公开(公告)号：EP1279188B1

公开(公告)日：2006-09-06

申请号：EP01935012.3

申请日：2001-05-02

申请人： Infineon Technologies AG ,  International Business Machines Corporation

发明人： WANG, Yun-Yu ,  JAMMY, Rajarao ,  KIMBALL, Lee, J. ,  KOTECKI, David, E. ,  LIAN, Jenny ,  LIN, Chenting ,  MILLER, John, A. ,  NAGEL, Nicolas ,  SHEN, Hua ,  WILDMAN, Horatio, S.

IPC分类号： H01L21/02

CPC分类号： H01L28/75 ,  H01L28/55 ,  H01L28/60

摘要： A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second electrode portion is provided.

公开(公告)号：EP1279188A1

公开(公告)日：2003-01-29

申请号：EP01935012.3

申请日：2001-05-02

申请人： Infineon Technologies North America Corp. ,  International Business Machines Corporation

发明人： WANG, Yun-Yu ,  JAMMY, Rajarao ,  KIMBALL, Lee, J. ,  KOTECKI, David, E. ,  LIAN, Jenny ,  LIN, Chenting ,  MILLER, John, A. ,  NAGEL, Nicholas ,  SHEN, Hua ,  WILDMAN, Horatio, S.

IPC分类号： H01L21/02

CPC分类号： H01L28/75 ,  H01L28/55 ,  H01L28/60

摘要： A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second electrode portion is provided.