公开(公告)号：EP3655562A1

公开(公告)日：2020-05-27

申请号：EP18835589.5

申请日：2018-07-19

申请人： Intevac, Inc.

发明人： BLUCK, Terry ,  BLONIGAN, Wendell Thomas

IPC分类号： C23C14/06 ,  C23C14/08 ,  C23C14/10 ,  C23C14/24 ,  C23C14/34 ,  C23C14/56

公开(公告)号：EP1907159B1

公开(公告)日：2018-08-22

申请号：EP06788144.1

申请日：2006-07-21

申请人： INTEVAC, INC.

发明人： COSTELLO, Kenneth, A.

IPC分类号： H01J31/26 ,  H01L27/146 ,  H01L23/24 ,  H01L23/22 ,  B23K1/00 ,  H01L21/60 ,  H01L31/00 ,  B23K101/40

CPC分类号： B23K1/0016 ,  B23K2101/40 ,  H01J31/26 ,  H01L24/81 ,  H01L27/14618 ,  H01L27/14683 ,  H01L2224/05008 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05644 ,  H01L2224/13109 ,  H01L2224/16 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12043 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15312 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/00014

摘要： Bonding and interconnect techniques including a spacer for use with semiconductor die for the creation of thermally efficient, physically compliant Ultra High Vacuum Tubes and the tube resulting therefrom.

公开(公告)号：EP3188215A3

公开(公告)日：2017-09-13

申请号：EP16163887.9

申请日：2011-02-09

申请人： Intevac, Inc.

发明人： CHUN, Moon ,  ADIBI, Babak

IPC分类号： H01L21/426 ,  H01J37/317 ,  H01L21/266 ,  G03F1/20

CPC分类号： H01J37/3171 ,  G03F1/20 ,  H01J2237/31711 ,  H01L21/266

摘要： An adjustable shadow mask implantation system comprising:
an ion source configured to provides ions; and an shadow mask assembly configured to selectively allow ions from the ion source to pass there through to a substrate where they are implanted, wherein the shadow mask assembly is configured to adjust between a first position and a second position,
wherein the shadow mask assembly enables ion implantation of multiple substantially parallel lines absent any lines with an intersecting orientation with respect to the multiple substantially parallel lines when set in the first position, and wherein the shadow mask assembly enables ion implantation of multiple substantially parallel lines and a line with an intersecting orientation with respect to the multiple substantially parallel lines when set in the second position.

摘要翻译： 一种可调节荫罩植入系统，包括：配置成提供离子的离子源; 以及荫罩组件，所述荫罩组件被配置为选择性地允许来自所述离子源的离子通过所述离子源到达它们被植入的基板，其中所述荫罩组件被配置为在第一位置和第二位置之间调节，其中所述荫罩组件能够 在设置于所述第一位置时，不存在具有相对于所述多条基本上平行的线的交叉取向的任何线的多条基本上平行的线的离子注入，并且其中所述阴影掩模组件能够离子注入多条基本上平行的线和具有交叉方向的线 相对于当设置在第二位置时的多条基本上平行的线。

公开(公告)号：EP3108027A4

公开(公告)日：2017-08-30

申请号：EP15752108

申请日：2015-02-19

申请人： INTEVAC INC

发明人： BROWN DAVID WARD ,  BLUCK TERRY

IPC分类号： C23C14/00 ,  C23C14/35 ,  C23C14/54 ,  G11B5/851 ,  H01F41/18 ,  H01J37/34

CPC分类号： H01J37/3455 ,  C23C14/35 ,  C23C14/56 ,  G11B5/851 ,  H01F41/183 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3417 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/3452 ,  H01J37/347

公开(公告)号：EP3108028A4

公开(公告)日：2017-08-23

申请号：EP15752686

申请日：2015-02-19

申请人： INTEVAC INC

发明人： SHAH VINAY ,  RIPOSAN ALEXANDRU ,  BLUCK TERRY

IPC分类号： C23C14/00 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC分类号： C23C14/35 ,  C23C14/352 ,  C23C14/542 ,  C23C14/562 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/345 ,  H01J37/3455 ,  H01J37/347

摘要： A system for depositing material from a target onto substrates, comprising a processing chamber; a sputtering target having length L and having sputtering material provided on front surface thereof; a magnet operable to reciprocally scan across the length L in close proximity to rear surface of the target; and a counterweight operable to reciprocally scan at same speed but opposite direction of the magnet.

摘要翻译： 一种用于将来自目标的材料沉积到衬底上的系统，包括处理室; 具有长度L并且在其前表面上设置有溅射材料的溅射靶; 磁体，其可操作以在接近靶的后表面的整个长度L上往复扫描; 以及可操作成以相同的速度但相反方向对磁体进行往复扫描的配重。

公开(公告)号：EP1745506B1

公开(公告)日：2016-07-13

申请号：EP05742093.7

申请日：2005-05-02

申请人： INTEVAC, INC.

发明人： COSTELLO, Kenneth, A. ,  RODERICK, Kevin, J.

IPC分类号： H01L21/60 ,  H01J31/26

CPC分类号： H01J31/26 ,  H01L24/81 ,  H01L2224/05008 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/13109 ,  H01L2224/16 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15312 ,  H01L2924/00 ,  H01L2924/00014

公开(公告)号：EP2489757A3

公开(公告)日：2016-01-06

申请号：EP12164231.8

申请日：2010-06-23

申请人： Intevac, Inc.

发明人： Chun, Moon ,  Adibi, Babak

IPC分类号： C23C14/04 ,  C23C14/48 ,  H01J37/32 ,  H01L21/223 ,  H01L31/18 ,  H01J37/18 ,  H01J37/317

CPC分类号： H01L31/1876 ,  C23C14/042 ,  C23C14/48 ,  H01J37/185 ,  H01J37/3171 ,  H01J37/32412 ,  H01J37/32422 ,  H01J2237/0437 ,  H01J2237/184 ,  H01J2237/201 ,  H01J2237/327 ,  H01J2237/3365 ,  H01L21/2236 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of ion implantation comprising: providing a plasma within a plasma region of a chamber; positively biasing a first grid plate, wherein the first grid plate comprises a plurality of apertures; negatively biasing a second grid plate, wherein the second grid plate comprises a plurality of apertures; flowing ions from the plasma in the plasma region through the apertures in the positively-biased first grid plate; flowing at least a portion of the ions that flowed through the apertures in the positively-biased first grid plate through the apertures in the negatively-biased second grid plate; and implanting a substrate with at least a portion of the ions that flowed through the apertures in the negatively-biased second grid plate.

公开(公告)号：EP2841619A4

公开(公告)日：2015-06-03

申请号：EP13781653

申请日：2013-04-26

申请人： INTEVAC INC

发明人： BLUCK TERRY ,  RIPOSAN ALEX

IPC分类号： C23C14/35 ,  H01J37/32 ,  H01J37/34

CPC分类号： H01J37/3423 ,  C23C14/3407 ,  C23C14/352 ,  C23C14/56 ,  C23C14/566 ,  H01J37/32779 ,  H01J37/3408 ,  H01J37/3411 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/3497

摘要： A narrow sputtering source and target which are designed to be installed in a series on a sputtering chamber. Each of the narrow sputtering source has length sufficient to traverse one direction of the sputtering zone, but is much narrower than the orthogonal direction of the sputtering zone. When the sputtering chamber performs a pass-by sputtering process, each of the narrow sputtering sources is sufficiently long to traverse the sputtering zone in the direction orthogonal to the substrate travel direction, but is much narrower than the sputtering zone in the direction of substrate travel. Several narrow sputtering sources are installed so as to traverse the entire sputtering zone in all directions.

公开(公告)号：EP2773792A4

公开(公告)日：2015-04-22

申请号：EP12866275

申请日：2012-11-02

申请人： INTEVAC INC ,  BROWN DAVID WARD ,  SHAH VINAY ,  PEDERSON TERRY ,  BLUCK TERRY

发明人： BROWN DAVID WARD ,  SHAH VINAY ,  PEDERSON TERRY ,  BLUCK TERRY

IPC分类号： C23C14/35

CPC分类号： H01J37/3455 ,  C23C14/35 ,  C23C14/56 ,  H01J37/32779 ,  H01J37/32899 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3452

公开(公告)号：EP2839052A1

公开(公告)日：2015-02-25

申请号：EP13777473.3

申请日：2013-04-19

申请人： Intevac, Inc. ,  Bluck, Terry ,  Latchford, Ian ,  Shah, Vinay ,  Riposan, Alex

发明人： BLUCK, Terry ,  LATCHFORD, Ian ,  SHAH, Vinay ,  RIPOSAN, Alex

IPC分类号： C23C14/04

CPC分类号： H01L31/1892 ,  C23C14/042 ,  C23C14/50 ,  C23C16/042 ,  C23C16/4585 ,  H01L21/6734 ,  H01L21/67346 ,  H01L31/18

摘要： An arrangement for supporting substrates during processing, having a wafer carrier with a susceptor for supporting the substrate and confining the substrate to predetermined position. An inner mask is configured for placing on top of the substrate, the inner mask having an opening pattern to mask unprocessed parts of the substrate, but expose remaining parts of the substrate for processing. An outer mask is configured for placing on top of the inner mask, the outer mask having an opening that exposes the part of the inner mask having the opening pattern, but cover the periphery of the inner mask.