prashant ,  LE, Van H. ,  PILLARISETTY, Ravi ,  SHAH, Uday ,  DEWEY, Gilbert ,  RADOSAVLJEVIC, Marko ,  RIOS, Rafael

IPC分类号： H01L27/108

CPC分类号： H01L27/108 ,  G11C13/0007 ,  H01L27/11551 ,  H01L27/1156 ,  H01L27/2436 ,  H01L27/2472 ,  H01L29/7869 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L45/148 ,  H01L45/1625 ,  H01L45/1633

摘要： A thin film transistor is deposited over a portion of a metal layer over a substrate. A memory element is coupled to the thin film transistor to provide a first memory cell. A second memory cell is over the first memory. A logic block is coupled to at least the first memory cell.