公开(公告)号：EP2777069A4

公开(公告)日：2015-01-14

申请号：EP12847303

申请日：2012-11-08

申请人： INTEVAC INC ,  PEDERSON TERRY ,  HIESLMAIR HENRY ,  CHUN MOON ,  PRABHAKAR VINAY ,  ADIBI BABAK ,  BLUCK TERRY

发明人： PEDERSON TERRY ,  HIESLMAIR HENRY ,  CHUN MOON ,  PRABHAKAR VINAY ,  ADIBI BABAK ,  BLUCK TERRY

IPC分类号： H01L21/677 ,  H01L21/68 ,  H01L21/683 ,  H01L31/18

CPC分类号： H01L21/6833 ,  H01L21/26506 ,  H01L21/67745 ,  H01L21/6776 ,  H01L21/681 ,  H01L21/6831 ,  H01L31/1876 ,  H02N13/00 ,  Y02E10/50 ,  Y02P70/521

摘要： A system for processing substrates has a vacuum enclosure and a processing chamber situated to process wafers in a processing zone inside the vacuum enclosure. Two rail assemblies are provided, one on each side of the processing zone. Two chuck arrays ride, each on one of the rail assemblies, such that each is cantilevered on one rail assemblies and support a plurality of chucks. The rail assemblies are coupled to an elevation mechanism that places the rails in upper position for processing and at lower position for returning the chuck assemblies for loading new wafers. A pickup head assembly loads wafers from a conveyor onto the chuck assemblies. The pickup head has plurality of electrostatic chucks that pick up the wafers from the front side of the wafers. Cooling channels in the processing chucks are used to create air cushion to assist in aligning the wafers when delivered by the pickup head.

公开(公告)号：EP2641266A4

公开(公告)日：2014-08-27

申请号：EP11841747

申请日：2011-11-17

申请人： INTEVAC INC

发明人： CHUN MOON ,  ADIBI BABAK

IPC分类号： H01L21/20 ,  H01L21/223 ,  H01L21/324 ,  H01L31/18

CPC分类号： H01L31/1864 ,  H01L21/2236 ,  H01L21/324 ,  H01L31/068 ,  H01L31/1804 ,  H01L31/1872 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2446458A4

公开(公告)日：2015-07-22

申请号：EP10797606

申请日：2010-06-23

申请人： INTEVAC INC

发明人： ADIBI BABAK ,  CHUN MOON

IPC分类号： C23C14/04 ,  C23C14/48 ,  H01J37/18 ,  H01J37/317 ,  H01J37/32 ,  H01L21/223 ,  H01L31/18

CPC分类号： H01L31/1876 ,  C23C14/042 ,  C23C14/48 ,  H01J37/185 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/0437 ,  H01J2237/184 ,  H01J2237/201 ,  H01J2237/327 ,  H01J2237/3365 ,  H01L21/2236 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of ion implantation comprising: providing a plasma within a plasma region of a chamber; positively biasing a first grid plate, wherein the first grid plate comprises a plurality of apertures; negatively biasing a second grid plate, wherein the second grid plate comprises a plurality of apertures; flowing ions from the plasma in the plasma region through the apertures in the positively-biased first grid plate; flowing at least a portion of the ions that flowed through the apertures in the positively-biased first grid plate through the apertures in the negatively-biased second grid plate; and implanting a substrate with at least a portion of the ions that flowed through the apertures in the negatively-biased second grid plate.

摘要翻译： 一种离子注入的方法，包括：在室的等离子体区域内提供等离子体; 使第一格栅板向正偏置，其中第一格板包括多个孔; 负偏置第二格栅板，其中所述第二格板包括多个孔; 使来自等离子体区域中的等离子体的离子通过正偏压的第一格栅板中的孔流动; 使流经所述正偏置的第一格栅板中的孔的至少一部分离子流过负偏置的第二格栅板中的孔; 以及用至少部分离子注入衬底，所述离子流过所述负偏压的第二栅格板中的所述孔。

公开(公告)号：EP2534674A4

公开(公告)日：2014-05-28

申请号：EP11742754

申请日：2011-02-09

申请人： INTEVAC INC

发明人： CHUN MOON ,  ADIBI BABAK

IPC分类号： H01L21/426 ,  G03F1/20 ,  H01J37/317 ,  H01L21/266

CPC分类号： H01J37/3171 ,  G03F1/20 ,  H01J2237/31711 ,  H01L21/266