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    ELEKTRONISCHE SCHALTUNG, SENSORANORDNUNG UND VERFAHREN ZUM VERARBEITEN EINES SENSORSIGNALS
    2.
    发明公开
    ELEKTRONISCHE SCHALTUNG, SENSORANORDNUNG UND VERFAHREN ZUM VERARBEITEN EINES SENSORSIGNALS 有权
    电子电路，用于处理信号传感器传感器装置及方法

    公开(公告)号：EP1328799A1

    公开(公告)日：2003-07-23

    申请号：EP01987879.2

    申请日：2001-10-16

    申请人： Infineon Technologies AG

    发明人： FREY, Alexander ,  PAULUS, Christian ,  THEWES, Roland

    IPC分类号： G01N27/49 ,  G01D3/02

    CPC分类号： G01D3/02 ,  G01N27/3277

    摘要： In a first phase a first sensor signal, essentially comprising the current offset signal of the sensor, is applied to the input of an electronic circuit. The first sensor signal is fed to a first signal path and stored therein. In a second phase a second sensor signal, comprising the current offset signal and a time-dependent measured signal, is applied to the input and the stored first sensor signal is fed to the input by means of the first signal path, such that essentially the time dependent measured signal is fed by means of a second signal path coupled to the input.

    BIOSENORCHIP
    3.
    发明公开
    BIOSENORCHIP 审中-公开

    公开(公告)号：EP1272850A2

    公开(公告)日：2003-01-08

    申请号：EP01927637.7

    申请日：2001-03-29

    申请人： Infineon Technologies AG

    发明人： FREY, Alexander ,  THEWES, Roland

    IPC分类号： G01N33/543 ,  C12Q1/68

    CPC分类号： G01N33/5438 ,  G01N27/3277

    摘要： The invention relates to a biosensor chip that is provided with a first electrode and a second electrode. The first electrode is provided with a holding area for holding probe molecules which can bind macromolecular biopolymers. The invention also relates to an integrated electric differentiating circuit by means of which an electric current can be detected and can be differentiated according to time, whereby said current is generated during a reduction/oxidation recycling procedure.

    摘要翻译： 本发明涉及一种具有第一电极和第二电极的生物传感器芯片。 第一电极具有用于保持可结合大分子生物聚合物的探针分子的保持区域。 本发明还涉及一种集成的差分电路，通过该集成的差分电路可以检测电流并且可以根据时间来区分电流，由此在还原/氧化再循环过程期间产生所述电流。

    SCHREIB-LESEVERSTÄRKER FÜR EINE DRAM-SPEICHERZELLE SOWIE DRAM-SPEICHER
    5.
    发明公开
    SCHREIB-LESEVERSTÄRKER FÜR EINE DRAM-SPEICHERZELLE SOWIE DRAM-SPEICHER 有权
    写读放大器DRAM存储单元和DRAM内存

    公开(公告)号：EP1181691A1

    公开(公告)日：2002-02-27

    申请号：EP01921181.2

    申请日：2001-03-13

    申请人： Infineon Technologies AG

    发明人： FREY, Alexander

    IPC分类号： G11C7/06 ,  G11C11/4091

    CPC分类号： G11C11/4091 ,  G11C7/065

    摘要： A DRAM memory (10) is disclosed, comprising a number of DRAM memory cells (15), which each form one, or several memory cell fields (11). Each memory cell (15) is connected to a bitline (12), or a reference bitline (13). The individual bitlines (12, 13) are connected to a read-write amplifier (30). According to the invention, in order that the read-write amplifier (30) can achieve the desired performance with high speed and reliability of performance, with the lowest possible space requirement, a space-saving read amplifier arrangement is provided, whereby the read-write amplifier (30) comprises a first read-write amplifier element (4) and a second read-write amplifier element (50), separate from the first, with the individual amplifier components (41, 42, 43, 51, 54) distributed on both read-write amplifier elements (40, 50). Several bitline pairs (16) can thus be simultaneously evaluated in a single memory cell field (11) with an individual read-write amplifier.

    SCHALTKREIS-ANORDNUNG, ELEKTROCHEMISCHER SENSOR, SENSOR-ANORDNUNG UND VERFAHREN ZUM VERARBEITEN EINES ÜBER EINE SENSOR-ELEKTRODE BEREITGESTELLTEN STROMSIGNALS
    7.
    发明公开
    SCHALTKREIS-ANORDNUNG, ELEKTROCHEMISCHER SENSOR, SENSOR-ANORDNUNG UND VERFAHREN ZUM VERARBEITEN EINES ÜBER EINE SENSOR-ELEKTRODE BEREITGESTELLTEN STROMSIGNALS 有权
    电路布置的电化学传感器，用于加工通过传感器电极传感器系统和方法提供的功率信号

    公开(公告)号：EP1472548A2

    公开(公告)日：2004-11-03

    申请号：EP03704224.9

    申请日：2003-01-17

    申请人： Infineon Technologies AG

    发明人： FREY, Alexander ,  PAULUS, Christian ,  SCHIENLE, Meinrad ,  THEWES, Roland

    IPC分类号： G01R19/12

    CPC分类号： G01N27/3276

    摘要： The invention relates to a switching circuit system, an electrochemical sensor, a sensor system, and a method for processing a current signal made available via a sensor electrode. The inventive switching circuit system comprises a sensor electrode, a first circuit unit that is electrically coupled to the sensor electrode, and a second circuit unit which is provided with a first capacitor. The first circuit unit is arranged in such a way that it maintains the electric potential of the sensor electrode within a predefined first reference range at a predefined electric set point potential by coupling the first capacitor to the sensor electrode such that the electric potential can be adjusted. The second circuit unit is arranged in such a way that it detects any deviation of the electric potential of the first capacitor from a second reference range and brings the first capacitor to a first electric reference potential.

    METHOD OF MANUFACTURING A BONDED SUBSTRATE STACK
    9.
    发明公开
    METHOD OF MANUFACTURING A BONDED SUBSTRATE STACK 审中-公开

    公开(公告)号：EP3993021A1

    公开(公告)日：2022-05-04

    申请号：EP20205462.3

    申请日：2020-11-03

    申请人： Infineon Technologies AG

    发明人： SIGL, Alfred ,  FREY, Alexander

    IPC分类号： H01L23/00 ,  H01L21/768

    摘要： A method of manufacturing a bonded substrate stack is described. The method comprises providing a first substrate having a first hybrid interface layer, the first hybrid interface layer comprising a first insulator and a first metal. The method further comprises providing a second substrate having a second hybrid interface layer, the second hybrid interface layer comprising a second insulator and a second metal. The first hybrid interface layer and the second hybrid interface layer are surface-activated by particle bombardment. The particle bombardment is configured to remove atoms of the first hybrid interface layer and atoms of the second hybrid interface layer to generate dangling bonds on the first hybrid interface layer and on the second hybrid interface layer. The surface-activated first hybrid interface layer and the surface-activated second hybrid interface layer are brought into contact, thereby causing the dangling bonds of the first hybrid interface layer and the dangling bonds of the second hybrid interface layer to bond together to form the first insulator to second insulator bonds and the first metal to second metal bonds.